Cell penetrating peptide decorated magnetic porous silicon nanorods for glioblastoma therapy and imaging.

Glioblastoma multiforme (GBM) is the most malignant primary brain tumor of the central nervous system. Despite advances in therapy, it remains largely untreatable, in part due to the low permeability of chemotherapeutic drugs across the blood-brain barrier (BBB) which significantly compromises their effectiveness. To circumvent the lack of drug efficiency, we designed multifunctional nanoparticles based on porous silicon. Herein, we propose an innovative synthesis technique for porous silicon nanorods (pSiNRs) with three-dimensional (3D) shape-controlled nanostructure. In order to achieve an efficient administration and improved treatment against GBM cells, a porous silicon nanoplatform is designed with magnetic guidance, fluorescence tracking and a cell-penetrating peptide (CPP). A NeuroFilament Light (NFL) subunit derived 24 amino acid tubulin binding site peptide called NFL-TBS.40-63 peptide or NFL-peptide was reported to preferentially target human GBM cells compared to healthy cells. Motivated by this approach, we investigated the use of magnetic-pSiNRs covered with superparamagnetic iron oxide nanoparticles (SPIONs) for magnetic guidance, then decorated with the NFL-peptide to facilitate targeting and enhance internalization into human GBM cells. Unexpectedly, under confocal microscope imaging, the internalized multifunctional nanoparticles in GBM cells induce a remarkable exaltation of green fluorescence instead of the red native fluorescence from the dye due to a possible Förster resonance energy transfer (FRET). In addition, we showed that the uptake of NFL-peptide decorated magnetic-pSiNRs was preferential towards human GBM cells. This study presents the fabrication of magnetic-pSiNRs decorated with the NFL-peptide, which act as a remarkable candidate to treat brain tumors. This is supported by in vitro results and confocal imaging.

Time-gated luminescence imaging of positively charged poly-l-lysine-coated highly microporous silicon nanoparticles in living Hydra polyp.

The development of non-toxic fluorescent agents alternative to heavy metal-based semiconductor quantum dots represents a relevant topic in biomedical research and in particular in the bioimaging field. Herein, highly luminescent Si─H terminal microporous silicon nanoparticles with µs-lived photoemission are chemically modified with a two step process and successfully used as label-free probes for in vivo time-gated luminescence imaging. In this context, Hydra vulgaris is used as model organism for in vivo study and validity assessment. The application of time gating allows to pursue an effective sorting of the signals, getting rid of the most common sources of noise that are fast-decay tissue autofluorescence and excitation scattering within the tissue. Indeed, an enhancement by a factor ~ 20 in the image signal-to-noise ratio can be estimated.

Impregnation of High-Magnetization FeCo Nanoparticles in Mesoporous Silicon: An Experimental Approach.

This paper deals with the synthesis of high-magnetization porous silicon-based nanocomposites. Using well-controlled organometallic synthesis of ferromagnetic FeCo nanoparticles, the impregnation of mesoporous silicon has been performed by immersion of porous silicon in a colloidal solution. The technique was optimized by controlling the temperature, the immersion duration, and the solvent nature. The characterization of the nanocomposites showed a homogeneous filling of the pores and a high magnetization of 135 emu/cm3. Such composites present a great interest for many applications including data storage, medical instrumentations, catalysis, or electronics.

In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy.

In this paper, we study the thermal oxidation kinetics of mesoporous silicon layers, synthesized by electrochemical anodization, from 260 °C up to 1100 °C. A specific apparatus is employed to heat the mesoporous samples in air and to record at the same time their infrared emittance. Based on Bruggeman effective medium approximation, an optical model is set up to realistically approximate the dielectric function of the porous material with an emphasis on the surface chemistry and oxide content. A transition temperature of 600 °C is evidenced from data processing which gives evidence of two oxidation mechanisms with distinct kinetics. Between 260-600 °C, the oxidation is surface-limited with kinetics dependent on the hydrogen desorption rate. However, above 600 °C, the oxide growth is limited by oxygen diffusion through the existing oxide layer. A parabolic law is employed to fit the oxidation rate and to extract the high-temperature activation energy (EA = 1.5 eV). A precise control of the oxide growth can thus be achieved.

Non-oxidized porous silicon-based power AC switch peripheries.

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

RF performances of inductors integrated on localized p+-type porous silicon regions.

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.

Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation.

The aim of this work is to determine the thermal conductivity of mesoporous silicon (PoSi) by fitting the experimental results with simulated ones. The electrothermal response (resistance versus applied current) of differently designed test lines integrated onto PoSi/silicon substrates and the bulk were compared to the simulations. The PoSi thermal conductivity was the single parameter used to fit the experimental results. The obtained thermal conductivity values were compared with those determined from Raman scattering measurements, and a good agreement between both methods was found. This methodology can be used to easily determine the thermal conductivity value for various porous silicon morphologies.

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces.

In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the 'chevron shaped' pore density with depth. In the case of the C face, a columnar morphology is observed, and the etch rate is twice greater than for the one for the Si face. We've also observed the evolution of the potential for a fixed applied current density. Finally, some wafer defects induced by polishing are clearly revealed at the sample surfaces even for very short etching times.

Copper-selective electrochemical filling of macropore arrays for through-silicon via applications.

In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, 'almost' through-silicon macropores were locally opened by a backside photolithographic process followed by anisotropic etching. The 450 × 450-µm² opened areas were then selectively filled with copper by a potentiostatic electrochemical deposition. Using this process, high density conductive via (4.5 × 105 cm-²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined.

Plasma-deposited fluoropolymer film mask for local porous silicon formation.

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates.

Study of thick microporous silicon layer from highly resistive silicon.

Porous silicon (PS) formed from low doped silicon is reported to be a promising material for power electronic applications for electrical insulating. However, post-anodization steps on porous silicon, such as photolithography or metallization require the implementation of smooth porous silicon surfaces. In the present work, we use low doped (30-50 Omegacm) p-type Si. Our experiments allowed us the implementation of structures with pore dimensions extending from some micrometers (macroporous PS) to few nanometers (microporous Si). The use of a particular solution based on HF-H2O and acetic acid permitted to achieve microporous Si structures. The evaluation of the porosity versus the thickness is found to be a pertinent parameter to study the structure integrity of the so formed microporous silicon. Thus, layers with a thickness up to 400 microm have been implemented with a porosity of 50%.