Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O.

This work reports on the properties of heterojunctions consisting of n-type Ga2O3 layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu2O counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for Ga2O3/Cu2O and 220 mV for Ga2O3/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed Ga2O3 and Cu2O, with small conduction band offset, and the large offsets anticipated for both energy bands in the case of Ga2O3/NiO. Large differences in the ideality factors between the two types of heterojunctions were observed, suggestive of distinctive properties of the heterointerface. Further, it is shown that the interface between the high-temperature-deposited Ga2O3 and the ITO contact does not impede electron transport, opening new possibilities for the design of solar cell and optoelectronic device architectures.

Tunability of silicon clathrate film properties by controlled guest-occupation of their cages.

Type I and type II silicon clathrates are guest-host structures made of silicon polyhedral cages large enough to contain atoms that can be either inserted or evacuated with only a slight volume change of the structure. This feature is of interest not only for batteries or storage applications but also for tuning the properties of the silicon clathrate films. The thermal decomposition process can be tuned to obtain Na8Si46 and Na2

Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins.

Silicon vacancy (VSi) color centers in bulk SiC are excellent electron spin qubits. However, most spin based quantum devices require shallow spin qubits, whose dynamics is often different from that of bulk ones. Here, we demonstrate (i) a new method for creating shallow VSi (V2) spin qubits below the SiC surface by low energy ion implantation through a sacrificial SiO2 layer, (ii) that these shallow VSi are dipolar coupled to an electronic spin bath, analysed by Hahn echo decay, dynamical decoupling (DD), and optically pumped pulsed electron-electron double resonance experiments (OP-PELDOR), (iii) that their coherence time increases with cooling of the spin bath (from 55 µs at 297 K to 107 µs at 28 K), and that it can be further extended to 220 µs at 100 K by DD, thus demonstrating their relevance for PELDOR-based quantum sensors and processors. Finally, (iv) external spin sensing is demonstrated by the shift of VSi magnetic resonance lines induced by the dipolar stray magnetic field of a nearby ferrimagnetic YIG film.

From Mono- to Polynuclear Coordination Complexes with a 2,2'-Bipyrimidine-4,4'-dicarboxylate Ligand.

The coordination properties of the ligand 2,2'-bipyrimidine-4,4'-dicarboxylic acid (H2bpd) with lanthanide(III) ions (Ln = Eu, Tb, or Lu) were investigated. The syntheses of the H2bpd ligand and its salts, [K2(bpd)(H2O)2] (1) and [(AlkNH)Lu(bpd)2] (Alk = Et, Hex, or en), are described. In the presence of LnCl3 salts (Ln = Lu, Eu, or Tb), the formation of [Ln(bpd)2]- and [Ln(bpd)(H2O)x]+ species was assessed by 1H nuclear magnetic resonance (NMR), spectrophotometry, and spectrofluorometric titrations in aqueous solution. The solid state structure of 1, [K(H2O)2][Lu(bpd)2] (2), and [(Et3NH)Lu(bpd)2] (3) could be determined by X-ray diffraction, showing the ligand to act as a tetradentate unit with formation of three five-membered chelate rings around the central Ln(III). With the aim of building polynuclear assemblies, the coordination between [Lu(bdp)2]- and [Lu(tta)3(H2O)] units (tta = thenoyltrifluoroacetylacetonate) was also investigated. In methanol, 1H NMR titration experiments revealed the formation of complex mixtures from which two new species could be identified, [Lu2(bpd)(tta)4] (4) and H[Lu(bpd)(tta)2] (5), as confirmed by their solid state structure analysis. Using highly lipophilic cations in chloroform, the octametallic complex [enH]4[Lu8(bpd)4(tta)18] (6) could be isolated and its X-ray structure determined.

Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling.

Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferroelectric-based solar cells.

Nanopillar spin filter tunnel junctions with manganite barriers.

The potential of a manganite ferromagnetic insulator in the field of spin-filtering has been demonstrated. For this, an ultrathin film of Sm0.75Sr0.25MnO3 is integrated as a barrier in an epitaxial oxide nanopillar tunnel junction and a high spin polarization of up to 75% at 5 K has been achieved. A large zero-bias anomaly observed in the dynamic conductance at low temperatures is explained in terms of the Kondo scattering model. In addition, a decrease in spin polarization at low bias and hysteretic magneto-resistance at low temperatures are reported. The results open up new possibilities for spin-electronics and suggest exploration of other manganites-based materials for the room temperature spin-filter applications.

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe0.5Mn0.5O3.

Highly strained films of BiFe0.5Mn0.5O3 (BFMO) grown at very low rates by pulsed laser deposition were demonstrated to exhibit both ferrimagnetism and ferroelectricity at room temperature and above. Magnetisation measurements demonstrated ferrimagnetism (TC ∼ 600K), with a room temperature saturation moment (MS ) of up to 90 emu/cc (∼ 0.58 µB /f.u) on high quality (001) SrTiO3. X-ray magnetic circular dichroism showed that the ferrimagnetism arose from antiferromagnetically coupled Fe3+ and Mn3+. While scanning transmission electron microscope studies showed there was no long range ordering of Fe and Mn, the magnetic properties were found to be strongly dependent on the strain state in the films. The magnetism is explained to arise from one of three possible mechanisms with Bi polarization playing a key role. A signature of room temperature ferroelectricity in the films was measured by piezoresponse force microscopy and was confirmed using angular dark field scanning transmission electron microscopy. The demonstration of strain induced, high temperature multiferroism is a promising development for future spintronic and memory applications at room temperature and above.

Electric-field control of ferromagnetism in a nanocomposite via a ZnO phase.

La2CoMnO6 (LcmO)-ZnO nanocomposite thin films grown on SrTiO3 and Nb-SrTiO3 (001) are investigated. The films grow in the form of self-assembled epitaxial vertically aligned structures. We show that, at 120 K, an electric field applied across the nanocomposite reversibly alters magnetic properties of LcmO. The effect is consistent with charge-mediated coupling between magnetism and an electric field that can be induced by changes in ion valences.

Carrier density modulation by structural distortions at modified LaAlO3/SrTiO3 interfaces.

In order to study the fundamental conduction mechanism of LaAlO3/SrTiO3 (LAO/STO) interfaces, heterostructures were modified with a single unit cell interface layer of either an isovalent titanate ATiO3 (A = Ca, Sr, Sn, Ba) or a rare earth modified Sr0.5RE0.5TiO3 (RE = La, Nd, Sm, Dy) between the LAO and the STO. A strong coupling between the lattice strain induced in the LAO layer by the interfacial layers and the sheet carrier density in the STO substrate is observed. The observed crystal distortion of the LAO is large and it is suggested that it couples into the sub-surface STO, causing oxygen octahedral rotation and deformation. We propose that the 'structural reconstruction' which occurs in the STO surface as a result of the stress in the LAO is the enabling trigger for two-dimensional conduction at the LAO/STO interface by locally changing the band structure and releasing trapped carriers.

Electrical and magnetic properties of La(0.35)Sr(0.65)Ti(1-x)Fe(x)O(3) thin films.

We report that the La(0.35)Sr(0.65)Ti(1-x)Fe(x)O(3) system forms a solid solution within the composition range 0≤x≤0.5 and a room temperature magnetic semiconductor phase exists at x = 0.20. This system shows an anomalous Hall effect and is ferromagnetic with a large moment per Fe ion. The results show that the strong La doping provides sufficient carriers to the system to maintain carrier-mediated ferromagnetism for low Fe doping. Furthermore, the presence of ferromagnetism within this phase space raises the possibility that the conduction, and hence the magnetism, could be electronically controlled.