Coexistence of Van Hove singularities and pseudomagnetic fields in modulated graphene bilayer.

The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron correlation, thanks to the moiré superlattice potentials, while the periodic or triaxial strains induce discretization of the band structure into Landau levels without the need for an external magnetic field. We fabricated a hybrid system comprising both the stacking and bending tuning knobs. We have grown the graphene monolayers by chemical vapor deposition, using 12C and 13C precursors, which enabled us to individually address the layers through Raman spectroscopy mapping. We achieved the long-range spatial modulation by sculpturing the top layer (13C) over uniform magnetic nanoparticles (NPs) deposited on the bottom layer (12C). An atomic force microscopy study revealed that the top layer tends to relax into pyramidal corrugations with C3 axial symmetry at the position of the NPs, which have been widely reported as a source of large pseudomagnetic fields (PMFs) in graphene monolayers. The modulated graphene bilayer (MGBL) also contains a few micrometer large domains, with the twist angle ∼10°, which were identified via extreme enhancement of the Raman intensity of the G-mode due to formation of van Hove singularities (VHSs). We thereby conclude that the twist-induced VHSs coexist with the PMFs generated in the strained pyramidal objects without mutual disturbance. The graphene bilayer modulated with magnetic NPs is a non-trivial hybrid system that accommodates features of twist-induced VHSs and PMFs in environs of giant classical spins.

Direct Observation of Symmetry-Dependent Electron-Phonon Coupling in Black Phosphorus.

Electron-phonon coupling in two-dimensional nanomaterials plays a fundamental role in determining their physical properties. Such interplay is particularly intriguing in semiconducting black phosphorus (BP) due to the highly anisotropic nature of its electronic structure and phonon dispersions. Here we report the direct observation of symmetry-dependent electron-phonon coupling in BP by performing the polarization-selective resonance Raman measurement in the visible and ultraviolet regimes, focusing on the out-of-plane Ag1 and in-plane Ag2 phonon modes. Their intrinsic resonance Raman excitation profiles (REPs) were extracted and quantitatively compared. The in-plane Ag2 mode exhibits remarkably strong resonance enhancement across the excitation wavelengths when the excitation polarization is parallel to the armchair (Ag2//AC) direction. In contrast, a dramatically weak resonance effect was observed for the same mode with the polarization parallel to zigzag (Ag2//ZZ) direction and for the out-of-plane Ag1 mode (Ag1//AC and Ag1//ZZ). Analysis on quantum perturbation theory and first-principles calculations on the anisotropic electron distributions in BP demonstrated that electron-phonon coupling considering the symmetry of the involved excited states and phonon vibration patterns is responsible for this phenomenon. Further analysis of the polarization-dependent REPs for Ag phonons allows us to resolve the existing controversies on the physical origin of Raman anomaly in BP and its dependence on excitation energy, sample thickness, phonon modes, and crystalline orientation. Our study gives deep insights into the underlying interplay between electrons and phonons in BP and paves the way for manipulating the electron-phonon coupling in anisotropic nanomaterials for future device applications.

Tailoring Superconductivity with Quantum Dislocations.

Despite the established knowledge that crystal dislocations can affect a material's superconducting properties, the exact mechanism of the electron-dislocation interaction in a dislocated superconductor has long been missing. Being a type of defect, dislocations are expected to decrease a material's superconducting transition temperature (Tc) by breaking the coherence. Yet experimentally, even in isotropic type I superconductors, dislocations can either decrease, increase, or have little influence on Tc. These experimental findings have yet to be understood. Although the anisotropic pairing in dirty superconductors has explained impurity-induced Tc reduction, no quantitative agreement has been reached in the case a dislocation given its complexity. In this study, by generalizing the one-dimensional quantized dislocation field to three dimensions, we reveal that there are indeed two distinct types of electron-dislocation interactions. Besides the usual electron-dislocation potential scattering, there is another interaction driving an effective attraction between electrons that is caused by dislons, which are quantized modes of a dislocation. The role of dislocations to superconductivity is thus clarified as the competition between the classical and quantum effects, showing excellent agreement with existing experimental data. In particular, the existence of both classical and quantum effects provides a plausible explanation for the illusive origin of dislocation-induced superconductivity in semiconducting PbS/PbTe superlattice nanostructures. A quantitative criterion has been derived, in which a dislocated superconductor with low elastic moduli and small electron effective mass and in a confined environment is inclined to enhance Tc. This provides a new pathway for engineering a material's superconducting properties by using dislocations as an additional degree of freedom.

Strengthening of Ceramic-based Artificial Nacre via Synergistic Interactions of 1D Vanadium Pentoxide and 2D Graphene Oxide Building Blocks.

Nature has evolved hierarchical structures of hybrid materials with excellent mechanical properties. Inspired by nacre's architecture, a ternary nanostructured composite has been developed, wherein stacked lamellas of 1D vanadium pentoxide nanofibres, intercalated with water molecules, are complemented by 2D graphene oxide (GO) nanosheets. The components self-assemble at low temperature into hierarchically arranged, highly flexible ceramic-based papers. The papers' mechanical properties are found to be strongly influenced by the amount of the integrated GO phase. Nanoindentation tests reveal an out-of-plane decrease in Young's modulus with increasing GO content. Furthermore, nanotensile tests reveal that the ceramic-based papers with 0.5 wt% GO show superior in-plane mechanical performance, compared to papers with higher GO contents as well as to pristine V2O5 and GO papers. Remarkably, the performance is preserved even after stretching the composite material for 100 nanotensile test cycles. The good mechanical stability and unique combination of stiffness and flexibility enable this material to memorize its micro- and macroscopic shape after repeated mechanical deformations. These findings provide useful guidelines for the development of bioinspired, multifunctional systems whose hierarchical structure imparts tailored mechanical properties and cycling stability, which is essential for applications such as actuators or flexible electrodes for advanced energy storage.

Bottom-up Design of Three-Dimensional Carbon-Honeycomb with Superb Specific Strength and High Thermal Conductivity.

Low-dimensional carbon allotropes, from fullerenes, carbon nanotubes, to graphene, have been broadly explored due to their outstanding and special properties. However, there exist significant challenges in retaining such properties of basic building blocks when scaling them up to three-dimensional materials and structures for many technological applications. Here we show theoretically the atomistic structure of a stable three-dimensional carbon honeycomb (C-honeycomb) structure with superb mechanical and thermal properties. A combination of sp2 bonding in the wall and sp3 bonding in the triple junction of C-honeycomb is the key to retain the stability of C-honeycomb. The specific strength could be the best in structural carbon materials, and this strength remains at a high level but tunable with different cell sizes. C-honeycomb is also found to have a very high thermal conductivity, for example, >100 W/mK along the axis of the hexagonal cell with a density only ∼0.4 g/cm3. Because of the low density and high thermal conductivity, the specific thermal conductivity of C-honeycombs is larger than most engineering materials, including metals and high thermal conductivity semiconductors, as well as lightweight CNT arrays and graphene-based nanocomposites. Such high specific strength, high thermal conductivity, and anomalous Poisson's effect in C-honeycomb render it appealing for the use in various engineering practices.

Detection of Multiconfigurational States of Hydrogen-Passivated Silicene Nanoclusters.

Utilizing density functional theory (DFT) and a complete active space self-consistent field (CASSCF) approach,we study the electronic properties of rectangular silicene nano clusters with hydrogen passivated edges denoted by H-SiNCs (nz,na), with nz and na representing the zigzag and armchair directions, respectively. The results show that in the nz direction, the H-SiNCs prefer to be in a singlet (S = 0) ground state for nz > na. However, a transition from a singlet (S = 0) to a triplet (S = 1) ground state is revealed for na > nz. Through the calculated Raman spectrum, the S = 0 and S = 1 ground states can be observed by the E2g (G) and A (D) Raman modes. Furthermore, H-SiNC clusters are shown to have HOMO-LUMO (HL) energy gaps, which decrease as a function of na and nz for S = 0 and S = 1 states. The H-SiNC with a S = 1 ground state can be potentially used for silicene-based spintronic devices.

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached the sub-10 nm scale due to the multiple challenges related to nanofabrication at this length scale and the high contact resistance traditionally observed in MoS2 transistors. Here, using the semiconducting-to-metallic phase transition of MoS2, we demonstrate sub-10 nm channel-length transistor fabrication by directed self-assembly patterning of mono- and trilayer MoS2. This is done in a 7.5 nm half-pitch periodic chain of transistors where semiconducting (2H) MoS2 channel regions are seamlessly connected to metallic-phase (1T') MoS2 access and contact regions. The resulting 7.5 nm channel-length MoS2 FET has a low off-current of 10 pA/µm, an on/off current ratio of >107, and a subthreshold swing of 120 mV/dec. The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS2 for future sub-10 nm technology nodes.

Cellulose nanofiber backboned Prussian blue nanoparticles as powerful adsorbents for the selective elimination of radioactive cesium.

On 11 March 2011, the day of the unforgettable disaster of the 9 magnitude Tohoku earthquake and quickly followed by the devastating Tsunami, a damageable amount of radionuclides had dispersed from the Fukushima Daiichi's damaged nuclear reactors. Decontamination of the dispersed radionuclides from seawater and soil, due to the huge amounts of coexisting ions with competitive functionalities, has been the topmost difficulty. Ferric hexacyanoferrate, also known as Prussian blue (PB), has been the most powerful material for selectively trapping the radioactive cesium ions; its high tendency to form stable colloids in water, however, has made PB to be impossible for the open-field radioactive cesium decontamination applications. A nano/nano combinatorial approach, as is described in this study, has provided an ultimate solution to this intrinsic colloid formation difficulty of PB. Cellulose nanofibers (CNF) were used to immobilize PB via the creation of CNF-backboned PB. The CNF-backboned PB (CNF/PB) was found to be highly tolerant to water and moreover, it gave a 139 mg/g capability and a million (106) order of magnitude distribution coefficient (Kd) for absorbing of the radioactive cesium ion. Field studies on soil and seawater decontaminations in Fukushima gave satisfactory results, demonstrating high capabilities of CNF/PB for practical applications.

Anisotropic Tuning of Graphite Thermal Conductivity by Lithium Intercalation.

Understanding thermal transport in lithium intercalated layered materials is not only important for managing heat generation and dissipation in lithium ion batteries but also the understanding potentially provides a novel way to design materials with reversibly tunable thermal conductivity. In this work, the thermal conductivity of lithium-graphite intercalation compounds (LixC6) is calculated using molecular dynamics simulations as a function of the amount of lithium intercalated. We found that intercalation of lithium has an anisotropic effect on tuning the thermal conductivity: the thermal conductivity in the basal plane decreases monotonically from 1232 W/m·K of pristine graphite to 444 W/m·K of the fully lithiated LiC6, while the thermal conductivity along the c-axis decreases first from 6.5 W/m·K for graphite to 1.3 W/m·K for LiC18 and then increases to 5.0 W/m·K for LiC6 as the lithium composition increases. More importantly, we provide the very first atomic-scale insight into the effect of lithium intercalation on the spectral phonon properties of graphite. The intercalated lithium ions are found to suppress the phonon lifetime and to reduce the group velocity of phonons parallel to the basal plane but significantly to increase the phonon group velocity along the c-axis, which anisotropically tunes the thermal conductivity of lithiated graphite compounds. This work could shed some light on the search for tunable thermal conductivity materials and might have strong impacts on the thermal management of lithium ion batteries.

Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition.

High-quality large-area few-layer 1T' MoTe2 films with high homogeneity are synthesized by the controlled tellurization of MoO3 film. The Mo precursor plays a key role in determining the quality and morphology of the 1T' MoTe2 . Furthermore, the amount of Te strongly influences the phase of the MoTe2 . The growth method paves the way toward the scalable production of 1T' MoTe2 -based applications.

Enhanced Thermionic-Dominated Photoresponse in Graphene Schottky Junctions.

Vertical heterostructures of van der Waals materials enable new pathways to tune charge and energy transport characteristics in nanoscale systems. We propose that graphene Schottky junctions can host a special kind of photoresponse that is characterized by strongly coupled heat and charge flows that run vertically out of the graphene plane. This regime can be accessed when vertical energy transport mediated by thermionic emission of hot carriers overwhelms electron-lattice cooling as well as lateral diffusive energy transport. As such, the power pumped into the system is efficiently extracted across the entire graphene active area via thermionic emission of hot carriers into a semiconductor material. Experimental signatures of this regime include a large and tunable internal responsivity [Formula: see text] with a nonmonotonic temperature dependence. In particular, [Formula: see text] peaks at electronic temperatures on the order of the Schottky barrier potential ϕ and has a large upper limit [Formula: see text] (e/ϕ = 10 A/W when ϕ = 100 meV). Our proposal opens up new approaches for engineering the photoresponse in optically active graphene heterostructures.

In-Plane Optical Anisotropy of Layered Gallium Telluride.

Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C2h(3) space group. Investigating the in-plane optical anisotropy, including the electron-photon and electron-phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.

Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

Cartilage-inspired superelastic ultradurable graphene aerogels prepared by the selective gluing of intersheet joints.

