Microheater Chips with Carbon Nanotube Resistors.

The specific and excellent properties of the low-dimensional nanomaterials have made them promising building blocks to be integrated into microelectromechanical systems with high performances. Here, we present a new microheater chip for in situ TEM, in which a cross-stacked superaligned carbon nanotube (CNT) film resistor is located on a suspended SiNx membrane via van der Waals (vdW) interactions. The CNT microheater has a fast high-temperature response and low power consumption, thanks to the micro/nanostructure of the CNT materials. Moreover, the membrane bulging amplitude is significantly reduced to only ∼100 nm at 800 °C for the vdW interaction between the CNTs and the SiNx membrane. An in situ observation of the Sn melting process is successfully conducted with the assistance of a customized flexible temperature control system. The uniform wafer-scaled CNT films enable a high level of consistency and cost-effective mass production of such chips. The as-developed in situ chips, as well as the related techniques, hold great promise in nanoscience, materials science, and electrochemistry.

Engineering van der Waals Contacts by Interlayer Dipoles.

Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.

Power Generation by Thermal Evaporation Based on a Button Supercapacitor.

Thermal evaporation generators exhibit remarkable output performance, sustainability, and economy and, as a result, have attracted considerable interest as a prospective energy-converting technology for harvesting renewable energy. Here, we investigate power generation induced by water evaporation within a button supercapacitor with a simple sandwich structure. For conventional water evaporation devices, the thermodiffusion direction of hydrated ions driven by the Soret effect is opposite to the migration direction of hydrated ions driven by the streaming potential effect during thermal evaporation, which could reduce the output performance of the device. By tuning the thermodiffusion direction to be consistent with the thermal evaporation direction, our button supercapacitor achieves enhanced output performance as high as 674.4 mV, 70.7 mA, and 4.68 mW cm-2 due to the synergistic mechanism of the streaming potential effect and the Soret effect. Moreover, the system could effectively achieve in situ energy generation and storage owing to the device's ability to act as a supercapacitor. Our findings supply a feasible strategy for the synergistic integration of waste energy sources (low-grade waste heat, etc.) to generate electricity.

Highly Efficient Visible-Blind Ultraviolet Photodetector Based on Scalably Produced Titanium Dioxide Nanowire Arrays.

Here, we report a novel, feasible, and cost-effective method for the preparation of one-dimensional TiO2 nanowire arrays using a super-aligned carbon nanotube film as a template. Pure-anatase-phase TiO2 nanowires were scalably prepared in a suspended manner, and a high-performance ultraviolet (UV) photodetector was realized on a flexible substrate. The large surface area and one-dimensional nanostructure of the TiO2 nanowire array led to a high detectivity (1.35 × 1016 Jones) and an ultrahigh photo gain (2.6 × 104), respectively. A high photoresponsivity of 7.7 × 103 A/W was achieved under 7 µW/cm2 UV (λ = 365 nm) illumination at a 10 V bias voltage, which is much higher than those of commercial UV photodetectors. Additionally, by taking advantage of its anisotropic geometry, we found the TiO2 nanowire array showed polarized photodetection. The concept of using nanomaterial systems shows the potential for realization of nanostructured photodetectors for practical applications.

Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS2.

Scaling up the chemical vapor deposition (CVD) of monolayer transition metal dichalcogenides (TMDCs) is in high demand for practical applications. However, for CVD-grown TMDCs on a large scale, there are many existing factors that result in their poor uniformity. In particular, gas flow, which usually leads to inhomogeneous distributions of precursor concentrations, has yet to be well controlled. In this work, the growth of uniform monolayer MoS2 on a large scale by the delicate control of gas flows of precursors, which is realized by vertically aligning a well-designed perforated carbon nanotube (p-CNT) film face-to-face with the substrate in a horizontal tube furnace, is achieved. The p-CNT film releases gaseous Mo precursor from the solid part and allows S vapor to pass through the hollow part, resulting in uniform distributions of both gas flow rate and precursor concentrations near the substrate. Simulation results further verify that the well-designed p-CNT film guarantees a steady gas flow and a uniform spatial distribution of precursors. Consequently, the as-grown monolayer MoS2 shows quite good uniformity in geometry, density, structure, and electrical properties. This work provides a universal pathway for the synthesis of large-scale uniform monolayer TMDCs, and will advance their applications in high-performance electronic devices.

