Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating.

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors.

Electric-double-layer (EDL) gating can induce large capacitance densities (∼1-10 µF cm-2) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (VG) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied VG without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which VG is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 1013 cm-2 for electrons and 1.4 × 1013 cm-2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO4, is decreased from 1 µm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm-1 µm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.

A ready-to-use, thermoresponsive, and extended-release delivery system for the paranasal sinuses.

A drug delivery system for the paranasal sinuses consisting of a freeze-dried thermoresponsive hydrogel with degradable microspheres, called FD-TEMPS (Freeze Dried-Thermogel, Extended-release Microsphere-based delivery to the Paranasal Sinuses), was developed. Glass transition temperatures (Tg') of the maximally freeze concentrated solutions consisting of poly(N-isopropylacrylamide) (pNIPAAm) and polyethylene glycol (PEG) were determined by differential scanning calorimetry, which informed optimization of the thermogel formulation. By replacing low molecular weight (MW) PEG (200 Da) with a higher MW PEG (2000 Da), the resulting freeze-dried gel exhibited a brittle texture, porous structure, and low residual moisture (< 3% measured by thermal gravimetric analysis). When combined with poly(lactic-co-glycolic acid) microspheres (PLGA MSs) and freeze dried, the complete system (FD-TEMPS) exhibited enhanced shelf-stability. Specifically, the smooth, spherical morphology of the MSs and initial release kinetics were maintained following 6 weeks of storage under ambient conditions. Furthermore, FD-TEMPS remained in place after application to a simulated mucosal surface, suggesting that it could be more uniformly distributed along the sinonasal mucosa in vivo. Freeze drying enables this delivery system to be stored as a ready-to-use product for better ease of clinical translation without compromising the thermoresponsive or sustained release characteristics that would enable local delivery of therapeutics to the sinonasal mucosa.

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal.

Two-dimensional materials are an emerging class of materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining increasing attention for use in field-effect transistors. Here, we report a photoluminescence switching effect based on single-layer WSe2 transistors. Dual gates are used to tune the photoluminescence intensity. In particular, a side-gate is utilized to control the location of ions within a solid polymer electrolyte to form an electric double layer at the interface of electrolyte and WSe2 and induce a vertical electric field. Additionally, a back-gate is used to apply a second vertical electric field. An on-off ratio of the light emission up to 90 was observed under constant pump light intensity. In addition, a blue shift of the photoluminescence line up to 36 meV was observed. We attribute this blue shift to the decrease of exciton binding energy due to the change of nonlinear in-plane dielectric constant and use it to determine the third-order off-diagonal susceptibility χ(3) = 3.50 × 10-19 m2/V2.

Combining Hyperbranched and Linear Structures in Solid Polymer Electrolytes to Enhance Mechanical Properties and Room-Temperature Ion Transport.

Polyethylene oxide (PEO)-based polymers are commonly studied for use as a solid polymer electrolyte for rechargeable Li-ion batteries; however, simultaneously achieving sufficient mechanical integrity and ionic conductivity has been a challenge. To address this problem, a customized polymer architecture is demonstrated wherein PEO bottle-brush arms are hyperbranched into a star architecture and then functionalized with end-grafted, linear PEO chains. The hierarchical architecture is designed to minimize crystallinity and therefore enhance ion transport via hyperbranching, while simultaneously addressing the need for mechanical integrity via the grafting of long, PEO chains (M n = 10,000). The polymers are doped with lithium bis(trifluoromethane) sulfonimide (LiTFSI), creating hierarchically hyperbranched (HB) solid polymer electrolytes. Compared to electrolytes prepared with linear PEO of equivalent molecular weight, the HB PEO electrolytes increase the room temperature ionic conductivity from ∼2.5 × 10-6 to 2.5 × 10-5 S/cm. The conductivity increases by an additional 50% by increasing the block length of the linear PEO in the bottle brush arms from M n = 1,000 to 2,000. The mechanical properties are improved by end-grafting linear PEO (M n = 10,000) onto the terminal groups of the HB PEO bottle-brush. Specifically, the Young's modulus increases by two orders of magnitude to a level comparable to commercial PEO films, while only reducing the conductivity by 50% below the HB electrolyte without grafted PEO. This study addresses the trade-off between ion conductivity and mechanical properties, and shows that while significant improvements can be made to the mechanical properties with hierarchical grafting of long, linear chains, only modest gains are made in the room temperature conductivity.

