RESUMO
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point solvent with the silicon and germanium precursors injected as liquids sequentially. We show that these heterostructures can be formed using either indium or tin as the catalyst seeds which form in situ during the thermal anneal. There is a direct correlation between growth time and segment length allowing good control over the wire composition. The formation of axial heterostructures of Si-Ge-Si1-xGex nanowires using a triple injection is further discussed with the alloyed Si1-xGex third component formed due to residual Ge precursor and its greater reactivity in comparison to silicon. It was found that the degree of tapering at each hetero-interface varied with both the catalyst type and composition of the NW. The report shows the versatility of the solvent vapour growth system for the formation of complex Si-Ge NW heterostructures.
RESUMO
Solid-state sensor nanostructured materials (SnO2, ZnO and CeO2) have been prepared by pyrolysis of macromolecular complexes: PSP-co-4-PVP x (SnCl2)n, PSP-co-4-PVP x (ZnCl2)n and PSP-co-4-PVP x (Ce(NO3)3)n in several molar ratios under air at 800 degrees C. The as-prepared nanostructured SnO2 exhibits morphologies and particle sizes which are dependent upon the molar ratio of the SnCl2:PSP-co-4-PVP. When a larger weight fraction of the inorganic salt in the precursor mixture is used (1:10 > 1:5 > 1.1) larger crystalline crystals are found for each oxide. For ZnO and CeO2 agglomerates of morphologies from the respective hexagonal and cubic structures were observed with typical sizes of 30-50 nm in both cases for a precursor mixture ratio of 1:1.