RESUMO
We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.
RESUMO
Passive Q switching of a two-frequency Er3+-Yb3+:glass laser at 1.55 microm with a new Co2+:La(x)Sr(1 - x)Mg(x - y)Co(y)Al(12 - x)O19 crystal as a saturable absorber is demonstrated. We show that, with an extended cavity setup, the beat frequency between the orthogonally polarized laser eigenstates is continuously tunable by adjustment of the retardance of an intracavity birefringence. A similarly built microchip laser emits two-frequency pulses of 6-ns duration with a beat frequency of as much as 19 GHz. Moreover, two-frequency pulses at 777 nm are obtained by second-harmonic generation in a periodically poled lithium niobate crystal. Such pulses can be useful for applications such as Doppler lidar radar.