Electric-double-layer p-i-n junctions in WSe2.

While p-n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant over more than a decade in current. In this paper, electric double layer p-i-n junctions in WSe2 are shown with substantially constant ideality factors (2-3) over more than 3 orders of magnitude in current. These lateral junctions use the solid polymer, polyethylene oxide: cesium perchlorate (PEO:CsClO4), to induce degenerate electron and hole carrier densities at the device contacts to form the junction. These high carrier densities aid in reducing the contact resistance and enable the exponential current dependence on voltage to be measured at higher currents than prior reports. Transport measurements of these WSe2 p-i-n homojunctions in combination with COMSOL multiphysics simulations are used to quantify the ion distributions, the semiconductor charge distributions, and the simulated band diagram of these junctions, to allow applications to be more clearly considered.

Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect Measurements.

Electric double layer (EDL) gating using a single-ion conductor is compared to a dual-ion conductor using both finite element modeling and Hall-effect measurements. Modified Nernst-Planck Poisson (mNPP) equations are used to calculate the ion density per unit area in a parallel plate capacitor geometry with a bulk ion concentration of 215 ≤ cbulk ≤ 1782 mol/m3. With electrodes of equal size at a 2 V potential difference, the EDL ion density of the single-ion conductor is ∼7 × 1013 ions/cm2, which is approximately 50% of the ion density induced in the dual-ion conductor. However, this difference is reduced to 8% when the electrode at which the cationic EDL forms is 10 times smaller than the counter electrode. Thus, for a field-effect transistor gated by a single-ion conductor, it is especially important to have a large gate-to-channel size ratio to achieve strong ion doping. The modeled ion densities are validated by Hall-effect measurements on graphene Hall bars gated by a polyethylene oxide (PEO)-based single-ion conductor. The sheet carrier density, nS, is ∼2 × 1013 cm-2 at Vg = 2 V, which is 3.5 times smaller than the predicted value and has the same order of magnitude as the ns measured for a PEO-based, dual-ion conductor on the same graphene. The numerical modeling results can be approximated by a simple analysis of capacitors in series, where the EDLs are modeled as capacitors with thickness estimated by the sum of the Debye screening length and the Stern layer. The series of capacitor estimate agrees with the numerical modeling of the dual-ion conductor to within 10% and the single-ion conductor to within 30% from 0.25 to 2 V (cbulk = 925 mol/m3); similar agreement is observed in the concentration range of 353-1650 mol/m3 for both single- and dual-ion conductors.

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions.

A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature < Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.

Silver Nanofilament Formation Dynamics in a Polymer-Ionic Liquid Thin Film by Direct-Write.

Silver nanofilament formation dynamics are reported for an ionic liquid (IL)-filled solid polymer electrolyte prepared by a direct-write process using a conductive atomic force microscope (C-AFM). Filaments are electrochemically formed at hundreds of xy locations on a ~40 nm thick polymer electrolyte, polyethylene glycol diacrylate (PEGDA)/[BMIM]PF6. Although the formation time generally decreases with increasing bias from 0.7 to 3.0 V, an unexpected non-monotonic maximum is observed ~ 2.0 V. At voltages approaching this region of inverted kinetics, IL electric double layers (EDLs) becomes detectable; thus, the increased nanofilament formation time can be attributed to electric field screening which hinders silver electro-migration and deposition. Scanning electron microscopy confirms that nanofilaments formed in this inverted region have significantly more lateral and diffuse features. Time-dependent formation currents reveal two types of nanofilament growth dynamics: abrupt, where the resistance decreases sharply over as little as a few ms, and gradual where it decreases more slowly over hundreds of ms. Whether the resistance change is abrupt or gradual depends on the extent to which the EDL screens the electric field. Tuning the formation time and growth dynamics using an IL opens the range of accessible resistance states, which is useful for neuromorphic applications.

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory.

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe2 channel or an h-BN capping layer to achieve "1" or "0", respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ∼1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ∼2.5 × 1012 cm-2, and an On/Off ratio exceeding 104 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). When the write time approaches 1 ms, the On/Off ratio remains >102, showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

Electric Double-Layer Gating of Two-Dimensional Field-Effect Transistors Using a Single-Ion Conductor.

