RESUMO
A process for fabricating dense graphene nanoribbon arrays using self-assembled patterns of block copolymers on graphene grown epitaxially on SiC on the wafer scale has been developed. Etching masks comprising long and straight nanoribbon array structures with linewidths as narrow as 10 nm were fabricated, and the patterns were transferred to graphene. Our process combines both top-down and self-assembly steps to fabricate long graphene nanoribbon arrays with low defect counts. These are the narrowest nanoribbon arrays of epitaxial graphene on SiC fabricated to date.
Assuntos
Compostos Inorgânicos de Carbono/química , Cristalização/métodos , Grafite/química , Impressão Molecular/métodos , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Fotografação/métodos , Compostos de Silício/química , Compostos Inorgânicos de Carbono/efeitos da radiação , Grafite/efeitos da radiação , Substâncias Macromoleculares/química , Substâncias Macromoleculares/efeitos da radiação , Teste de Materiais , Conformação Molecular/efeitos da radiação , Nanoestruturas/efeitos da radiação , Tamanho da Partícula , Compostos de Silício/efeitos da radiação , Propriedades de Superfície/efeitos da radiaçãoRESUMO
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.