In this study, we demonstrate a cartilage-inspired superelastic and ultradurable nanocomposite strategy for the selective inclusion of viscoelastic poly(dimethylsiloxane) (PDMS) into graphene sheet junctions to create effective stress-transfer pathways within three-dimensional (3D) graphene aerogels (GAs). Inspired by the joint architectures in the human body, where small amounts of soft cartilage connect stiff (or hard) but hollow (and thus lightweight) bones, the 3D internetworked GA@PDMS achieves synergistic toughening. The resulting GA@PDMS nanocomposites exhibit fully reversible structural deformations (99.8% recovery even at a 90% compressive strain) and high compressive mechanical strength (448.2 kPa at a compressive strain of 90%) at repeated compression cycles. Owing to the combination of excellent mechanical and electrical properties, the GA@PDMS nanocomposites are used as signal transducers for strain sensors, showing very short response and recovery times (in the millisecond range) with reliable sensitivity and extreme durability. Furthermore, the proposed system is applied to electronic scales with a large detectable weight of about 4600 times greater than its own weight. Such bio-inspired cartilage architecture opens the door to fabricate new 3D multifunctional and mechanically durable nanocomposites for emerging applications, which include sensors, actuators, and flexible devices.

Correction: Cartilage-inspired superelastic ultradurable graphene aerogels prepared by the selective gluing of intersheet joints.

Correction for 'Cartilage-inspired superelastic ultradurable graphene aerogels prepared by the selective gluing of intersheet joints' by Jin-Yong Hong, et al., Nanoscale, 2016, DOI: 10.1039/c6nr01986b.

Controlled Sculpture of Black Phosphorus Nanoribbons.

Black phosphorus (BP) is a highly anisotropic allotrope of phosphorus with great promise for fast functional electronics and optoelectronics. We demonstrate the controlled structural modification of few-layer BP along arbitrary crystal directions with sub-nanometer precision for the formation of few-nanometer-wide armchair and zigzag BP nanoribbons. Nanoribbons are fabricated, along with nanopores and nanogaps, using a combination of mechanical-liquid exfoliation and in situ transmission electron microscopy (TEM) and scanning TEM nanosculpting. We predict that the few-nanometer-wide BP nanoribbons realized experimentally possess clear one-dimensional quantum confinement, even when the systems are made up of a few layers. The demonstration of this procedure is key for the development of BP-based electronics, optoelectronics, thermoelectrics, and other applications in reduced dimensions.

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus.

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect of anisotropy has remained unsatisfactory to date, as shown by a number of inconsistencies in the recent literature. We use angle-resolved absorption and Raman spectroscopies to investigate the role of anisotropy on the electron-photon and electron-phonon interactions in BP. We highlight, both experimentally and theoretically, a nontrivial dependence between anisotropy and flake thickness and photon and phonon energies. We show that once understood, the anisotropic optical absorption appears to be a reliable and simple way to identify the crystalline orientation of BP, which cannot be determined from Raman spectroscopy without the explicit consideration of excitation wavelength and flake thickness, as commonly used previously.

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application.

This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe2 stacked on multilayer MoS2. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS2/WSe2 heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V(-1). Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS2/WSe2 heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy-band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.

Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS2.

van der Waals homo- and heterostructures assembled by stamping monolayers together present optoelectronic properties suitable for diverse applications. Understanding the details of the interlayer stacking and resulting coupling is crucial for tuning these properties. We investigated the low-frequency interlayer shear and breathing Raman modes (<50 cm(-1)) in twisted bilayer MoS2 by Raman spectroscopy and first-principles modeling. Twisting significantly alters the interlayer stacking and coupling, leading to notable frequency and intensity changes of low-frequency modes. The frequency variation can be up to 8 cm(-1) and the intensity can vary by a factor of ∼5 for twisting angles near 0° and 60°, where the stacking is a mixture of high-symmetry stacking patterns and is thus sensitive to twisting. For twisting angles between 20° and 40°, the interlayer coupling is nearly constant because the stacking results in mismatched lattices over the entire sample. It follows that the Raman signature is relatively uniform. Note that for some samples, multiple breathing mode peaks appear, indicating nonuniform coupling across the interface. In contrast to the low-frequency interlayer modes, high-frequency intralayer Raman modes are much less sensitive to interlayer stacking and coupling. This research demonstrates the effectiveness of low-frequency Raman modes for probing the interfacial coupling and environment of twisted bilayer MoS2 and potentially other two-dimensional materials and heterostructures.