Inkjet-printed h-BN memristors for hardware security.

Inkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that is expected to grow to ∼23 billion USD by 2026, driven by applications like displays, photovoltaics, lighting, and radiofrequency identification. Incorporating two-dimensional (2D) materials into this technology could further enhance the properties of the existing devices and/or circuits, as well as enable the development of new concept applications. Along these lines, here we report an easy and cheap process to synthesize inks made of multilayer hexagonal boron nitride (h-BN)-an insulating 2D layered material-by the liquid-phase exfoliation method and use them to fabricate memristors. The devices exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits for data encryption (physical unclonable functions [PUFs], true random number generators [TRNGs]), such as: (i) a very disperse initial resistance and dielectric breakdown voltage, (ii) volatile unipolar and non-volatile bipolar resistive switching (RS) with a high cycle-to-cycle variability of the state resistances, and (iii) random telegraph noise (RTN) current fluctuations. The clue for the observation of these stochastic phenomena resides on the unpredictable nature of the device structure derived from the inkjet printing process (i.e., thickness fluctuations, random flake orientations), which allows fabricating electronic devices with different electronic properties. The easy-to-make and cheap memristors here developed are ideal to encrypt the information produced by multiple types of objects and/or products, and the versatility of the inkjet printing method, which allows effortless deposition on any substrate, makes our devices especially attractive for flexible and wearable devices within the internet-of-things.

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems.

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO2/Si-NCs/SiO2 multilayer structure acts as an RS layer. These devices exhibit bipolar RS with an intermediate resistance step during SET and RESET processes, which is believed to lie in the Si-NCs layer acting as charge-trapping nodes. The endurance studies of about 70 DC cycles indicate an ON/OFF ratio of ~106 and a retention time larger than 104 s. Long-term potentiation (LTP, -2 V) and long-term depression (LTD, +4 V) are obtained by applying consecutive identical pulse voltages of 150 ms duration. The current value gradually increases/decreases (LTP/LTD) as the pulse number increases. Three consecutive identical pulses of -2 V/150 ms (LTP) separated by 5 and 15 min show that the last current value obtained at the end of each pulse train is kept, confirming an analog RS behavior. These characteristics provide a possible way to mimic biological synapse functions for applications in neuromorphic computing in Si-NCs-based CMOS structures.

Spraying dynamics in continuous wave laser printing of conductive inks.

Laser-induced forward transfer (LIFT), though usually associated with pulsed lasers, has been recently shown to be feasible for printing liquid inks with continuous wave (CW) lasers. This is remarkable not only because of the advantages that the new approach presents in terms of cost, but also because of the surprising transfer dynamics associated with it. In this work we carry out a study of CW-LIFT aimed at understanding the new transfer dynamics and its correlation with the printing outcomes. The CW-LIFT of lines of Ag ink at different laser powers and scan speeds revealed a range of conditions that allowed printing conductive lines with good electrical properties. A fast-imaging study showed that liquid ejection corresponds to a spraying behavior completely different from the jetting characteristic of pulsed LIFT. We attribute the spray to pool-boiling in the donor film, in which bursting bubbles are responsible for liquid ejection in the form of projected droplets. The droplet motion is then modeled as the free fall of rigid spheres in a viscous medium, in good agreement with experimental observations. Finally, thermo-capillary flow in the donor film allows understanding the evolution of the morphology of the printed lines with laser power and scan speed.

Low-Cost Fabrication of Printed Electronics Devices through Continuous Wave Laser-Induced Forward Transfer.

Laser-induced forward transfer (LIFT) is a direct-writing technique that allows printing inks from a liquid film in a similar way to inkjet printing but with fewer limitations concerning ink viscosity and loading particle size. In this work, we prove that liquid inks can be printed through LIFT by using continuous wave (CW) instead of pulsed lasers, which allows a substantial reduction in the cost of the printing system. Through the fabrication of a functional circuit on both rigid and flexible substrates (plastic and paper), we provide a proof-of-concept that demonstrates the versatility of the technique for printed electronics applications.