Supercontinuum generation in angle-etched diamond waveguides.

We experimentally demonstrate on-chip supercontinuum generation in the visible region in angle-etched diamond waveguides. We measure an output spectrum spanning 670-920 nm in a 5-mm-long waveguide using 100-fs pulses with 187 pJ of incident pulse energy. Our fabrication technique, combined with diamond's broad transparency window, offers a potential route toward broadband supercontinuum generation in the UV domain.

Coherent two-octave-spanning supercontinuum generation in lithium-niobate waveguides.

We demonstrate coherent supercontinuum generation (SCG) in a monolithically integrated lithium-niobate waveguide, under the presence of second- and third-order nonlinear effects. We achieve more than two octaves of optical bandwidth in a 0.5-cm-long waveguide with 100-picojoule-level pulses. Dispersion engineering of the waveguide allows for spectral overlap between the SCG and the second harmonic, which enables direct detection of the carrier-envelope offset frequency fCEO using a single waveguide. We measure the fCEO of our femtosecond pump source with a 30-dB signal-to-noise ratio.

Strong coupling and high-contrast all-optical modulation in atomic cladding waveguides.

In recent years, there has been marked increase in research aimed to introduce alkali vapours into guided-wave configurations. Owing to the significant reduction in device dimensions, the increase in density of states, the interaction with surfaces and primarily the high intensities carried along the structure, a plethora of light-vapour interactions can be studied. Moreover, such platform may exhibit new functionalities such as low-power nonlinear light-matter interactions. One immense challenge is to study the effects of quantum coherence and shifts in nanoscale waveguides, characterized by ultra-small mode areas and fast dynamics. Here, we construct a highly compact 17 mm long serpentine silicon-nitride atomic vapour cladding waveguide. Fascinating and important phenomena such as van-der-Waals shifts, dynamical stark shifts and coherent effects such as strong coupling (in the form of Autler-Townes splitting) are observed. Some of these effects may play an important role in applications such as all-optical switching, frequency referencing and magnetometry.

Dielectric Metasurface as a Platform for Spatial Mode Conversion in Nanoscale Waveguides.

We experimentally demonstrate a nanoscale mode converter that performs coupling between the first two transverse electric-like modes of a silicon-on-insulator waveguide. The device operates by introducing a nanoscale periodic perturbation in its effective refractive index along the propagation direction and a graded effective index profile along its transverse direction. The periodic perturbation provides phase matching between the modes, while the graded index profile, which is realized by the implementation of nanoscale dielectric metasurface consisting of silicon features that are etched into the waveguide taking advantage of the effective medium concept, provides the overlap between the modes. Following the device design and numerical analysis using three-dimensional finite difference time domain simulations, we have fabricated the device and characterized it by directly measuring the modal content using optical imaging microscopy. From these measurements, the mode purity is estimated to be 95% and the transmission relative to an unperturbed strip waveguide is as high as 88%. Finally, we extend this approach to accommodate for the coupling between photonic and plasmonic modes. Specifically, we design and numerically demonstrate photonic to plasmonic mode conversion in a hybrid waveguide in which photonic and surface plasmon polariton modes can be guided in the silicon core and in the silicon/metal interface, respectively. The same method can also be used for coupling between symmetric and antisymmetric plasmonic modes in metal-insulator-metal or insulator-metal-insulator structures. On the basis of the current demonstration, we believe that such nanoscale dielectric metasurface-based mode converters can now be realized and become an important building block in future nanoscale photonic and plasmonic devices. Furthermore, the demonstrated platform can be used for the implementation of other chip scale components such as splitters, combiners couplers, and more.

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 µm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Direct observation of optical near field in nanophotonics devices at the nanoscale using Scanning Thermal Microscopy.

