Spin-polarized resonant surface state in (1 1 1) Sm1-x Gd x Al2, a zero-magnetization ferromagnet.

The electronic structure of (1 1 1) Sm1-x Gd x Al2, a zero-magnetization ferromagnet, is investigated by angle- and spin- resolved photoemission spectroscopy. An intense electron pocket strongly localized around [Formula: see text] and close to the Fermi level is observed and analyzed in detail. Its various characteristics, combined with electronic structure calculations, reveal a resonant surface state of 5d character and Λ1 symmetry, likely built on bulk states developing around L points. It exhibits moreover a low temperature positive spin polarization at the Fermi level, of strong interest for spin-dependent transport properties in Sm1-x Gd x Al2-based spintronic devices.

Evidence for Weakly Correlated Oxygen Holes in the Highest-T_{c} Cuprate Superconductor HgBa_{2}Ca_{2}Cu_{3}O_{8+δ}.

We study the electronic structure of HgBa_{2}Ca_{2}Cu_{3}O_{8+δ} (Hg1223; T_{c}=134 K) using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Resonant valence band PES across the O K edge and Cu L edge identifies correlation satellites originating in O 2p and Cu 3d two-hole final states, respectively. Analyses using the experimental O 2p and Cu 3d partial density of states show quantitatively different on-site Coulomb energy for the Cu site (U_{dd}=6.5±0.5 eV) and O site (U_{pp}=1.0±0.5 eV). Cu_{2}O_{7}-cluster calculations with nonlocal screening explain the Cu 2p core level PES and Cu L-edge XAS spectra, confirm the U_{dd} and U_{pp} values, and provide evidence for the Zhang-Rice singlet state in Hg1223. In contrast to other hole-doped cuprates and 3d-transition metal oxides, the present results indicate weakly correlated oxygen holes in Hg1223.

Ultrafast Atomic Diffusion Inducing a Reversible (2sqrt[3]×2sqrt[3])R30°â†”(sqrt[3]×sqrt[3])R30° Transition on Sn/Si(111)∶B.

Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 °C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.

Understanding the insulating nature of alkali-metal/Si(111):B interfaces.

We have recently revisited the phase diagram of alkali-metal/Si(111):B semiconducting interfaces previously suggested as the possible realization of a Mott-Hubbard insulator on a triangular lattice. The insulating character of the 2√[3] × 2√[3]R30 surface reconstruction observed at the saturation coverage, i.e. 0.5 ML, has been shown to find its origin in a giant alkali-metal-induced vertical distortion. Low energy electron diffraction, photoemission spectroscopy and scanning tunneling microscopy and spectroscopy experiments coupled with linear augmented plane-wave density functional theory calculations allow a full understanding of the k-resolved band structure, explaining both the inhomogeneous charge transfers into an Si-B hybridized surface state and the opening of a band gap larger than 1 eV. Moreover, √[3] × âˆš[3]R30, 3 × 3 and 2√[3] × 2√[3]R30 surface reconstructions observed as a function of coverage may reveal a filling-controlled transition from a half-filled correlated magnetic material to a strongly distorted band insulator at saturation.

Giant alkali-metal-induced lattice relaxation as the driving force of the insulating phase of alkali-metal/Si(111):B.

Ab initio density-functional theory calculations, photoemission spectroscopy (PES), scanning tunneling microscopy, and spectroscopy (STM, STS) have been used to solve the 2sqrt[3]×2sqrt[3]R30 surface reconstruction observed previously by LEED on 0.5 ML K/Si:B. A large K-induced vertical lattice relaxation occurring only for 3/4 of Si adatoms is shown to quantitatively explain both the chemical shift of 1.14 eV and the ratio 1/3 measured on the two distinct B 1s core levels. A gap is observed between valence and conduction surface bands by ARPES and STS which is shown to have mainly a Si-B character. Finally, the calculated STM images agree with our experimental results. This work solves the controversy about the origin of the insulating ground state of alkali-metal/Si(111):B semiconducting interfaces which were believed previously to be related to many-body effects.

Phonon contribution to the lifetime of surface state quasiparticles confined in nanopyramids.

We present a scanning tunneling microscopy investigation of the dynamics of hot electrons and holes in Ag pyramidal nanostructures. The geometry of the nanostructure leads to a strong reduction of the decay mechanism into the bulk states and then to a large reflection coefficient of the surface electronic waves. Therefore, in contrast to quantum corrals and adatom islands which show a dominant lossy scattering contribution to the linewidth, the narrow observed structures in the differential conductivity spectra reveal the expected linewidth minimum at the Fermi energy. The electron-phonon contribution to the lifetime is shown to be dominant, in agreement with previous photoemission measurements.

Surface-state bipolaron formation on a triangular lattice in the sp-type alkali-metal/Si(111) Mott insulator.

We report on new low-energy electron diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy studies of alkali-metal/Si(111) previously established as having a Mott-insulating ground state at surface. The observation of a strong temperature dependent Franck-Condon broadening of the surface band together with the novel sqrt[3] x sqrt[3] --> 2(sqrt[3] x sqrt[3]) charge and lattice ordering below 270 K evidence a surface charge density wave in the strong electron-phonon coupling limit (g approximately 8). Both the adiabatic ratio variant Planck's over 2piomega_{0}/t approximately 0.8 and the effective pairing energy V_{eff} = U - 2gvariant Planck's over 2piomega_{0} approximately -800 meV are consistent with the possible formation of a bipolaronic insulating phase consisting of alternating doubly occupied and unoccupied dangling bonds as expected in the Holstein-Hubbard model.

Charge-order-driven spin-peierls transition in alpha(')-NaxV2O5

We conclude from 23Na and 51V NMR measurements in alpha(')-NaxV2O5 (x = 0.996) (i) a charge-ordering transition starting at T