Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion.

Ordinary materials can transform into novel phases at extraordinary high pressure and temperature. The recently developed method of ultrashort laser-induced confined microexplosions initiates a non-equilibrium disordered plasma state. Ultra-high quenching rates overcome kinetic barriers to the formation of new metastable phases, which are preserved in the surrounding pristine crystal for subsequent exploitation. Here we demonstrate that confined microexplosions in silicon produce several metastable end phases. Comparison with an ab initio random structure search reveals six energetically competitive potential phases, four tetragonal and two monoclinic structures. We show the presence of bt8 and st12, which have been predicted theoretically previously, but have not been observed in nature or in laboratory experiments. In addition, the presence of the as yet unidentified silicon phase, Si-VIII and two of our other predicted tetragonal phases are highly likely within laser-affected zones. These findings may pave the way for new materials with novel and exotic properties.

Small atomic displacements recorded in bismuth by the optical reflectivity of femtosecond laser-pulse excitations.

Subtle atomic motion in a Bi crystal excited by a 35 fs-laser pulse has been recovered from the transient reflectivity of an optical probe measured with an accuracy of 10(-5). Analysis shows that a novel effect reported here-an initial negative drop in reflectivity-relates to a delicate coherent displacement of atoms by the polarization force during the pulse. We also show that reflectivity oscillations with a frequency coinciding with that of cold Bi are related to optical phonons excited by the electron temperature gradient through electron-phonon coupling.

Laser-induced microexplosion confined in the bulk of a sapphire crystal: evidence of multimegabar pressures.

Extremely high pressures (approximately 10 TPa) and temperatures (5 x 10(5) K) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over 10(14) W/cm2 converting material within the absorbing volume of approximately 0.2 microm3 into plasma in a few fs. A pressure of approximately 10 TPa, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of 10(18) K/s can, thus, be studied in a well-controlled laboratory environment.

Precision ablation of dental enamel using a subpicosecond pulsed laser.

In this study we report the use of ultra-short-pulsed near-infrared lasers for precision laser ablation of freshly extracted human teeth. The laser wavelength was approximately 800nm, with pulsewidths of 95 and 150fs, and pulse repetition rates of 1kHz. The laser beam was focused to an approximate diameter of 50microm and was scanned over the tooth surface. The rise in the intrapulpal temperature was monitored by embedded thermocouples, and was shown to remain below 5 degrees C when the tooth was air-cooled during laser treatment. The surface preparation of the ablated teeth, observed by optical and electron microscopy, showed no apparent cracking or heat effects, and the hardness and Raman spectra of the laser-treated enamel were not distinguishable from those of native enamel. This study indicates the potential for ultra-short-pulsed lasers to effect precision ablation of dental enamel.

Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation.

We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an alpha-Ga/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R?0.55 , which is typical for alpha-Ga , to R?0.8 , which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100ns-10 mus , depending strongly on the background temperature of the Ga mirror and the laser fluence.