Electric double-layer (EDL) gating using a custom-synthesized polyester single-ion conductor (PE400-Li) is demonstrated on two-dimensional (2D) crystals for the first time. The electronic properties of graphene and MoTe2 field-effect transistors (FETs) gated with the single-ion conductor are directly compared to a poly(ethylene oxide) dual-ion conductor (PEO:CsClO4). The anions in the single-ion conductor are covalently bound to the backbone of the polymer, leaving only the cations free to form an EDL at the negative electrode and a corresponding cationic depletion layer at the positive electrode. Because the cations are mobile in both the single- and dual-ion conductors, a similar enhancement of the n-branch is observed in both graphene and MoTe2. Specifically, the single-ion conductor decreases the subthreshold swing in the n-branch of the bare MoTe2 FET from 5000 to 250 mV/dec and increases the current density and on/off ratio by two orders of magnitude. However, the single-ion conductor suppressed the p-branch in both the graphene and the MoTe2 FETs, and finite element modeling of ion transport shows that this result is unique to single-ion conductor gating in combination with an asymmetric gate/channel geometry. Both the experiments and modeling suggest that single-ion conductor-gated FETs can achieve sheet densities up to 1014 cm-2, which corresponds to a charge density that would theoretically be sufficient to induce several percent strain in monolayer 2D crystals and potentially induce a semiconductor-to-metal phase transition in MoTe2.

Nanopore-Templated Silver Nanoparticle Arrays Photopolymerized in Zero-Mode Waveguides.

In situ fabrication of nanostructures within a solid-polymer electrolyte confined to subwavelength-diameter nanoapertures is a promising approach for producing nanomaterials for nanophotonic and chemical sensing applications. The solid-polymer electrolyte can be patterned by lithographic photopolymerization of poly(ethylene glycol) diacrylate (PEGDA)-based silver cation (Ag+)-containing polyelectrolyte. Here, we present a new method for fabricating nanopore-templated Ag nanoparticle (AgNP) arrays by in situ photopolymerization using a zero-mode waveguide (ZMW) array to simultaneously template embedded AgNPs and control the spatial distribution of the optical field used for photopolymerization. The approach starts with an array of nanopores fabricated by sequential layer-by-layer deposition and focused ion beam milling. These structures have an optically transparent bottom, allowing access of the optical radiation to the attoliter-volume ZMW region to photopolymerize a PEGDA monomer solution containing AgNPs and Ag+. The electric field intensity distribution is calculated for various ZMW optical cladding layer thicknesses using finite-element simulations, closely following the light-blocking efficiency of the optical cladding layer. The fidelity of the polyelectrolyte nanopillar pattern was optimized with respect to experimental conditions, including the presence or absence of Ag+ and AgNPs and the concentrations of PEGDA and Ag+. The self-templated approach for photopatterning high-resolution photolabile polyelectrolyte nanostructures directly within a ZMW array could lead to a new class of metamaterials formed by embedding metal nanoparticles within a dielectric in a well-defined spatial array.

Considerations for Utilizing Sodium Chloride in Epitaxial Molybdenum Disulfide.

The utilization of alkali salts, such as NaCl and KI, has enabled the successful growth of large single domain and fully coalesced polycrystalline two-dimensional (2D) transition-metal dichalcogenide layers. However, the impact of alkali salts on photonic and electronic properties is not fully established. In this work, we report alkali-free epitaxy of MoS2 on sapphire and benchmark the properties against alkali-assisted growth of MoS2. This study demonstrates that although NaCl can dramatically increase the domain size of monolayer MoS2 by 20 times, it can also induce strong optical and electronic heterogeneities in as-grown, large-scale films. This work elucidates that utilization of NaCl can lead to variation in growth rates, loss of epitaxy, and high density of nanoscale MoS2 particles (4 ± 0.7/µm2). Such phenomena suggest that alkali atoms play an important role in Mo and S adatom mobility and strongly influence the 2D/sapphire interface during growth. Compared to alkali-free synthesis under the same growth conditions, MoS2 growth assisted by NaCl results in >1% tensile strain in as-grown domains, which reduces photoluminescence by ∼20× and degrades transistor performance.

Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors.

