Evaluating the Surface Chemistry of Black Phosphorus during Ambient Degradation.

Black phosphorus (BP) is emerging as a promising candidate for electronic, optical, and energy storage applications. However, its poor ambient stability remains a critical challenge. Evaluation of few-layer liquid-exfoliated BP during ambient exposure using X-ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared spectroscopy allows its surface chemistry to be investigated. Oxidation of liquid-exfoliated few-layer BP initially occurs through nonbridging oxide species, which convert to bridging oxide species after ambient exposure. We demonstrate the instability of these bridging oxide species, which undergo hydrolysis to form volatile phosphorus oxides and evaporate from the BP surface. FTIR spectroscopy, scanning transmission electron microscopy, and atomic force microscopy were used to confirm the formation of liquid oxides through a continuous oxidation cycle that results in the decomposition of BP. Furthermore, we show that the instability of few-layer BP originates from the formation of bridging oxide species.

Functionalization of SiO2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination.

Monolayer doping (MLD) involves the functionalization of semiconductor surfaces followed by an annealing step to diffuse the dopant into the substrate. We report an alternative doping method, oxide-MLD, where ultrathin SiO2 overlayers are functionalized with phosphonic acids for doping Si. Similar peak carrier concentrations were achieved when compared with hydrosilylated surfaces (∼2 × 1020 atoms/cm3). Oxide-MLD offers several advantages over conventional MLD, such as ease of sample processing, superior ambient stability, and minimal carbon contamination. The incorporation of an oxide layer minimizes carbon contamination by facilitating attachment of carbon-free precursors or by impeding carbon diffusion. The oxide-MLD strategy allows selection of many inexpensive precursors and therefore allows application to both p- and n-doping. The phosphonic acid-functionalized SiO2 surfaces were investigated using X-ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared spectroscopy, whereas doping was assessed using electrochemical capacitance voltage and Hall measurements.

Large Block Copolymer Self-Assembly for Fabrication of Subwavelength Nanostructures for Applications in Optics.

Nanostructured surfaces are common in nature and exhibit properties such as antireflectivity (moth eyes), self-cleaning (lotus leaf), iridescent colors (butterfly wings), and water harvesting (desert beetles). We now understand such properties and can mimic some of these natural structures in the laboratory. However, these synthetic structures are limited since they are not easily mass produced over large areas due to the limited scalability of current technologies such as UV-lithography, the high cost of infrastructure, and the difficulty in nonplanar surfaces. Here, we report a solution process based on block copolymer (BCP) self-assembly to fabricate subwavelength structures on large areas of optical and curved surfaces with feature sizes and spacings designed to efficiently scatter visible light. Si nanopillars (SiNPs) with diameters of ∼115 ± 19 nm, periodicity of 180 ± 18 nm, and aspect ratio of 2-15 show a reduction in reflectivity by a factor of 100, <0.16% between 400 and 900 nm at an angle of incidence of 30°. Significantly, the reflectivity remains below 1.75% up to incident angles of 75°. Modeling the efficiency of a SiNP PV suggests a 24.6% increase in efficiency, representing a 3.52% (absolute) or 16.7% (relative) increase in electrical energy output from the PV system compared to AR-coated device.

Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers.

The functionalization and subsequent monolayer doping of InGaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO3 nanowire networks on smooth Si/SiO2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V2 O5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.

Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping.

Devices composed of transparent materials, particularly those utilizing metal oxides, are of significant interest due to increased demand from industry for higher fidelity transparent thin film transistors, photovoltaics and a myriad of other optoelectronic devices and optics that require more cost-effective and simplified processing techniques for functional oxides and coatings. Here, we report a facile solution processed technique for the formation of a transparent thin film through an inter-diffusion process involving substrate dopant species at a range of low annealing temperatures compatible with processing conditions required by many state-of-the-art devices. The inter-diffusion process facilitates the movement of Si, Na and O species from the substrate into the as-deposited vanadium oxide thin film forming a composite fully transparent V0.0352O0.547Si0.4078Na0.01. Thin film X-ray diffraction and Raman scattering spectroscopy show the crystalline component of the structure to be α-NaVO3 within a glassy matrix. This optical coating exhibits high broadband transparency, exceeding 90-97% absolute transmission across the UV-to-NIR spectral range, while having low roughness and free of surface defects and pinholes. The production of transparent films for advanced optoelectronic devices, optical coatings, and low- or high-k oxides is important for planar or complex shaped optics or surfaces. It provides opportunities for doping metal oxides to ternary, quaternary or other mixed metal oxides on glass, encapsulants or other substrates that facilitate diffusional movement of dopant species.

Linking Precursor Alterations to Nanoscale Structure and Optical Transparency in Polymer Assisted Fast-Rate Dip-Coating of Vanadium Oxide Thin Films.

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness.

Optimizing vanadium pentoxide thin films and multilayers from dip-coated nanofluid precursors.

Using an alkoxide-based precursor, a strategy for producing highly uniform thin films and multilayers of V2O5 is demonstrated using dip coating. Defect-free and smooth films of V2O5 on different surfaces can be deposited from liquid precursors. We show how pinholes are formed due to heterogeneous nucleation during hydrolysis as the precursor forms a nanofluid. Using knowledge of instability formation often found in composite nanofluid films and the influence of cluster formation on the stability of these films, we show how polymer-precursor mixtures provide optimum uniformity and very low surface roughness in amorphous V2O5 and also orthorhombic V2O5 after crystallization by heating. Pinhole and roughness instability formation during the liquid stage of the nanofluid on gold and ITO substrates is suppressed giving a uniform coating. Practically, understanding evolution pathways that involve dewetting processes, nucleation, decomposition, or hydrolysis in complex nanofluids provides a route for improved uniformity of thin films. The method could be extended to improve the consistency in sequential or iterative multilayer deposits of a range of liquid precursors for functional materials and coatings.

Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering.

The understanding of the mechanisms of macropore formation in p-type Si with respect to modulation of the pore diameter is still in its infancy. In the present work, macropores with significantly modulated diameters have been produced electrochemically in p-type Si. The effect of the current density and the amount of surfactant in the etching solution are shown to influence the modulation in pore diameter and morphology. Data obtained during the etching process by in situ FFT impedance spectroscopy correlate the pore diameter variation with certain time constants found in the kinetics of the dissolution process. Raman scattering and electron microscopy confirm the mesoscopic structure and roughening of the pore walls. Spectroscopic and microscopic methods confirm that the pore wall morphology is correlated with the conditions of pore modulation.