Low temperature photoconductivity of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs).

We report on the low-temperature photoconductive properties of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs) synthesized using the chemical vapor transport method. Photoconductivity measurements show that these FETs display room temperature photo-responsivities of ∼7 mAW-1 when illuminated with a laser of wavelength λ = 658 nm with a power of 38 nW. The photo-responsivities of these FETs showed orders of magnitude improvement (up to ∼1.1 AW-1 with external quantum efficiencies reaching as high as ∼188%) upon application of a gate voltage (V G = -60 V). A temperature dependent (100 K < T < 300 K) photoconductivity study reveals a weak temperature dependence of responsivity for these WSe2 phototransistors. We demonstrate that it is possible to obtain stable photo-responsivities of ∼0.76 ± 0.2 AW-1 (with applied V G = -60 V), at low temperatures in these FETs. These findings indicate the possibility of developing WSe2-based FETs for highly robust, efficient, and swift photodetectors with a potential for optoelectronic applications over a broad range of temperatures.

Fractional photo-current dependence of graphene quantum dots prepared from carbon nanotubes.

We report on the photo-conductivity studies of chemically synthesized graphene quantum dots (GQDs) of average size 12 nm obtained by the oxidative acid treatment of MWCNTs. The dependence of photocurrent Iph (Iph = Iill - Idark) on the laser intensity P under a wide range of laser intensities (5 mW ≤ P ≤ 60 mW) shows a fractional power dependence of Iph on light intensity. The temperature dependence (300 K < T < 50 K) of Iph observed in thin films of these GQDs indicates that in the higher temperature region (T > ∼100 K), as the temperature increases, the number of thermally generated carriers increase resulting in increased Iph. At sufficiently low temperatures (T ≤ 100 K), a constant Iph is observed, indicating a constant photo-carrier density. Such a behavior is typically observed in many photoactive disordered semiconductors, which are often used in a variety of applications. We believe that the investigations presented here will enhance our understanding of the photocurrent generation phenomenon in chemically obtained GQDs.