Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide.

Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe2) simply deposited on a structured electrode, i.e., core-shell silicon-gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe2-based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance.

Deep-UV photoinduced chemical patterning at the micro- and nanoscale for directed self-assembly.

Deep-UV (DUV) laser patterning has been widely used in recent years for micro- and nanopatterning, taking advantage of the specific properties of irradiation with high-energy photons. In this paper, we show the usefulness of DUV laser patterning for preparing surfaces with controlled chemical properties at the micro- and nanoscale. Our motivation was to develop a simple and versatile method for chemical patterning at multiscales (from mm to nm) over relatively wide areas (mm2 to cm2). The chemical properties were provided by self-assembled monolayers (SAMs), prepared on glass or silicon wafers. We first investigated their modification under our irradiation conditions (ArF laser) using AFM, XPS and contact angle measurements. Photopatterning was then demonstrated with minimum feature sizes as small as 75 nm, and we showed the possibility to regraft a second SAM on the irradiated regions. Finally, we used these chemically patterned surfaces for directed self-assembly of several types of objects, such as block copolymers, sol-gel materials and liquids by vapor condensation.

Local reorganization of diblock copolymer domains in directed self-assembly monitored by in situ high-temperature AFM.

In situ high-temperature AFM was used to locally follow dynamic processes, leading to directed self-assembly of copolymers in the context of graphoepitaxy. We focused on the effect of heating for temperatures much higher than the Tg of the used PS-b-PMMA polymer. We showed that such conditions favors the block rearrangement, leading to very regular and perfectly aligned structures in limited times. The use of in situ AFM allowed us to locally investigate the self-organization process at high temperature, thus bringing new insights into self-assembly of block copolymers by graphoepitaxy. In particular, we demonstrate that a slight increase of temperature between 180 and 200 °C allowed overpassing an energy barrier and considerably improves the long distance arrangement, even for relatively short times.