In recent years, following the miniaturization and integration of passive and active nanophotonic devices, thermal characterization of such devices at the nanoscale is becoming a task of crucial importance. The Scanning Thermal Microscopy (SThM) is a natural candidate for performing this task. However, it turns out that the SThM capability to precisely map the temperature of a photonic sample in the presence of light interacting with the sample is limited. This is because of the significant absorption of light by the SThM probe. As a result, the temperature of the SThM probe increases and a significant electrical signal which is directly proportional to the light intensity is obtained. As such, instead of measuring the temperature of the sample, one may directly measure the light intensity profile. While this is certainly a limitation in the context of thermal characterization of nanophotonic devices, this very property provides a new opportunity for optical near field characterization. In this paper we demonstrate numerically and experimentally the optical near field measurements of nanophotonic devices using a SThM probe. The system is characterized using several sets of samples with different properties and various wavelengths of operation. Our measurements indicate that the light absorption by the probe can be even larger than the light induced heat generation in the sample. The frequency response of the SThM system is characterized and the 3 dB frequency response was found to be ~1.5 kHz. The simplicity of the SThM system which eliminates the need for complex optical measurement setups together with its broadband wavelength of operation makes this approach an attractive alternative to the more conventional aperture and apertureless NSOM approaches. Finally, referring to its original role in characterizing thermal effects at the nanoscale, we propose an approach for characterizing the temperature profile of nanophotonic devices which are heated by light absorption within the device. This is achieved by spatially separating between the optical near field distribution and the SThM probe, taking advantage of the broader temperature profile as compared to the more localized light profile.

Polarization selective beam shaping using nanoscale dielectric metasurfaces.

Metasurfaces consisting of ultrathin nanostructures are utilized to control the properties of light including its phase, amplitude and polarization. Hereby, we demonstrate the capability of such structures to perform arbitrary polarization selective beam shaping using dielectric nanoscale metasurfaces implemented in silicon. By illuminating the structure with right handed circular polarization we reconstruct a desired image. When switching the polarization into its orthogonal state, we obtain the reconstruction of a different image. This demonstration shows the potential of using dielectric metasurfaces for high efficiency beam shaping applications in general, and specifically for polarization coded beam shaping.

Ultrahigh-Q silicon resonators in a planarized local oxidation of silicon platform.

We describe a platform for the fabrication of smooth waveguides and ultrahigh-quality-factor (Q factor) silicon resonators using a modified local oxidation of silicon (LOCOS) technique. Unlike the conventional LOCOS process, our approach allows the fabrication of nearly planarized structures, supporting a multilayer silicon photonics configuration. Using this approach we demonstrate the fabrication and the characterization of a microdisk resonator with an intrinsic Q factor that is one of the highest Q factors achieved with a compact silicon-on-insulator platform.

On-chip detection of radiation guided by dielectric-loaded plasmonic waveguides.

We report a novel approach for on-chip electrical detection of the radiation guided by dielectric-loaded surface plasmon polariton waveguides (DLSPPW) and DLSPPW-based components. The detection is realized by fabricating DLSPPW components on the surface of a gold (Au) pad supported by a silicon (Si) substrate supplied with aluminum pads facilitating electrical connections, with the gold pad being perforated in a specific location below the DLSPPWs in order to allow a portion of the DLSPPW-guided radiation to leak into the Si-substrate, where it is absorbed and electrically detected. We present two-dimensional photocurrent maps obtained when the laser beam is scanning across the gold pad containing the fabricated DLSPPW components that are excited via grating couplers located at the DLSPPW tapered terminations. By comparing photocurrent signals obtained when scanning over a DLSPPW straight waveguide with those related to a DLSPPW racetrack resonator, we first determine the background signal level and then the corrected DLSPPW resonator spectral response, which is found consistent with that obtained from full wave numerical simulations. The approach developed can be extended to other plasmonic waveguide configurations and advantageously used for rapid characterization of complicated plasmonic circuits.

Experimental demonstration of CMOS-compatible long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs).

We demonstrate the design, fabrication and experimental characterization of long-range dielectric-loaded surface plasmon-polariton waveguides (LR-DLSPPWs) that are compatible with complementary metal-oxide semiconductor (CMOS) technology. The demonstrated waveguide configuration represents a silicon nitride ridge atop a thin strip of metal, which is positioned on a partially oxidized layer of silicon supported by a silicon oxide layer. The demonstrated waveguides feature reasonable mode confinement (~0.5µm2) and show rather long propagation (~700 µm) at telecom wavelengths. Owing to the existence of a metal strip within the structure, one can envision the co-propagation of electrical and photonic signals within the structure, enabling thereby seamless integration of photonic and electronic circuits. Electrical signals in metal strips supporting plasmonic modes can be used for variety of applications, e.g. to control the propagation of radiation via the thermo-optic effect.

Direct temperature mapping of nanoscale plasmonic devices.