Reconfigurable Two-Dimensional Air-Gap Barristors.

Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe2, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 104 for the transistor and a rectifying ratio of 105 for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.

Direct Monitoring of Li2 S2 Evolution and Its Influence on the Reversible Capacities of Lithium-Sulfur Batteries.

The polysulfide (PS) dissolution and low conductivity of lithium sulfides (Li2 S) are generally considered the main reasons for limiting the reversible capacity of the lithium-sulfur (Li-S) system. However, as the inevitable intermediate between PSs and Li2 S, lithium disulfide (Li2 S2 ) evolutions are always overlooked. Herein, Li2 S2 evolutions are monitored from the operando measurements on the pouch cell level. Results indicate that Li2 S2 undergoes slow electrochemical reduction and chemical disproportionation simultaneously during the discharging process, leading to further PS dissolution and Li2 S generation without capacity contribution. Compared with the fully oxidized Li2 S, Li2 S2 still residues at the end of the charging state. Therefore, instead of the considered Li2 S and PSs, slow electrochemical conversions and side chemical reactions of Li2 S2 are the determining factors in limiting the sulfur utilization, corresponding to the poor reversible capacity of Li-S batteries.

One-dimensional semimetal contacts to two-dimensional semiconductors.

Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of their contact length still remains a significant challenge because of the sharply raised contact resistance and the deteriorated metal conductivity at nanoscale. Here, we construct a 1D semimetal-2D semiconductor contact by employing single-walled carbon nanotube electrodes, which can push the contact length into the sub-2 nm region. Such 1D-2D heterostructures exhibit smaller van der Waals gaps than the 2D-2D ones, while the Schottky barrier height can be effectively tuned via gate potential to achieve Ohmic contact. We propose a longitudinal transmission line model for analyzing the potential and current distribution of devices in short contact limit, and use it to extract the 1D-2D contact resistivity which is as low as 10-6 Ω·cm2 for the ultra-short contacts. We further demonstrate that the semimetal nanotubes with gate-tunable work function could form good contacts to various 2D semiconductors including MoS2, WS2 and WSe2. The study on 1D semimetal contact provides a basis for further miniaturization of nanoelectronics in the future.

Carbon nanotube electron blackbody and its radiation spectra.

An optical blackbody is an ideal absorber for all incident optical radiation, and the theoretical study of its radiation spectra paved the way for quantum mechanics (Planck's law). Herein, we propose the concept of an electron blackbody, which is a perfect electron absorber as well as an electron emitter with standard energy spectra at different temperatures. Vertically aligned carbon nanotube arrays are electron blackbodies with an electron absorption coefficient of 0.95 for incident energy ranging from 1 keV to 20 keV and standard electron emission spectra that fit well with the free electron gas model. Such a concept might also be generalized to blackbodies for extreme ultraviolet, X-ray, and γ-ray photons as well as neutrons, protons, and other elementary particles.

Graphene Microheater Chips for In Situ TEM.

Low-dimensional materials are bringing significant innovations to in situ TEM characterization. Here a new graphene microheater chip for TEM was developed by stacking graphene on a suspended SiNx membrane as the Joule heating element. It could be heated up to 800 °C within 26.31 ms with a low power consumption of 0.025 mW/1000 µm2. The bulging was only ∼50 nm at 650 °C, which is 2 orders of magnitude smaller than those of conventional MEMS heaters at similar temperatures. The performances benefit from the employment of graphene, since its monolayer structure greatly reduces the heat capacity, and the vdW contact significantly reduces the interfacial interaction. The TEM observation on the Sn melting process verifies its great potential in resolving thermodynamic processes. Moreover, more multifunctional in situ chips could be developed by integrating other stimuli to such chips. This work opens a new frontier for both graphene and in situ characterization techniques.

