Electrical properties of disordered films of van der Waals semiconductor WS2 on paper.

One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 µm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process.

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors.

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

MoS2 Photoelectrodes for Hydrogen Production: Tuning the S-Vacancy Content in Highly Homogeneous Ultrathin Nanocrystals.

Tuning the electrocatalytic properties of MoS2 layers can be achieved through different paths, such as reducing their thickness, creating edges in the MoS2 flakes, and introducing S-vacancies. We combine these three approaches by growing MoS2 electrodes by using a special salt-assisted chemical vapor deposition (CVD) method. This procedure allows the growth of ultrathin MoS2 nanocrystals (1-3 layers thick and a few nanometers wide), as evidenced by atomic force microscopy and scanning tunneling microscopy. This morphology of the MoS2 layers at the nanoscale induces some specific features in the Raman and photoluminescence spectra compared to exfoliated or microcrystalline MoS2 layers. Moreover, the S-vacancy content in the layers can be tuned during CVD growth by using Ar/H2 mixtures as a carrier gas. Detailed optical microtransmittance and microreflectance spectroscopies, micro-Raman, and X-ray photoelectron spectroscopy measurements with sub-millimeter spatial resolution show that the obtained samples present an excellent homogeneity over areas in the cm2 range. The electrochemical and photoelectrochemical properties of these MoS2 layers were investigated using electrodes with relatively large areas (0.8 cm2). The prepared MoS2 cathodes show outstanding Faradaic efficiencies as well as long-term stability in acidic solutions. In addition, we demonstrate that there is an optimal number of S-vacancies to improve the electrochemical and photoelectrochemical performances of MoS2.

Room-temperature synthesis of 2D-Ti3C2Tx nano-sheets by organic base treatment.

The growing demand for improved electrochemical performance in energy storage systems has stimulated research into advanced two-dimensional (2D) materials for electrodes. In this work, we obtain a layered MXene compound by exfoliating a titanium aluminum carbide precursor using tetramethylammonium hydroxide (TMAOH) ions in a full room temperature process followed by manual shaking. The hexagonal crystal structure and composition of the layered materials are characterized using different techniques. X-Ray diffraction shows the formation of 2D nano-sheets before and after the TMAOH treatment via its characteristic (002) diffraction peak, bringing to light an increase in the interlayer spacing after treatment. Scanning electron microscopy images confirm the layered morphology, whose composition is determined by energy dispersive x-ray analysis for the bulk material and by x-ray photoelectron spectroscopy for the surface of the obtained compounds. This study demonstrates a promising route to enhance delamination of this MXene 2D material in a low-cost room-temperature approach.

Tuning the Electronic Response of Metallic Graphene by Potassium Doping.

Electron doping of graphene has been extensively studied on graphene-supported surfaces, where the metallicity is influenced by the substrate. Herewith we propose potassium adsorption on free-standing nanoporous graphene, thus eluding any effect due to the substrate. We monitor the electron migration in the π* downward-shifted conduction band. In this rigid band shift, we correlate the spectral density of the π* state in the upper Dirac cone with the associated plasmon, blue-shifted with increasing K dose, as deduced by electron energy loss spectroscopy. These results are confirmed by the Dirac plasmon activated by the C 1s emitted electrons, thanks to spatially resolved photoemission. This crosscheck constitutes a reference on the correlation between the electronic π* states in the conduction band and the Dirac plasmon evolution upon in situ electron doping of fully free-standing graphene.

Spectromicroscopy Study of Induced Defects in Ion-Bombarded Highly Aligned Carbon Nanotubes.

Highly aligned multi-wall carbon nanotubes were investigated with scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) before and after bombardment performed using noble gas ions of different masses (argon, neon and helium), in an ultra-high-vacuum (UHV) environment. Ion irradiation leads to change in morphology, deformation of the carbon (C) honeycomb lattice and different structural defects in multi-wall carbon nanotubes. One of the major effects is the production of bond distortions, as determined by micro-Raman and micro-X-ray photoelectron spectroscopy. We observe an increase in sp3 distorted bonds at higher binding energy with respect to the expected sp2 associated signal of the carbon 1s core level, and increase in dangling bonds. Furthermore, the surface damage as determined by the X-ray photoelectron spectroscopy carbon 1s core level is equivalent upon bombarding with ions of different masses, while the impact and density of defects in the lattice of the MWCNTs as determined by micro-Raman are dependent on the bombarding ion mass; heavier for helium ions, lighter for argon ions. These results on the controlled increase in sp3 distorted bonds, as created on the multi-wall carbon nanotubes, open new functionalization prospects to improve and increase atomic hydrogen uptake on ion-bombarded multi-wall carbon nanotubes.

Enhanced Field-Effect Control of Single-Layer WS2 Optical Features by hBN Full Encapsulation.

The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric fields can easily penetrate in a 2D semiconductor and thus modulate their charge density and their properties. In literature, the field effect is routinely used to fabricate atomically thin field-effect transistors based on 2D semiconductors. Apart from the tuning of the electrical transport, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper, we present some recent experiments on the field-effect control of the optical and excitonic properties of the monolayer WS2. Using the deterministic transfer of van der Waals materials, we fabricate planar single-layer WS2 devices contacted by a gold electrode and partially sandwiched between two insulating hexagonal boron nitride (hBN) flakes. Thanks to the planar nature of the device, we can optically access both the hBN encapsulated and the unencapsulated WS2 regions and compare the field-effect control of the exciton population in the two cases. We find that the encapsulation strongly increases the range of tunability of the optical emission of WS2, allowing us to tune the photoluminescence emission from excitons-dominated to trions-dominated. We also discuss how the full encapsulation of WS2 with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors.

