Current-induced domain wall motion in a van der Waals ferromagnet Fe3GeTe2.

The manipulation of spin textures by spin currents is of fundamental and technological interest. A particularly interesting system is the 2D van der Waals ferromagnet Fe3GeTe2, in which Néel-type skyrmions have recently been observed. The origin of these chiral spin textures is of considerable interest. Recently, it was proposed that these derive from defects in the structure that lower the symmetry and allow for a bulk vector Dzyaloshinsky-Moriya interaction. Here, we demonstrate current-induced domain wall motion in Fe3GeTe2 flakes, in which the maximum domain wall velocity is an order of magnitude higher than those reported in previous studies. In heterostructures with Pt or W layers on top of the Fe3GeTe2 flakes, domain walls can be moved via a combination of spin transfer and spin-orbit torques. The competition between these torques leads to a change in the direction of domain wall motion with increasing magnitude of the injected current.

All-electrical reading and writing of spin chirality.

Spintronics promises potential data encoding and computing technologies. Spin chirality plays a very important role in the properties of many topological and noncollinear magnetic materials. Here, we propose the all-electrical detection and manipulation of spin chirality in insulating chiral antiferromagnets. We demonstrate that the spin chirality in insulating epitaxial films of TbMnO3 can be read electrically via the spin Seebeck effect and can be switched by electric fields via the multiferroic coupling of the spin chirality to the ferroelectric polarization. Moreover, multivalued states of the spin chirality can be realized by the combined application of electric and magnetic fields. Our results are a path toward next-generation, low-energy consumption memory and logic devices that rely on spin chirality.

Three-dimensional racetrack memory devices designed from freestanding magnetic heterostructures.

The fabrication of three-dimensional nanostructures is key to the development of next-generation nanoelectronic devices with a low device footprint. Magnetic racetrack memory encodes data in a series of magnetic domain walls that are moved by current pulses along magnetic nanowires. To date, most studies have focused on two-dimensional racetracks. Here we introduce a lift-off and transfer method to fabricate three-dimensional racetracks from freestanding magnetic heterostructures grown on a water-soluble sacrificial release layer. First, we create two-dimensional racetracks from freestanding films transferred onto sapphire substrates and show that they have nearly identical characteristics compared with the films before transfer. Second, we design three-dimensional racetracks by covering protrusions patterned on a sapphire wafer with freestanding magnetic heterostructures. We demonstrate current-induced domain-wall motion for synthetic antiferromagnetic three-dimensional racetracks with protrusions of up to 900 nm in height. Freestanding magnetic layers, as demonstrated here, may enable future spintronic devices with high packing density and low energy consumption.

Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets.

The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in the magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. Furthermore, we demonstrate an example of an ionitronic-based spintronic switch as a component of a potential logic technology towards energy-efficient, all electrical, memory-in-logic.

Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering.

Magnetic racetrack devices are promising candidates for next-generation memories. These spintronic shift-register devices are formed from perpendicularly magnetized ferromagnet/heavy metal thin-film systems. Data are encoded in domain wall magnetic bits that have a chiral Néel structure that is stabilized by an interfacial Dzyaloshinskii-Moriya interaction. The bits are manipulated by spin currents generated from electrical currents that are passed through the heavy metal layers. Increased efficiency of the current-induced domain wall motion is a prerequisite for commercially viable racetrack devices. Here, significantly increased efficiency with substantially lower threshold current densities and enhanced domain wall velocities is demonstrated by the introduction of atomically thin 4d and 5d metal "dusting" layers at the interface between the lower magnetic layer of the racetrack (here cobalt) and platinum. The greatest efficiency is found for dusting layers of palladium and rhodium, just one monolayer thick, for which the domain wall's velocity is increased by up to a factor of 3.5. Remarkably, when the heavy metal layer is formed from the dusting layer material alone, the efficiency is rather reduced by an order of magnitude. The results point to the critical role of interface engineering for the development of efficient racetrack memory devices.

Investigation of spin-orbit torque using current-induced magnetization curve.

Manipulation of magnetization using current-induced torque is crucial for magnetic recording devices. Recently, the spin-orbit torque (SOT) that emerges in a ferromagnetic thin film on a heavy metal is focused as a new scheme for magnetization switching in perpendicularly magnetized systems. Since the SOT provides a perpendicular effective field to the system, the formation of a magnetic multiple domain state because of Joule heating is supressed in the magnetization reversal process. This means that high reliable switching is possible using the SOT. Here, by utilizing the SOT induced domain stability, we show that an electrical current directly injected to a perpendicularly magnetized Pt/Co/Pd system can magnetize itself, that is, current-induced magnetization process from multi to single domain state. A quantitative determination of the SOT is performed using the current-induced magnetization curve. The present results are of great importance as another approach to evaluate the SOT effect, as well as a demonstration of domain state switching caused by the SOT.