Bragg coherent diffraction imaging of single 20†nm Pt particles at the ID01-EBS beamline of ESRF.

Electronic or catalytic properties can be modified at the nanoscale level. Engineering efficient and specific nanomaterials requires the ability to study their complex structure-property relationships. Here, Bragg coherent diffraction imaging was used to measure the three-dimensional shape and strain of platinum nanoparticles with a diameter smaller than 30 nm, i.e. significantly smaller than any previous study. This was made possible by the realization of the Extremely Brilliant Source of ESRF, The European Synchrotron. This work demonstrates the feasibility of imaging the complex structure of very small particles in three dimensions and paves the way towards the observation of realistic catalytic particles.

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.

We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors.

We report a highly flexible strain sensor which exploits the piezoelectric properties of ultra-long gallium nitride (GaN) wires. Langmuir-Blodgett assembled wires are encapsulated in a dielectric material (parylene-C), which is sandwiched between two planar electrodes in a capacitor-like configuration. Through FEM simulations we show that encapsulating densely aligned conical wires in a properly designed dielectric layer can maximize the amplitude of the generated piezoelectric output potential. According to these considerations we designed and fabricated macroscopic flexible strain sensors (active area: 1.5 cm(2)). The sensor was actuated in three point configuration inducing curvature radii of less than 10 cm and has a typical force sensitivity of 30 mV N(-1).

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy.

We report a systematic experimental and theoretical investigation of core-shell InGaN/GaN single wire light-emitting diodes (LEDs) using electron beam induced current (EBIC) microscopy. The wires were grown by catalyst-free MOVPE and processed into single wire LEDs using electron beam lithography on dispersed wires. The influence of the acceleration voltage and of the applied bias on the EBIC maps was investigated. We show that the EBIC maps provide information both on the minority carrier effects (i.e. on the local p-n junction collection efficiency) and on the majority carrier effects (i.e. the transport efficiency from the excited region toward the contacts). Because of a finite core and shell resistance a non-negligible current redistribution into the p-n junction takes place during the majority carrier transport. A theoretical model for transport in a core-shell wire is developed, allowing to explain the dependence of the EBIC profiles on the experimental parameters (the electron beam acceleration voltage and the bias applied on the device) and on the structural parameters of the wire (core and shell resistance, shunt resistance, etc). Comparison between simulated and experimental profiles provides valuable information concerning the structure inhomogeneities and gives insight into the wire electrical parameters.

Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 µm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.

Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam.

We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200×70 nm2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and intensity. We demonstrate how it is possible to refine the line deformation map at the nanoscale, and follow its evolution as the line relaxes under the influence of the x-ray nanobeam. We find that the strained line flattens itself under irradiation but maintains the same linear strain (ε(zz) unchanged).

Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate.

A detailed characterization of the coherent x-ray wavefront produced by a partially illuminated Fresnel zone plate is presented. We show, by numerical and experimental approaches, how the beam size and the focal depth are strongly influenced by the illumination conditions, while the phase of the focal spot remains constant. These results confirm that the partial illumination can be used for coherent diffraction experiments. Finally, we demonstrate the possibility of reconstructing the complex-valued illumination function by simple measurement of the far field intensity in the specific case of partial illumination.

Metal positioning on silicon surfaces using the etching of buried dislocation arrays.

Large-area Si(001) nanopatterned surfaces obtained by etching dislocation line arrays have been used to drive the positioning of metallic islands. A method combining wafer bonding of (001) silicon on insulator layers and preferential chemical etching allows controlling the periodicity of square trench arrays in the 20-50 nm lateral periodicity range with an accuracy of less than 1 nm and a depth of about 4-5 nm. The interfacial area containing the dislocation line plane can be removed and a single crystal maintaining the morphological patterning can be obtained. It is shown that oxidized or deoxidized silicon nanopatterned surfaces can drive the positioning of Ni, Au and Ag islands for a 20 nm lateral periodicity and that a lateral long range order, directly transferred from the dislocation network, can be obtained in the Ni and Au cases.

Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy.

A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature.

Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement.

We report a luminescence study of the electronic properties of the 2D electron-hole liquid in crystalline Si quantum wells with SiO2 dielectric barriers. The Fermi-Dirac condensation of e-h pairs into a metallic liquid is strongly enhanced by spatial localization. We present experimental evidence for the formation of liquid nanodroplets, with size increasing with e-h pair density. The quantum confined regime is observed for well width below 15 nm. The data are analyzed in a confinement model that takes account of the band-gap renormalization by 2D many-body effects and the increase of the Coulomb interactions due to the dielectric mismatch between the Si well and the SiO2 barriers.

[Indications of radio-pelvimetry at a university hospital and a district general hospital]. / Indications de la radiopelvimétrie en hôpital universitaire et en hôpital de troisième catégorie.

Studies carried out on the phantom have shown how reliable transverse diameter measurements of the pelvis are when carried out by X-Ray scanning pelvimetry compared with conventional X-Ray pelvimetry. The practice of scanning radiopelvimetry (digital radiography) depends on the availability of the machine and of an induced, secondary circuit. The arrival of this new technique makes it necessary for the sake of economy to limit the indications for the investigation. We have studied the indications for the examination in a population of pregnant women in a University Hospital Service as well as pregnant women in a District General Hospital. Since the conditions under which obstetrics are carried out in general hospitals are more precarious, more radiological examinations are carried out in them. Frequently investigations were carried out on primiparous women who have normal pelves. It appeared difficult to lower the number of indications. Digital X-Rays will therefore cost a lot. In university hospitals the indications for carrying out the investigations were studied critically. It seems to be possible to reduce the numbers to 6% of all patients who are delivered. Rationalizing the indications will make it possible to avoid the extra cost which results from carrying out scanning X-Ray pelvimetries more reliably and delivering a lesser dose of X-Rays than ordinary conventional X-Ray pelvimetries deliver.

[Pregnancies with intra-uterine contraceptive device in situ].

PIP: 34 cases of pregnancy with IUD in situ were observed in 715 IUD wearers, i.e. a 4.7% failure. Patients were mostly nulliparous, and between 20-24; IUDs were of several types, both inert and copper; time elapsed from insertion to occurrence of pregnancy went from 6 months to 2 years. Of the 34 pregnancies 3 were tubal; after celioscopy 2 salpingectomies and l salpingostomy were performed. 17 patients requested abortion, while 14 accepted the pregnancy. The IUD was successfully removed in 11 of these patients, while removal was impossible in the other 3 cases. There were in all 7 normal pregnancies and deliveries, and 7 spontaneous abortions. When a pregnancy occurs with IUD in situ it is necessary, after IUD removal, to watch for complications due to infection, for premature delivery, and for hemorrhage during delivery. It has not been proven that pregnancy with IUD in situ can result in malformations of the newborn.^ieng