Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates.

The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned. To validate this prediction, wafer-scale Cu foils with abundant twin boundaries were synthesized, and on the surfaces of these polycrystalline Cu foils, we have successfully grown wafer-scale single-crystal graphene and hexagonal boron nitride films. In addition, to greatly increasing the availability of large area high-quality 2D single crystals, our discovery also extends the fundamental understanding of materials epitaxy.

The Effect of Ethanol on Abnormal Grain Growth in Copper Foils.

Single-crystal Cu not only has high electrical and thermal conductivity, but can also be used as a promising platform for the epitaxial growth of two-dimensional materials. Preparing large-area single-crystal Cu foils from polycrystalline foils has emerged as the most promising technique in terms of its simplicity and effectiveness. However, the studies on transforming polycrystalline foil into large-area single-crystal foil mainly focus on the influence of annealing temperature and strain energy on the recrystallization process of copper foil, while studies on the effect of annealing atmosphere on abnormal grain growth behavior are relatively rare. It is necessary to carry out more studies on the effect of annealing atmosphere on grain growth behavior to understand the recrystallization mechanism of metal. Here, we found that introduction of ethanol in pure argon annealing atmosphere will cause the abnormal grain growth of copper foil. Moreover, the number of abnormally grown grains can be controlled by the concentration of ethanol in the annealing atmosphere. Using this technology, the number of abnormally grown grains on the copper foil can be controlled to single one. This abnormally grown grain will grow rapidly to decimeter-size by consuming the surrounding small grains. This work provides a new perspective for the understanding of the recrystallization of metals, and a new method for the preparation of large-area single-crystal copper foils.

Batch production of uniform graphene films via controlling gas-phase dynamics in confined space.

Batch production of continuous and uniform graphene films is critical for the application of graphene. Chemical vapor deposition (CVD) has shown great promise for mass producing high-quality graphene films. However, the critical factors affected the uniformity of graphene films during the batch production need to be further studied. Herein, we propose a method for batch production of uniform graphene films by controlling the gaseous carbon source to be uniformly distributed near the substrate surface. By designing the growth space of graphene into a rectangular channel structure, we adjusted the velocity of feedstock gas flow to be uniformly distributed in the channel, which is critical for uniform graphene growth. The monolayer graphene film grown inside the rectangular channel structure shows high uniformity with average sheet resistance of 345 Ω sq-1 without doping. The experimental and simulation results show that the placement of the substrates during batch growth of graphene films will greatly affect the distribution of gas-phase dynamics near the substrate surface and the growth process of graphene. Uniform graphene films with large-scale can be prepared in batches by adjusting the distribution of gas-phase dynamics.