Survival of Floquet-Bloch States in the Presence of Scattering.

Floquet theory has spawned many exciting possibilities for electronic structure control with light, with enormous potential for future applications. The experimental demonstration in solids, however, remains largely unrealized. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering-activated by electronic excitations-prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena.

Direct evidence for efficient ultrafast charge separation in epitaxial WS2/graphene heterostructures.

We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS2 and graphene. This heterostructure combines the benefits of a direct-gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS2, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS2 layer. The resulting charge-separated transient state is found to have a lifetime of ∼1 ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS2 and graphene bands as revealed by high-resolution ARPES. In combination with spin-selective optical excitation, the investigated WS2/graphene heterostructure might provide a platform for efficient optical spin injection into graphene.

Electronic-structural dynamics in graphene.

We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared ([Formula: see text]), we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optical amplifiers. At lower pump photon energies ([Formula: see text]), for which interband absorption is not possible in doped samples, we find evidence for free carrier absorption. In addition, when mid-infrared pulses are made resonant with an infrared-active in-plane phonon of bilayer graphene ([Formula: see text]), a transient enhancement of the electron-phonon coupling constant is observed, providing interesting perspective for experiments that report light-enhanced superconductivity in doped fullerites in which a similar lattice mode was excited. All the studies reviewed here have important implications for applications of graphene in optoelectronic devices and for the dynamical engineering of electronic properties with light.

Phonon-pump extreme-ultraviolet-photoemission probe in graphene: anomalous heating of Dirac carriers by lattice deformation.

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E_{1u} lattice vibration at 6.3 µm. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme-ultraviolet (XUV) pulses, we measure the response of the Dirac electrons near the K point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E_{1u} vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.

Population inversion in monolayer and bilayer graphene.

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ∼130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

Non-equilibrium Dirac carrier dynamics in graphene investigated with time- and angle-resolved photoemission spectroscopy.

We have used time- and angle-resolved photoemission spectroscopy (tr-ARPES) to assess the influence of many-body interactions on the Dirac carrier dynamics in graphene. From the energy-dependence of the measured scattering rates we directly determine the imaginary part of the self-energy, visualizing the existence of a relaxation bottleneck associated with electron-phonon coupling. A comparison with static line widths obtained by high-resolution ARPES indicates that the dynamics of photo-excited carriers in graphene are solely determined by the equilibrium self-energy. Furthermore, the subtle interplay of different many-body interactions in graphene may allow for carrier multiplication, where the absorption of a single photon generates more than one electron-hole pair via impact ionization. We find that, after photo-excitation, the number of carriers in the conduction band along the ΓK-direction keeps increasing for about 40 fs after the pump pulse is gone. A definite proof of carrier multiplication in graphene, however, requires a more systematic study, carefully taking into account the contribution of momentum relaxation on the measured rise time.

Snapshots of non-equilibrium Dirac carrier distributions in graphene.

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all of these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy- and momentum-dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme-ultraviolet pulses to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. Whereas excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find any indication of carrier multiplication, questioning the applicability of graphene for light harvesting.

Graphene sublattice symmetry and isospin determined by circular dichroism in angle-resolved photoemission spectroscopy.

The Dirac-like electronic structure of graphene originates from the equivalence of the two basis atoms in the honeycomb lattice. We show that the characteristic parameters of the initial state wave function (sublattice symmetry and isospin) can be determined using angle-resolved photoemission spectroscopy (ARPES) with circularly polarized synchrotron radiation. At a photon energy of hν = 52 eV, transition matrix element effects can be neglected allowing us to determine sublattice symmetry and isospin with high accuracy using a simple theoretical model.

Atomic hole doping of graphene.

The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point is shifted into the unoccupied states. Atomic doping presents excellent perspectives for large scale production.