Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s.

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

Serial 100 Gb/s connectivity based on polymer photonics and InP-DHBT electronics.

We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT electronics with the polymer board. Evaluation is made at 80 and 100 Gb/s through eye-diagrams and BER measurements using a receiver module that integrates a pin-photodiode and an electrical 1:2 demultiplexer. Error-free performance is confirmed both at 80 and 100 Gb/s revealing the viability of the approach and the potential of the technology.

Linearized electro-optic modulators based on a two-section Y-fed directional coupler.

We experimentally demonstrate a linearized Y-fed directional coupler (DC) modulator based on an electro-optic (EO) polymer waveguide. The spurious free dynamic range of 119 dB/Hz2/3, which is 11 dB higher than that of the conventional Mach-Zehnder modulator, is achieved by introducing the reversed Δß technique in the two-section Y-fed DC. The in-device EO coefficient (r33) of the fabricated device is as high as 79 pm/V in 1.55 µm wavelength, which is 88% of a single film r33 of LPD-80/APC.

Electro-optic modulator with exceptional power-size performance enabled by transparent conducting electrodes.

An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vpi of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VpiL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm(2) of power length product) in a dual-drive configuration. The trade-off between Vpi, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve Vpi = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.

Wavelength dependence of irreversible photobleaching of dye-doped polymer waveguide materials.

We report the irreversible bleaching characteristics of 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM) doped into perfluorocyclobutene (PFCB) and a new material known as DH-6 doped into amorphous polycarbonate (APC) by a monochromatic bleaching source. The wavelength dependent rate constants for the irreversible bleaching process are found, and the experimental bleaching characteristics are compared to the theoretical bleaching characteristics determined from a kinetic model of the bleaching process.