Current-driven writing process in antiferromagnetic Mn2Au for memory applications.

Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of ≈20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Néel spin-orbit torque acting on the domain walls.

Control of structure and spin texture in the van der Waals layered magnet CrSBr.

Controlling magnetism at nanometer length scales is essential for realizing high-performance spintronic, magneto-electric and topological devices and creating on-demand spin Hamiltonians probing fundamental concepts in physics. Van der Waals (vdW)-bonded layered magnets offer exceptional opportunities for such spin texture engineering. Here, we demonstrate nanoscale structural control in the layered magnet CrSBr with the potential to create spin patterns without the environmental sensitivity that has hindered such manipulations in other vdW magnets. We drive a local phase transformation using an electron beam that moves atoms and exchanges bond directions, effectively creating regions that have vertical vdW layers embedded within the initial horizontally vdW bonded exfoliated flakes. We calculate that the newly formed two-dimensional structure is ferromagnetically ordered in-plane with an energy gap in the visible spectrum, and weak antiferromagnetism between the planes, suggesting possibilities for creating spin textures and quantum magnetic phases.

A transmission electron microscopy study of low-strain epitaxial BaTiO3grown onto NdScO3.

Ferroelectric materials exhibit a strong coupling between strain and electrical polarization. In epitaxial thin films, the strain induced by the substrate can be used to tune the domain structure. Substrates of rare-earth scandates are sometimes selected for the growth of ferroelectric oxides because of their close lattice match, which allows the growth of low-strain dislocation-free layers. Transmission electron microscopy (TEM) is a frequently used technique for investigating ferroelectric domains at the nanometer-scale. However, it requires to thin the specimen down to electron transparency, which can modify the strain and the electrostatic boundary conditions. Here, we have investigated a 320 nm thick epitaxial layer of BaTiO3grown onto an orthorhombic substrate of NdScO3with interfacial lattice strains of -0.45% and -0.05% along the two in-plane directions. We show that the domain structure of the layer can be significantly altered by TEM sample preparation depending on the orientation and the geometry of the lamella. In the as-grown state, the sample shows an anisotropica/cferroelastic domain pattern in the direction of largest strain. If a TEM lamella is cut perpendicular to this direction so that strain is released, a new domain pattern is obtained, which consists of bundles of thin horizontal stripes parallel to the interfaces. These stripe domains correspond to a sheared crystalline structure (orthorhombic or monoclinic) with inclined polarization vectors and with at least four variants of polarization. The stripe domains are distributed in triangular-shaped 180° domains where the average polarization is parallel to the growth direction. The influence of external electric fields on this domain structure was investigated usingin situbiasing and dark-field imaging in TEM.

Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloy.

In antiferromagnetic spintronics, the read-out of the staggered magnetization or Néel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Néel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-established read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are only slightly diminished. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn2Au Néel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling.

Off-axis electron holography of Néel-type skyrmions in multilayers of heavy metals and ferromagnets.

Magnetic skyrmions are complex swirling spin structures that are of interest for applications in energy-efficient memories and logic technologies. Multilayers of heavy metals and ferromagnets have been shown to host magnetic skyrmions at room temperature. Lorentz transmission electron microscopy is often used to study magnetic domain structures in multilayer samples using mainly Fresnel defocus imaging. Here, off-axis electron holography is used to obtain in-focus electron optical phase images of Néel-type domains and skyrmions in an Ir/Fe/Co/Pt multilayer sample. The preparation of the sample, reconstruction of the holograms and influence of sample tilt angle on the signal-to-noise ratio in the phase images are discussed. A good agreement is found between images of individual skyrmions that are stabilized using an external magnetic field and simulated images based on theoretical models of Néel-type skyrmions.

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (AlxGa1-x)0.5In0.5P-GaAs diodes with 4 layers of tensile-strained InyGa1-yP quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.

Local deformation gradients in epitaxial Pb(Zr0.2Ti0.8)O3 layers investigated by transmission electron microscopy.

Lead zirconate titanate samples are used for their piezoelectric and ferroelectric properties in various types of micro-devices. Epitaxial layers of tetragonal perovskites have a tendency to relax by forming [Formula: see text] ferroelastic domains. The accommodation of the a/c/a/c polydomain structure on a flat substrate leads to nanoscale deformation gradients which locally influence the polarization by flexoelectric effect. Here, we investigated the deformation fields in epitaxial layers of Pb(Zr0.2Ti0.8)O3 grown on SrTiO3 substrates using transmission electron microscopy (TEM). We found that the deformation gradients depend on the domain walls inclination ([Formula: see text] or [Formula: see text] to the substrate interface) of the successive [Formula: see text] domains and we describe three different a/c/a domain configurations: one configuration with parallel a-domains and two configurations with perpendicular a-domains (V-shaped and hat-[Formula: see text]-shaped). In the parallel configuration, the c-domains contain horizontal and vertical gradients of out-of-plane deformation. In the V-shaped and hat-[Formula: see text]-shaped configurations, the c-domains exhibit a bending deformation field with vertical gradients of in-plane deformation. Each of these configurations is expected to have a different influence on the polarization and so the local properties of the film. The deformation gradients were measured using dark-field electron holography, a TEM technique, which offers a good sensitivity (0.1%) and a large field-of-view (hundreds of nanometers). The measurements are compared with finite element simulations.

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode.

Dark-field electron holography (DFEH) is a powerful transmission electron microscopy technique for mapping strain with nanometer resolution and high precision. However the technique can be difficult to set up if some practical steps are not respected. In this article, several measurements were performed on thin Si(1-x)Gex layers using (004) DFEH in Lorentz mode. Different practical aspects are discussed such as sample preparation, reconstruction of the holograms and interpretation of the strain maps in terms of sensitivity and accuracy. It was shown that the measurements are not significantly dependent on the preparation tool. Good results can be obtained using both FIB and mechanical polishing. Usually the most important aspect is a precise control of the thickness of the sample. A problem when reconstructing (004) dark-field holograms is the relatively high phase gradient that characterises the strained regions. It can be difficult to perform reconstructions with high sensitivity in both strained and unstrained regions. Here we introduce simple methods to minimise the noise in the different regions using a specific mask shape in Fourier space or by combining several reconstructions. As a test, DFEH was applied to the characterization of eight Si(1-x)Gex samples with different Ge concentrations. The sensitivity of the strain measured in the layers varies between 0.08% and 0.03% for spatial resolutions of 3.5-7 nm. The results were also compared to finite element mechanical simulations. A good accuracy of ±0.1% between experiment and simulation was obtained for strains up to 1.5% and ±0.25% for strains up to 2.5%.