Electric double layer (EDL) dynamics in graphene field-effect transistors (FETs) gated with polyethylene oxide (PEO)-based electrolytes are studied by molecular dynamics (MD) simulations from picoseconds to nanoseconds and experimentally from microseconds to milliseconds. Under an applied field of approximately mV/nm, EDL formation on graphene FETs gated with PEO:CsClO4 occurs on the timescale of microseconds at room temperature and strengthens within 1 ms to a sheet carrier density of nS ≈ 1013 cm-2. Stronger EDLs (i.e., larger nS) are induced experimentally by pulsing with applied voltages exceeding the electrochemical window of the electrolyte; electrochemistry is avoided using short pulses of a few milliseconds. Dynamics on picosecond to nanosecond timescales are accessed using MD simulations of PEO:LiClO4 between graphene electrodes with field strengths of hundreds of mV/nm which is 100× larger than experiment. At 100 mV/nm, EDL formation initiates in sub-nanoseconds achieving charge densities up to 6 × 1013 cm-2 within 3 nanoseconds. The modeling shows that under sufficiently high electric fields, EDLs with densities ∼1013 cm-2 can form within a nanosecond, which is a timescale relevant for high-performance electronics such as EDL transistors (EDLTs). Moreover, the combination of experiment and modeling shows that the timescale for EDL formation ( nS = 1013 to 1014 cm-2) can be tuned by 9 orders of magnitude by adjusting the field strength by only 3 orders of magnitude.

Direct-Write Formation and Dissolution of Silver Nanofilaments in Ionic Liquid-Polymer Electrolyte Composites.

Materials with reconfigurable optical properties are candidates for applications such as optical cloaking and wearable sensors. One approach to fabricate these materials is to use external fields to form and dissolve nanoscale conductive channels in well-defined locations within a polymer. In this study, conductive atomic force microscopy is used to electrochemically form and dissolve nanoscale conductive filaments at spatially distinct points in a polyethylene glycol diacrylate (PEGDA)-based electrolyte blended with varying amounts of ionic liquid (IL) and silver salt. The fastest filament formation and dissolution times are detected in a PEGDA/IL composite that has the largest modulus (several GPa) and the highest polymer crystal fraction. This is unexpected because filament formation and dissolution events are controlled by ion transport, which is typically faster within amorphous regions where polymer mobility is high. Filament kinetics in primarily amorphous and crystalline regions are measured, and two different mechanisms are observed. The formation time distributions show a power-law dependence in the crystalline regions, attributable to hopping-based ion transport, while amorphous regions show a normal distribution. The results indicate that the timescale of filament formation/dissolution is determined by local structure, and suggest that structure could be used to tune the optical properties of the film.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 µA·µm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Increasing the Room-Temperature Electric Double Layer Retention Time in Two-Dimensional Crystal FETs.

Poly(vinyl alcohol) (PVA) and LiClO4, a solid polymer electrolyte with a glass transition temperature (Tg) of 80 °C, is used to electrostatically gate graphene field-effect transistors. The ions in PVA:LiClO4 are drifted into place by field-effect at T > Tg, providing n- or p-type doping, and when the device is cooled to room temperature, the polymer mobility and, hence ion mobility are arrested and the electric double layer (EDL) is "locked" into place in the absence of a gate bias. Unlike other electrolytes used to gate two-dimensional devices for which the Tg, and therefore the "locking" temperature, is well below room temperature, the electrolyte demonstrated in this work provides a route to achieve room-temperature EDL stability. Specifically, a 6 orders of magnitude increase in the room temperature EDL retention time is demonstrated over the commonly used electrolyte, poly(ethylene oxide) (PEO) and LiClO4. Hall measurements confirm that large sheet carrier densities can be achieved with PVA:LiClO4 at top gate programming voltages of ±2 V (-6.3 ± 0.03 × 1013 cm-2 for electrons and 1.6 ± 0.3 × 1014 cm-2 for holes). Transient drain current measurements show that at least 75% of the EDL is retained after more than 4 h at room temperature. Unlike PEO-based electrolytes, PVA:LiClO4 is compatible with the chemicals used in standard photolithographic processes enabling the direct deposition of patterned, metal contacts on the surface of the electrolyte. A thermal instability in the electrolyte is detected by both I-V measurements and differential scanning calorimetry, and FTIR measurements suggest that thermally catalyzed cross-linking may be driving phase separation between the polymer and the salt. Nevertheless, this work highlights how the relationship between polymer and ion mobility can be exploited to tune the state retention time and the charge carrier density of a 2D crystal transistor.

