RESUMO
Diffractive mask-aligner lithography allows printing structures that have a sub-micrometer resolution by using non-contact mode. For such a purpose, masks are often designed to operate with monochromatic linearly polarized light, which is obtained by placing a spectral filter and a polarizer in the beam path. We propose here a mask design that includes a wire-grid polarizer (WGP) on the top side of a photo-mask and a diffractive element on the bottom one to print a 350 nm period grating by using a classical mask-aligner in proximity exposure mode. Linearly polarizing locally an unpolarized incident beam is only possible by using a WGP on the top side of the mask. This configuration opens the possibility to use different linear polarization orientation on a single mask and allows to print high resolution structures with different orientation within one exposure.
RESUMO
Two new processes for the atomic layer deposition of copper indium sulfide (CuInS2) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl3) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS2 stoechiometry was only achieved by depositing In2S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)2, In(acac)3) allows the direct deposition of CuInS2 at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.