Side by side with the great advantages of plasmonics in nanoscale light confinement, the inevitable ohmic loss results in significant joule heating in plasmonic devices. Therefore, understanding optical-induced heat generation and heat transport in integrated on-chip plasmonic devices is of major importance. Specifically, there is a need for in situ visualization of electromagnetic induced thermal energy distribution with high spatial resolution. This paper studies the heat distribution in silicon plasmonic nanotips. Light is coupled to the plasmonic nanotips from a silicon nanowaveguide that is integrated with the tip on chip. Heat is generated by light absorption in the metal surrounding the silicon nanotip. The steady-state thermal distribution is studied numerically and measured experimentally using the approach of scanning thermal microscopy. It is shown that following the nanoscale heat generation by a 10 mW light source within a silicon photonic waveguide the temperature in the region of the nanotip is increased by ∼ 15 °C compared with the ambient temperature. Furthermore, we also perform a numerical study of the dynamics of the heat transport. Given the nanoscale dimensions of the structure, significant heating is expected to occur within the time frame of picoseconds. The capability of measuring temperature distribution of plasmonic structures at the nanoscale is shown to be a powerful tool and may be used in future applications related to thermal plasmonic applications such as control heating of liquids, thermal photovoltaic, nanochemistry, medicine, heat-assisted magnetic memories, and nanolithography.

Nanoscale plasmonic memristor with optical readout functionality.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 µm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Subwavelength plasmonics for graded-index optics on a chip.

Planar plasmonic devices are becoming attractive for myriad applications, owing to their potential compatibility with standard microelectronics technology and the capability for densely integrating a large variety of plasmonic devices on a chip. Mitigating the challenges of using plasmonics in on-chip configurations requires precise control over the properties of plasmonic modes, in particular their shape and size. Here we achieve this goal by demonstrating a planar plasmonic graded-index lens focusing surface plasmons propagating along the device. The plasmonic mode is manipulated by carving subwavelength features into a dielectric layer positioned on top of a uniform metal film, allowing the local effective index of the plasmonic mode to be controlled using a single binary lithographic step. Focusing and divergence of surface plasmons is demonstrated experimentally. The demonstrated approach can be used for manipulating the propagation of surface plasmons, e.g., for beam steering, splitting, cloaking, mode matching, and beam shaping applications.

Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator.

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7 V-dB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low V(π)L of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

Nanoscale light-matter interactions in atomic cladding waveguides.

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light-matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light-vapour interactions on a chip. Specifically, we demonstrate light-matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime.

High resolution direct measurement of temperature distribution in silicon nanophotonics devices.

Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Frequency locked micro disk resonator for real time and precise monitoring of refractive index.

We experimentally demonstrate a frequency modulation locked servo loop, locked to a resonance line of an on-chip microdisk resonator in a silicon nitride platform. By using this approach, we demonstrate real-time monitoring of refractive index variations with a precision approaching 10(-7) RIU, using a moderate Q factor of 10(4). The approach can be applied for intensity independent, dynamic and precise index of refraction monitoring for biosensing applications.

Plasmonic V-groove waveguides with Bragg grating filters via nanoimprint lithography.

We demonstrate spectral filtering with state-of-the-art Bragg gratings in plasmonic V-groove waveguides fabricated by wafer scale processing based on nanoimprint lithography. Transmission spectra of the devices having 16 grating periods exhibit spectral rejection of the channel plasmon polaritons with 8.2 dB extinction ratio and -3 dB bandwidth of Δλ = 39.9 nm near telecommunications wavelengths. Near-field scanning optical microscopy measurements verify spectral reflection from the grating structures, and the oscillations of propagating modes along grating-less V-grooves correspond well with effective refractive index values calculated by finite element simulations in COMSOL. The results represent advancement towards the implementation of plasmonic V-grooves with greater functional complexity and mass-production compatibility.

Near field phase mapping exploiting intrinsic oscillations of aperture NSOM probe.

An innovative, simple, compact and low cost approach for phase mapping based on the intrinsic modulation of an aperture Near Field Scanning Optical Microscope probe is analyzed and experimentally demonstrated. Several nanoscale silicon waveguides are phase-mapped using this approach, and the different modes of propagation are obtained via Fourier analysis. The obtained measured results are in good agreement with the effective indexes of the modes calculated by electromagnetic simulations. Owing to its simplicity and effectiveness, the demonstrated system is a potential candidate for integration with current near field systems for the characterization of nanophotonic components and devices.