Enhancing sensitivity in atomic force microscopy for planar tip-on-chip probes.

We present a new approach to tuning-fork-based atomic force microscopy for utilizing advanced "tip-on-chip" probes with high sensitivity and broad compatibility. Usually, such chip-like probes with a size reaching 2 × 2 mm2 drastically perturb the oscillation of the tuning fork, resulting in poor performance in its intrinsic force sensing. Therefore, restoring initial oscillatory characteristics is necessary for regaining high sensitivity. To this end, we developed a new approach consisting of three basic steps: tuning-fork rebalancing, revamping holder-sensor fixation, and electrode reconfiguration. Mass rebalancing allows the tuning fork to recover the frequency and regain high Q-factor values up to 104 in air and up to 4 × 104 in ultra-high vacuum conditions. The floating-like holder-fixation using soft wires significantly reduces energy dissipation from the mounting elements. Combined with the soft wires, reconfigured electrodes provide electrical access to the chip-like probe without intervening in the force-sensing signal. Finally, our easy-to-implement approach allows converting the atomic force microscopy tip from a passive tool to a dedicated microdevice with extended functionality.

Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide.

The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer.