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Correction for 'Fine tuning of ferromagnet/antiferromagnet interface magnetic anisotropy for field-free switching of antiferromagnetic spins' by M. Slezak et al., Nanoscale, 2020, DOI: 10.1039/d0nr04193a.
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We show that in a uniform thickness NiO(111)/Fe(110) epitaxial bilayer system, at given temperature near 300 K, two magnetic states with orthogonal spin orientations can be stabilized in antiferromagnetic NiO. Field-free, reversible switching between these two antiferromagnetic states is demonstrated. The observed phenomena arise from the unique combination of precisely tuned interface magnetic anisotropy, thermal hysteresis of spin reorientation transition and interfacial ferromagnet/antiferromagnet exchange coupling. The possibility of field-free switching between two magnetic states in an antiferromagnet is fundamentally interesting and can lead to new ideas in heat assisted magnetic recording technology.
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X-ray photoemission electron microscopy, one of the most successful imaging tools at synchrotrons, is known to have limitations related to the application of external fields and to the short electron mean free path. In order to overcome such issues, we adapt an existing XPEEM instrument to simultaneously perform coherent x-ray scattering measurements in reflectivity mode, thus adding a complementary method to XPEEM. Photon-in photon-out x-ray scattering provides the sensitivity to buried interfaces as well as the possibility to work under external fields, which is challenging when using charged particles for imaging. XPEEM, in turn, greatly alleviates the difficulties associated with the reconstruction methods used in coherent diffraction imaging. The combination of the two methods is demonstrated for an artifical spin-ice lattice showing both chemical and magnetic contrast.
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This corrects the article DOI: 10.1103/PhysRevLett.123.217201.
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While the usual approach to tailor the behavior of condensed matter and nanosized systems is the choice of material or finite-size or interfacial effects, topology alone may be the key. In the context of the motion of magnetic domain walls (DWs), known to suffer from dynamic instabilities with low mobilities, we report unprecedented velocities >600 m/s for DWs driven by spin-transfer torques in cylindrical nanowires made of a standard ferromagnetic material. The reason is the robust stabilization of a DW type with a specific topology by the Årsted field associated with the current. This opens the route to the realization of predicted new physics, such as the strong coupling of DWs with spin waves above >600 m/s.
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We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO3(1 1 0) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO3/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic fields, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that the SMR of the AFM and canting magnetization components cancel out. Below 50 K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin systems of non-collinear AFMs.
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The lack of large-area synthesis processes on substrates compatible with industry requirements has been one of the major hurdles facing the integration of 2D materials in mainstream technologies. This is particularly the case for the recently discovered monoelemental group V 2D materials which can only be produced by exfoliation or growth on exotic substrates. Herein, to overcome this limitation, we demonstrate a scalable method to synthesize antimonene on germanium substrates using solid-source molecular beam epitaxy. This emerging 2D material has been attracting a great deal of attention due to its high environmental stability and its outstanding optical and electronic properties. In situ low energy electron microscopy allowed the real time investigation and optimization of the 2D growth. Theoretical calculations combined with atomic-scale microscopic and spectroscopic measurements demonstrated that the grown antimonene sheets are of high crystalline quality, interact weakly with germanium, exhibit semimetallic characteristics, and remain stable under ambient conditions. This achievement paves the way for the integration of antimonene in innovative nanoscale and quantum technologies compatible with the current semiconductor manufacturing.