Increasing the wear resistance by interstitial alloying with boron via chemical vapor deposition.

The wear resistance of a Rh(111) surface can be strongly increased by interstitial alloying with boron atoms via chemical vapor deposition of trimethylborate [B(OCH3)3] at moderate temperatures of about 800 K. The fragmentation of the precursor results in single boron atoms that are incorporated in the fcc lattice of the substrate, as displayed by X-ray photoelectron diffraction. The penetration depth of the boron atoms is in the range of at least 100 nm with the boron distribution displaying a nearly homogeneous depth profile, as examined by combined X-ray photoelectron spectroscopy and Ar ion etching experiments. Compared to the bare Rh(111) surface, the wear resistance of the boron-doped Rh surface is increased to about 400%, as probed by the scratching experiments with atomic force microscopy. The presented synthesis route provides an easy method for case hardening of micro- or nanoelectromechanical devices (MEMS and NEMS, respectively) at moderate temperatures.

Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition.

The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ.

Elemental depth profiling of fluoridated hydroxyapatite: saving your dentition by the skin of your teeth?

Structural and chemical changes that arise from fluoridation of hydroxyapatite (Ca(5)(PO(4))(3)OH or "HAp"), as representing the synthetic counterpart of tooth enamel, are investigated by X-ray photoelectron spectroscopy (XPS). Elemental depth profiles with a depth resolution on the nanometer scale were determined to reveal the effect of fluoridation in neutral (pH = 6.2) and acidic agents (pH = 4.2). With respect to the chemical composition and the crystal structure, XPS depth profiling reveals different effects of the two treatments. In both cases, however, the fluoridation affects the surface only on the nanometer scale, which is in contrast to recent literature with respect to XPS analysis on dental fluoridation, where depth profiles of F extending to several micrometers were reported. In addition to the elemental depth profiles, as published in various other studies, we also present quantitative depth profiles of the compounds CaF(2), Ca(OH)(2), and fluorapatite (FAp) that were recently proposed by a three-layer model concerning the fluoridation of HAp in an acidic agent. The analysis of our experimental data exactly reproduces the structural order of this model, however, on a scale that differs by nearly 2 orders of magnitude from previous predictions. The results also reveal that the amount of Ca(OH)(2) and FAp is small compared to that of CaF(2). Therefore, it has to be asked whether such narrow Ca(OH)(2) and FAp layers really can act as protective layers for the enamel.

How does graphene grow? Easy access to well-ordered graphene films.

The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.