Parity-Protected Superconductor-Semiconductor Qubit.

Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2φ) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime.

Spectroscopic Evidence of the Aharonov-Casher Effect in a Cooper Pair Box.

We observe the effect of the Aharonov-Casher (AC) interference on the spectrum of a superconducting system containing a symmetric Cooper pair box (CPB) and a large inductance. By varying the charge n_{g} induced on the CPB island, we observe oscillations of the device spectrum with the period Δn_{g}=2e. These oscillations are attributed to the charge-controlled AC interference between the fluxon tunneling processes in the CPB Josephson junctions. The measured phase and charge dependences of the frequencies of the |0⟩→|1⟩ and |0⟩→|2⟩ transitions are in good agreement with our numerical simulations. Almost complete suppression of the single fluxon tunneling due to destructive interference is observed for the charge n_{g}=e(2n+1). The CPB in this regime enables fluxon pairing, which can be used for the development of parity-protected superconducting qubits.

Quantum superinductor with tunable nonlinearity.

We report on the realization of a superinductor, a dissipationless element whose microwave impedance greatly exceeds the resistance quantum R(Q). The design of the superinductor, implemented as a ladder of nanoscale Josephson junctions, enables tuning of the inductance and its nonlinearity by a weak magnetic field. The Rabi decay time of the superinductor-based qubit exceeds 1 µs. The high kinetic inductance and strong nonlinearity offer new types of functionality, including the development of qubits protected from both flux and charge noises, fault tolerant quantum computing, and high-impedance isolation for electrical current standards based on Bloch oscillations.

Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers.

Self-assembled monolayers (SAMs) are widely used in a variety of emerging applications for surface modification of metals and oxides. Here, we demonstrate a new type of molecular self-assembly: the growth of organosilane SAMs at the surface of organic semiconductors. Remarkably, SAM growth results in a pronounced increase of the surface conductivity of organic materials, which can be very large for SAMs with a strong electron-withdrawing ability. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10(-5) S per square, two orders of magnitude greater than the maximum conductivity typically achieved in organic field-effect transistors. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors with molecular self-assembly. In particular, SAM-induced conductivity shows sensitivity to different molecular species present in the environment, which makes this system very attractive for chemical sensing applications.

Light quasiparticles dominate electronic transport in molecular crystal field-effect transistors.

We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids.

Microwave-induced dephasing in one-dimensional metal wires.

We report on the effect of monochromatic microwave (MW) radiation on the weak-localization corrections to the conductivity of quasi-one-dimensional silver wires. Because of the improved electron cooling in the wires, the MW-induced dephasing is observed without a concomitant overheating of electrons over wide ranges of the MW power P(MW) and frequency f. The observed dependences of the conductivity and MW-induced dephasing rate on P(MW) and f are in agreement with the theory by Altshuler, Aronov, and Khmelnitsky [Solid State Commun. 39, 619 (1981)]. Our results suggest that in the low-temperature experiments with 1D wires, saturation of the temperature dependence of the dephasing time can be caused by an MW electromagnetic noise with a sub-pW power.

Hall effect in the accumulation layers on the surface of organic semiconductors.

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.

Photoinduced charge transfer across the interface between organic molecular crystals and polymers.

Photoinduced charge transfer of positive and negative charges across the interface between a single-crystal organic semiconductor and a polymeric insulator is observed in electric field-effect experiments. Immobilization of the transferred charge by deep traps in the polymer results in a shift of the threshold of field-induced conductivity along the semiconductor-polymer interface, which allows for direct measurements of the charge transfer rate. The transfer occurs when the photon energy exceeds the absorption edge of the semiconductor. The direction of the transverse electric field at the interface determines the sign of the transferred charge; the transfer rate is controlled by the field magnitude and light intensity.

Intrinsic charge transport on the surface of organic semiconductors.

The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.

Interaction effects in conductivity of Si inversion layers at intermediate temperatures.

We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m* and g* factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B(axially)) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T).

Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers.

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.