RESUMO
The electrical performance of doped semiconducting polymers is strongly governed by processing methods and underlying thin-film microstructure. We report on the influence of different doping methods (solution versus vapor) on the thermoelectric power factor (PF) of PBTTT molecularly p-doped with F n TCNQ (n = 2 or 4). The vapor-doped films have more than two orders of magnitude higher electronic conductivity (σ) relative to solution-doped films. On the basis of resonant soft x-ray scattering, vapor-doped samples are shown to have a large orientational correlation length (OCL) (that is, length scale of aligned backbones) that correlates to a high apparent charge carrier mobility (µ). The Seebeck coefficient (α) is largely independent of OCL. This reveals that, unlike σ, leveraging strategies to improve µ have a smaller impact on α. Our best-performing sample with the largest OCL, vapor-doped PBTTT:F4TCNQ thin film, has a σ of 670 S/cm and an α of 42 µV/K, which translates to a large PF of 120 µW m-1 K-2. In addition, despite the unfavorable offset for charge transfer, doping by F2TCNQ also leads to a large PF of 70 µW m-1 K-2, which reveals the potential utility of weak molecular dopants. Overall, our work introduces important general processing guidelines for the continued development of doped semiconducting polymers for thermoelectrics.
RESUMO
We demonstrate how processing methods affect the thermoelectric properties of thin films of a high mobility semiconducting polymer, PBTTT. Two doping methods were compared: vapor deposition of (tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane (FTS) or immersion in a solvent containing 4-ethylbenzenesulfonic acid (EBSA). Thermally annealed, thin films doped by FTS deposited from vapor yield a high Seebeck coefficient (α) at high electronic conductivity (σ) and, in turn, a large power factor (PF = α2σ) of â¼100 µW m-1 K-2. The FTS-doped films yield α values that are a factor of 2 higher than the EBSA-doped films at comparable high value of σ. A detailed analysis of X-ray scattering experiments indicates that perturbations in the local structure from either dopant are not significant enough to account for the difference in α. Therefore, we postulate that an increase in α arises from the entropic vibrational component of α or changes in scattering of carriers in disordered regions in the film.
RESUMO
While recent improvements in the reported peak power conversion efficiency (PCE) of hybrid organic-inorganic perovskite solar cells have been truly astonishing, there are many fundamental questions about the electronic behavior of these materials. Here we have studied a set of electronic devices employing methylammonium lead iodide ((MA)PbI3) as the active material and conducted a series of temperature-dependent measurements. Field-effect transistor, capacitor, and photovoltaic cell measurements all reveal behavior consistent with substantial and strongly temperature-dependent polarization susceptibility in (MA)PbI3 at temporal and spatial scales that significantly impact functional behavior. The relative PCE of (MA)PbI3 photovoltaic cells is observed to reduce drastically with decreasing temperature, suggesting that such polarization effects could be a prerequisite for high-performance device operation.
RESUMO
The thermoelectric properties of a highperformance electron-conducting polymer, (P(NDIOD-T2), extrinsically doped with dihydro-1H-benzoimidazol-2-yl (NDBI) derivatives, are reported. The highest thermoelectric power factor that has been reported for a solution-processed n-type polymer is achieved; and it is concluded that engineering polymerdopant miscibility is essential for the development of organic thermoelectrics.
