Observation of π solitons in oscillating waveguide arrays.

Floquet systems with periodically varying in time parameters enable realization of unconventional topological phases that do not exist in static systems with constant parameters and that are frequently accompanied by appearance of novel types of the topological states. Among such Floquet systems are the Su-Schrieffer-Heeger lattices with periodically-modulated couplings that can support at their edges anomalous π modes of topological origin despite the fact that the lattice spends only half of the evolution period in topologically nontrivial phase, while during other half-period it is topologically trivial. Here, using Su-Schrieffer-Heeger arrays composed from periodically oscillating waveguides inscribed in transparent nonlinear optical medium, we report experimental observation of photonic anomalous π modes residing at the edge or in the corner of the one- or two-dimensional arrays, respectively, and demonstrate a new class of topological π solitons bifurcating from such modes in the topological gap of the Floquet spectrum at high powers. π solitons reported here are strongly oscillating nonlinear Floquet states exactly reproducing their profiles after each longitudinal period of the structure. They can be dynamically stable in both one- and two-dimensional oscillating waveguide arrays, the latter ones representing the first realization of the Floquet photonic higher-order topological insulator, while localization properties of such π solitons are determined by their power.

Observation of nonlinear disclination states.

Introduction of controllable deformations into periodic materials that lead to disclinations in their structure opens novel routes for construction of higher-order topological insulators hosting topological states at disclinations. Appearance of these topological states is consistent with the bulk-disclination correspondence principle, and is due to the filling anomaly that results in fractional charges to the boundary unit cells. So far, topological disclination states were observed only in the linear regime, while the interplay between nonlinearity and topology in the systems with disclinations has been never studied experimentally. We report here on the experimental observation of the nonlinear photonic disclination states in waveguide arrays with pentagonal or heptagonal disclination cores inscribed in transparent optical medium using the fs-laser writing technique. The transition between nontopological and topological phases in such structures is controlled by the Kekulé distortion coefficient r with topological phase hosting simultaneously disclination states at the inner disclination core and spatially separated from them corner-I, corner-II, and extended edge states at the outer edge of the structure. We show that the robust nonlinear disclination states bifurcate from their linear counterparts and that location of their propagation constants in the gap and, hence, their spatial localization can be controlled by their power. Nonlinear disclination states can be efficiently excited by Gaussian input beams, but only if they are focused into the waveguides belonging to the disclination core, where such topological states reside. Our results open new prospects for investigation of nonlinear effects in topological systems with disclinations and are relevant for different areas of science, including Bose-Einstein and polariton condensates, where potentials with the disclinations can be created.

Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth.

Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.