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1.
Nano Lett ; 19(7): 4371-4379, 2019 Jul 10.
Artigo em Inglês | MEDLINE | ID: mdl-31180688

RESUMO

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods, chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013/cm2 to below 1011/cm2. Because these point defects act as centers for nonradiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

2.
Nano Lett ; 16(11): 6910-6915, 2016 11 09.
Artigo em Inglês | MEDLINE | ID: mdl-27672705

RESUMO

We present a new nanoscale superconducting quantum interference device (SQUID) whose interference pattern can be shifted electrically in situ. The device consists of a nanoscale four-terminal-four-junction SQUID fabricated at the apex of a sharp pipet using a self-aligned three-step deposition of Pb. In contrast to conventional two-terminal-two-junction SQUIDs that display optimal sensitivity when flux biased to about a quarter of the flux quantum, the additional terminals and junctions allow optimal sensitivity at arbitrary applied flux, thus eliminating the magnetic field "blind spots". We demonstrate spin sensitivity of 5 to 8 µB/Hz1/2 over a continuous field range of 0 to 0.5 T with promising applications for nanoscale scanning magnetic imaging.

3.
Nano Lett ; 14(11): 6481-7, 2014 Nov 12.
Artigo em Inglês | MEDLINE | ID: mdl-25310273

RESUMO

Nanoscale superconducting quantum interference devices (SQUIDs) demonstrate record sensitivities to small magnetic moments but are typically sensitive only to the field component that is normal to the plane of the SQUID and out-of-plane with respect to the scanned surface. We report on a nanoscale three-junction Pb SQUID, which is fabricated on the apex of a sharp tip. Because of its three-dimensional structure, it exhibits a unique tunable sensitivity to both in-plane and out-of-plane fields. We analyze the two-dimensional interference pattern from both numerical and experimental points of view. This device is integrated into a scanning microscope, and its ability to independently measure the different components of the magnetic field with outstanding spin sensitivity better than 5 µB/Hz(1/2) is demonstrated. This highlights its potential as a local probe of nanoscale magnetic structures.

4.
Nat Nanotechnol ; 8(9): 639-44, 2013 Sep.
Artigo em Inglês | MEDLINE | ID: mdl-23995454

RESUMO

Superconducting quantum interference devices (SQUIDs) can be used to detect weak magnetic fields and have traditionally been the most sensitive magnetometers available. However, because of their relatively large effective size (on the order of 1 µm), the devices have so far been unable to achieve the level of sensitivity required to detect the field generated by the spin magnetic moment (µB) of a single electron. Here we show that nanoscale SQUIDs with diameters as small as 46 nm can be fabricated on the apex of a sharp tip. The nano-SQUIDs have an extremely low flux noise of 50 nΦ0 Hz(-1/2) and a spin sensitivity of down to 0.38 µB Hz(-1/2), which is almost two orders of magnitude better than previous devices. They can also operate over a wide range of magnetic fields, providing a sensitivity of 0.6 µB Hz(-1/2) at 1 T. The unique geometry of our nano-SQUIDs makes them well suited to scanning probe microscopy, and we use the devices to image vortices in a type II superconductor, spaced 120 nm apart, and to record magnetic fields due to alternating currents down to 50 nT.


Assuntos
Microscopia de Força Atômica , Nanoestruturas/química , Semicondutores , Nanoestruturas/ultraestrutura
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