Ultrafast self-heating synthesis of robust heterogeneous nanocarbides for high current density hydrogen evolution reaction.

Designing cost-effective and high-efficiency catalysts to electrolyze water is an effective way of producing hydrogen. Practical applications require highly active and stable hydrogen evolution reaction catalysts working at high current densities (≥1000 mA cm-2). However, it is challenging to simultaneously enhance the catalytic activity and interface stability of these catalysts. Herein, we report a rapid, energy-saving, and self-heating method to synthesize high-efficiency Mo2C/MoC/carbon nanotube hydrogen evolution reaction catalysts by ultrafast heating and cooling. The experiments and density functional theory calculations reveal that numerous Mo2C/MoC hetero-interfaces offer abundant active sites with a moderate hydrogen adsorption free energy ΔGH* (0.02 eV), and strong chemical bonding between the Mo2C/MoC catalysts and carbon nanotube heater/electrode significantly enhances the mechanical stability owing to instantaneous high temperature. As a result, the Mo2C/MoC/carbon nanotube catalyst achieves low overpotentials of 233 and 255 mV at 1000 and 1500 mA cm-2 in 1 M KOH, respectively, and the overpotential shows only a slight change after working at 1000 mA cm-2 for 14 days, suggesting the excellent activity and stability of the high-current-density hydrogen evolution reaction catalyst. The promising activity, excellent stability, and high productivity of our catalyst can fulfil the demands of hydrogen production in various applications.

Gate-tunable contact-induced Fermi-level shift in semimetal.

Low-dimensional semimetal­semiconductor (Sm-S) van der Waals (vdW) heterostructures have shown their potentials in nanoelectronics and nano-optoelectronics recently. It is an important scientific issue to study the interfacial charge transfer as well as the corresponding Fermi-level shift in Sm-S systems. Here we investigated the gate-tunable contact-induced Fermi-level shift (CIFS) behavior in a semimetal single-walled carbon nanotube (SWCNT) that formed a heterojunction with a transition-metal dichalcogenide (TMD) flake. A resistivity comparison methodology and a Fermi-level catch-up model have been developed to measure and analyze the CIFS, whose value is determined by the resistivity difference between the naked SWCNT segment and the segment in contact with the TMD. Moreover, the relative Fermi-level positions of SWCNT and two-dimensional (2D) semiconductors can be efficiently reflected by the gate-tunable resistivity difference. The work function change of the semimetal, as a result of CIFS, will naturally introduce a modified form of the Schottky­Mott rule, so that a modified Schottky barrier height can be obtained for the Sm-S junction. The methodology and physical model should be useful for low-dimensional reconfigurable nanodevices based on Sm-S building blocks.

Effect of Mg Cation Diffusion Coefficient on Mg Dendrite Formation.

Dendrite formation is an important issue for the metal anode-based battery system. The traditional perception that Mg metal anode does not grow dendrite during operation has been challenged recently. Herein, we investigate the Mg electrodeposition behavior in a 0.3 M all-phenyl-complex (APC) electrolyte and confirm that Mg dendrites are readily formed at high current densities. A semiquantitative model indicates that the Mg-ion concentration on the electrode surface, limited by the intrinsic diffusion coefficient of the Mg cation group, decreases with increasing current density, resulting in an extra concentration polarization. However, Mg deposition at the tip of a protrusion on the electrode surface is hardly affected by the concentration polarization, and thus dendrite growth is more prone to occur at the tips. We find that the addition of LiCl in conventional APC electrolytes can suppress the Mg dendrite formation, mainly as a result of the enhanced Mg cation diffusion coefficient due to the influence of the LiCl additive, rather than the less pronounced electrostatic shield effect provided by Li cations.