Monolayer Solid-State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors.

The electrostatic gating of graphene field-effect transistors is demonstrated using a monolayer electrolyte. The electrolyte, cobalt crown ether phthalocyanine (CoCrPc) and LiClO4, is deposited as a monolayer on the graphene channel, essentially creating an additional two-dimensional layer on top of graphene. The crown ethers on the CoCrPc solvate lithium ions and the ion location is modulated by a backgate without requiring liquid solvent. Ions dope the channel by inducing image charges; the doping level (i.e., induced charge density) can be modulated by the backgate bias with the extent of the surface potential change being controlled by the magnitude and polarity of the backgate bias. With a crown ether to Li+ ratio of 5:1, programming tests for which the backgate is held at -VBG shift the Dirac point by ∼15 V, corresponding to a sheet carrier density on the order of 1012 cm-2. This charge carrier density agrees with the packing density of monolayer CoCrPc on graphene that would be expected with one Li+ for every five crown ethers (at the maximum possible Li+ concentration, 1013 cm-2 is predicted). The crown ethers provide two stable states for the Li+: one near the graphene channel (low-resistance state) and one ∼5 Å away from the channel (high-resistance state). Initial state retention measurements indicate that the two states can be maintained for at least 30 min (maximum time monitored), which is 106 times longer than polymer-based electrolytes at room temperature, with at least a 250 Ω µm difference between the channel resistance in the high- and low-resistance states.

Addressable Direct-Write Nanoscale Filament Formation and Dissolution by Nanoparticle-Mediated Bipolar Electrochemistry.

Nanoscale conductive filaments, usually associated with resistive memory or memristor technology, may also be used for chemical sensing and nanophotonic applications; however, realistic implementation of the technology requires precise knowledge of the conditions that control the formation and dissolution of filaments. Here we describe and characterize an addressable direct-write nanoelectrochemical approach to achieve repeatable formation/dissolution of Ag filaments across a ∼100 nm poly(ethylene oxide) (PEO) film containing either Ag+ alone or Ag+ together with 50 nm Ag-nanoparticles acting as bipolar electrodes. Using a conductive AFM tip, formation occurs when the PEO film is subjected to a forward bias, and dissolution occurs under reverse bias. Formation-dissolution kinetics were studied for three film compositions: Ag|PEO-Ag+, Ag|poly(ethylene glycol) monolayer-PEO-Ag+, and Ag|poly(ethylene glycol) monolayer-PEO-Ag+/Ag-nanoparticle. Statistical analysis shows that the distribution of formation times exhibits Gaussian behavior, and the fastest average initial formation time occurs for the Ag|PEO-Ag+ system. In contrast, formation in the presence of Ag nanoparticles likely proceeds by a noncontact bipolar electrochemical mechanism, exhibiting the slowest initial filament formation. Dissolution times are log-normal for all three systems, and repeated reformation of filaments from previously formed structures is characterized by rapid regrowth. The direct-write bipolar electrochemical deposition/dissolution strategy developed here presents an approach to reconfigurable, noncontact in situ wiring of nanoparticle arrays-thereby enabling applications where actively controlled connectivity of nanoparticle arrays is used to manipulate nanoelectronic and nanophotonic behavior. The system further allows for facile manipulation of experimental conditions while simultaneously characterizing surface conditions and filament formation/dissolution kinetics.

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.

To deposit an ultrathin dielectric onto WSe2, monolayer titanyl phthalocyanine (TiOPc) is deposited by molecular beam epitaxy as a seed layer for atomic layer deposition (ALD) of Al2O3 on WSe2. TiOPc molecules are arranged in a flat monolayer with 4-fold symmetry as measured by scanning tunneling microscopy. ALD pulses of trimethyl aluminum and H2O nucleate on the TiOPc, resulting in a uniform deposition of Al2O3, as confirmed by atomic force microscopy and cross-sectional transmission electron microscopy. The field-effect transistors (FETs) formed using this process have a leakage current of 0.046 pA/µm(2) at 1 V gate bias with 3.0 nm equivalent oxide thickness, which is a lower leakage current than prior reports. The n-branch of the FET yielded a subthreshold swing of 80 mV/decade.