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing.

Paper offers a low-cost and widely available substrate for electronics. It possesses alternative characteristics to silicon, as it shows low density and high flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-prepare perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green region, by increasing the bromide content on MAPb(I1-xBrx)3 perovskite alloys. The devices show a fast and efficient response. The best performances are observed for pure I and Br perovskite compositions, with a maximum responsivity of ∼400 mA W-1 on the MAPbBr3 device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offers for the development of low-cost, biodegradable and easy-to-prepare devices.

Homogeneous Spatial Distribution of Deuterium Chemisorbed on Free-Standing Graphene.

Atomic deuterium (D) adsorption on free-standing nanoporous graphene obtained by ultra-high vacuum D2 molecular cracking reveals a homogeneous distribution all over the nanoporous graphene sample, as deduced by ultra-high vacuum Raman spectroscopy combined with core-level photoemission spectroscopy. Raman microscopy unveils the presence of bonding distortion, from the signal associated to the planar sp2 configuration of graphene toward the sp3 tetrahedral structure of graphane. The establishment of D-C sp3 hybrid bonds is also clearly determined by high-resolution X-ray photoelectron spectroscopy and spatially correlated to the Auger spectroscopy signal. This work shows that the low-energy molecular cracking of D2 in an ultra-high vacuum is an efficient strategy for obtaining high-quality semiconducting graphane with homogeneous uptake of deuterium atoms, as confirmed by this combined optical and electronic spectro-microscopy study wholly carried out in ultra-high vacuum conditions.

Paper-based broadband flexible photodetectors with van der Waals materials.

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405-810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS3 (1.50 mA/W) and MoS2 (1.13 µA/W) PDs, the TiS3-MoS2 heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron-hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS3-MoS2 heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS2 PD demonstrated very high flexibility under applied strain, but TiS3 based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.

Strongly Anisotropic Strain-Tunability of Excitons in Exfoliated ZrSe3.

The effect of uniaxial strain on the band structure of ZrSe3 , a semiconducting material with a marked in-plane structural anisotropy, is studied. By using a modified three-point bending test apparatus, thin ZrSe3 flakes are subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra show excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ≈60-95 meV %-1 , while along the a-axis, the shift only reaches ≈0-15 meV %-1 . Ab initio calculations are conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe3 , exhibiting a remarkable agreement with the experimental results.

Integrating superconducting van der Waals materials on paper substrates.

Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific community working on paper-based electronics because of the combination of high electrical performance and mechanical flexibility. Up to now, different methods have been developed to pattern conducting, semiconducting and insulating van der Waals materials on paper but the integration of superconductors remains elusive. Here, the deposition of NbSe2, an illustrative van der Waals superconductor, on standard copy paper is demonstrated. The deposited NbSe2 films on paper display superconducting properties (e.g. observation of Meissner effect and resistance drop to zero-resistance state when cooled down below its critical temperature) similar to those of bulk NbSe2.

Fiber-coupled light-emitting diodes (LEDs) as safe and convenient light sources for the characterization of optoelectronic devices.

Optoelectronic device characterization requires to probe the electrical transport changes upon illumination with light of different incident powers, wavelengths, and modulation frequencies. This task is typically performed using laser-based or lamp + monochromator-based light sources, that result complex to use and costly to implement. Here, we describe the use of multimode fiber-coupled light-emitting diodes (LEDs) as a simple, low-cost alternative to more conventional light sources, and demonstrate their capabilities by extracting the main figures of merit of optoelectronic devices based on monolayer MoS 2, i.e. optical absorption edge, photoresponsivity, response time and detectivity. The described light sources represent an excellent alternative for performing optoelectronic characterization experiments on a limited budget.

Drawing WS2 thermal sensors on paper substrates.

Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperature dependence, as expected for a semiconductor material in which charge transport is due to thermally activated carriers. This strong temperature dependence makes the paper supported WS2 devices extremely sensitive to small changes in temperature. This exquisite thermal sensitivity, and their fast response times to sudden temperature changes, is exploited thereby demonstrating the usability of a WS2-on-paper thermal sensor in a respiration monitoring device.

Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain.

The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The bandgap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ≈200 meV %-1. The effect of biaxial strain on the electrical properties of the InSe devices is further characterized. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ≈450-1000, ≈5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe bandgap also translates in a strain-induced redshift of the spectral response of the InSe photodetectors with ΔE cut-off ≈173 meV at a rate of ≈360 meV %-1 of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

MoS2-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite.

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similar to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, which can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodetectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR) range. We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

Microheater Actuators as a Versatile Platform for Strain Engineering in 2D Materials.

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64%, and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 µm/°C, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.

Direct Transformation of Crystalline MoO3 into Few-Layers MoS2.

We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300 × 300 µm2, 2-4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2.

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.

Symmetry Breakdown in Franckeite: Spontaneous Strain, Rippling, and Interlayer Moiré.

Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational, and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.