Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system.

Spin-related electronic phase transitions in the fractional quantum Hall regime are accompanied by a large change in resistance. Combined with their sensitivity to spin orientation of nuclei residing in the same plane as the 2D electrons, they offer a convenient electrical probe to carry out nuclear magnetometry. Despite conditions which should allow both electronic and nuclear-spin subsystems to approach thermodynamic equilibrium, we uncover for the nuclei a remarkable and strongly electronic filling-factor-dependent deviation from the anticipated thermal nuclear-spin polarization.

Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor.

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.

Ising ferromagnetism and domain morphology in the fractional quantum Hall regime.

The density driven quantum phase transition between the unpolarized and fully spin polarized nu = 2/3 fractional quantum Hall state is accompanied by hysteresis in accord with 2D Ising ferromagnetism and domain formation. The temporal behavior is reminiscent of the Barkhausen and time-logarithmic magnetic after-effects ubiquitous in familiar ferromagnets. It too suggests domain morphology and, in conjunction with NMR, intricate domain dynamics, which is partly mediated by the contact hyperfine interaction with nuclear spins of the host semiconductor.

Quantum interference in artificial band structures.

Magnetotransport experiments on two-dimensional electron systems with an atomically precise, one-dimensional potential modulation reveal striking quantum interference oscillations. Within a semiclassical framework, they are recognized either as self-interference along closed orbits, many of them rendered possible by magnetic breakdown between Fermi contour segments of the artificial band structure, or as interference-enhanced backscattering. The known commensurability oscillations appear as a special case of the latter mechanism.