RESUMO
The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e-) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The electride state was confirmed by conductivity measurements and EPR using a characteristic signal from F+-like centers, but the peak at 186 cm-1, corresponding to an electride with free electrons, was not observed explicitly in the Raman spectra. The temperature dependence of current-voltage characteristics in states with low and high resistance (LRS and HRS) has been studied. In the LRS state, the temperature dependence of the current has a non-Arrhenius character and is described by the Hurd quantum tunnelling model with a Berthelot temperature of 262 K, while in the HRS state, it can be described in terms of the Arrhenius model. In the latter case, the existence of two conduction regions, "impurity" and "intrinsic", with corresponding activation energies of 25.5 and 40.6 meV, was assumed. The difference in conduction mechanisms is most likely associated with a change in the concentration of free electrons.
RESUMO
We studied the formation process of a mayenite structure from hydroxide precursors in different gas media. According to X-ray diffraction data, this method allows a well-crystallized mayenite (Ca12Al14O33 or C12A7) phase to be obtained at low (500-900 °C) temperatures with an insignificant impurity of CaO. It was shown that the lattice parameters for C12A7 obtained in an inert atmosphere (Ar) were lower when compared with similar samples in the air. These results can be explained by the different levels of oxygen nonstoichiometry in the resulting phase. We noted that sintering and crystallization of mayenite proceeds at lower temperatures in Ar than in the air medium. We found the presence of donor and acceptor active sites on the surface of mayenite, which was detected by the spin probe method. The specific (per unit surface) concentration of such sites (2.5 × 1016 m-2 and 1.5 × 1015 m-2 for donor and acceptor sites, respectively) is comparable to that of γ-Al2O3, which is traditionally used as catalyst support. This allows it to be used in adsorption and catalytic technologies, taking into account its high specific surface area (~30-50 m2/g at a low synthesis temperature).
RESUMO
In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.