Lithium Storage Mechanism and Application of Micron-Sized Lattice-Reversible Binary Intermetallic Compounds as High-Performance Flexible Lithium-Ion Battery Anodes.

A strategy of lattice-reversible binary intermetallic compounds of metallic elements is proposed for applications in flexible lithium-ion battery (LIB) anode with high capacity and cycling stability. First, the use of metallic elements can ensure excellent electronic conductivity and high capacity of the active anode substance. Second, binary intermetallic compounds possess a larger initial lattice volume than metallic monomers, so that the problem of volume expansion can be alleviated. Finally, the design of binary intermetallic compounds with lattice reversibility further improves the cycle stability. In this work, the feasibility of this strategy is verified using an indium antimonide (InSb) system. The volumetric expansion and lithium storage mechanism of InSb are investigated by in situ Raman characterization and theoretical calculations. The active material utilization is significantly improved and the growth of In whiskers is inhibited in the micron-sized ball-milled and carbon coated InSb (bInSb@C) anode, which exhibits a reversible capacity of 733.8 mAh g-1 at 0.2 C, and provides a capacity of 411.5 mAh g-1 after 200 cycles at 3 C with an average Coulombic efficiency of 99.95%. This strategy is validated in pouch cells, illustrating the great potential of lattice-reversible binary intermetallic compounds for use as commercial flexible LIB anodes.

Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications.

As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS2 as the channel and Na+-diffused SiO2 as the ionic gate medium. A large on/off ratio of 106 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.

Toward an Intelligent Synthesis: Monitoring and Intervening in the Catalytic Growth of Carbon Nanotubes.

The bottom-up approach to directly synthesizing low-dimensional materials with outstanding performance has extended the material basis for the next generation integrated circuit industry. All the low-dimensional semiconductors, metals, dielectrics, and their heterojunctions are very promising bricks to build faster and more efficient chips because of their atomically smooth surface and interfaces. The greatest challenge in the synthesis of nanomaterials is how to precisely control the structure, crystalline orientation, defects, dimensions, etc. In past decades, both the methodology and the mechanism of synthesis have been systematically investigated to improve the controllability. However, few studies focused on sensing the synthesis processes in situ and responding to the synthesis immediately. Here, we propose the concept of intelligent synthesis in which the final product can be automatically fine-controlled by a closed loop including in situ monitoring and real-time interventions. As a model system, a high-temperature-tolerant circuit is fabricated on the single-walled carbon nanotube (SWCNT) growth substrate for sensing and responding to the synthesis processes. As a result, either highly pure semiconducting (s-) SWCNT arrays or metallic-semiconducting (m-s) junction arrays with different junction positions is simply synthesized by programming the responding signal. The intelligent synthesis shows much higher efficiency and controllability compared to conventional methods and will lead to the next leap in nanotechnology.

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2.

Low-dimensional semiconductors have shown great potential in switches for their atomically thin geometries and unique properties. It is significant to achieve new tunneling transistors by the efficient stacking methodology with low-dimensional building blocks. Here, we report a one-dimensional (1D)-two-dimensional (2D) mixed-dimensional van der Waals (vdW) heterostructure, which was efficiently fabricated by stacking an individual semiconducting carbon nanotube (CNT) and 2D MoS2. The CNT-MoS2 heterostructure shows specific reconfigurable electrical transport behaviors and can be set as a nn junction, pn diode, and band-to-band tunneling (BTBT) transistor by gate voltage. The transport properties, especially BTBT, could be attributed to the electron transfer from MoS2 to CNT through the ideal vdW interface and the 1D nature of the CNT. The progress suggests a new solution for tunneling transistors by making 1D-2D heterostructures from the rich library of low-dimensional nanomaterials. Furthermore, the reconfigurable functions and nanoscaled junction show that it is prospective to apply CNT-MoS2 heterostructures in future nanoelectronics and nano-optoelectronics.

Boosting the Oxidative Potential of Polyethylene Glycol-Based Polymer Electrolyte to 4.36 V by Spatially Restricting Hydroxyl Groups for High-Voltage Flexible Lithium-Ion Battery Applications.

Cross-linked polyethylene glycol-based resin (c-PEGR) is constructed by a ring-opening reaction of polyethylene glycol diglycidyl ether (PEGDE) with epoxy groups and polyether amine (PEA) with amino groups. By confining the hydroxyl groups with inferior oxidative stability to the c-PEGR backbone, the oxidation potential of the PEG-based polymer material with reduced reactivity is boosted to 4.36 V. The c-PEGR based gel electrolyte shows excellent flexibility, lithium-ion transport, lithium compatibility, and enhanced oxidation stability, and is successfully applied to a 4.35 V lithium cobaltate (LCO)||lithium (Li) battery system. A quasi-static linear scanning voltammetry (QS-LSV) method is proposed for the first time to accurately measure the oxidation potential and electrochemical stability window of materials with low conductivities such as polymers, which possesses the advantages of high accuracy and short test time. This work provides new insights and research techniques for selecting polymer electrolytes for high-voltage flexible lithium-ion batteries (LIBs).

Interfacial Gated Graphene Photodetector with Broadband Response.

A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that in the graphene/SiO2/Si photodetector. We found that this improvement was due to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. The photoresponsivity of the graphene/HfO2/Si photodetector is as high as 45.8 A W-1. Germanium and amorphous MoS2 (a-MoS2) were used to prepare graphene/HfO2/Ge and graphene/HfO2/a-MoS2 photodetectors, further demonstrating the high efficiency of the interfacial gating mechanism for photodetection. Because of the 0.196 eV bandgap of a-MoS2, which was verified in our previous report, the graphene/HfO2/a-MoS2 photodetector realized ultrabroadband photodetection over the range from 473 nm (visible) to 2712 nm (mid-infrared) at room temperature with photoresponsivity as high as 5.36 A W-1 and response time as fast as 68 µs, which represent significant improvements from the corresponding properties of the pure a-MoS2 photodetectors in our previous report and are comparable with those of state-of-the-art broadband photodetectors. By taking full advantage of the interfacial gating mechanism, a fast response, high photoresponsivity and ultrabroadband photodetection were achieved simultaneously. These interfacial gated graphene photodetectors also offer simple fabrication and full semiconductor process compatibility. The advantages described here indicate that the proposed photodetectors have significant potential for use in electronic and optoelectronic applications and offer a new path toward the development of ultrabroadband photodetectors.

Efficient polysulfide trapping in lithium-sulfur batteries using ultrathin and flexible BaTiO3/graphene oxide/carbon nanotube layers.

Ultrathin and flexible layers containing BaTiO3 (BTO) nanoparticles, graphene oxide (GO) sheets, and carbon nanotube (CNT) films (BTO/GO@CNT) are used to trap solvated polysulfides and alleviate the shuttle effect in lithium-sulfur (Li-S) batteries. In the functional layers, the CNT films build a conductive framework, and the GO sheets form a support membrane for the uniform dispersion of BTO nanoparticles. BTO nanoparticles without ferroelectricity (nfBTO) can trap polysulfides more effectively by chemical interaction compared to BTO nanoparticles with ferroelectricity (fBTO). A Li-S cell with the nfBTO/GO@CNT functional layer exhibits a reversible capacity of 824.5 mA h g-1 over 100 cycles at 0.2 C. At a high sulfur loading of 5.49 mg cm-2, an electrode with the functional layer shows an areal capacity of 5.15 mA h cm-2 at 0.1 C, demonstrating the nfBTO/GO@CNT functional layer's potential in developing high-performance Li-S batteries.