Measuring Electrical Resistivity at the Nanoscale in Phase-Change Materials.

Electrical resistivity is the key parameter in the active regions of many current nanoscale devices, from memristors to resistive random-access memory and phase-change memories. The local resistivity of the materials is engineered on the nanoscale to fit the performance requirements. Phase-change memories, for example, rely on materials whose electrical resistance increases dramatically with a change from a crystalline to an amorphous phase. Electrical characterization methods have been developed to measure the response of individual devices, but they cannot map the local resistance across the active area. Here, we propose a method based on operando electron holography to determine the local resistance within working devices. Upon switching the device, we show that electrical resistance is inhomogeneous on the scale of only a few nanometers.

Electron microscopy by specimen design: application to strain measurements.

A bewildering number of techniques have been developed for transmission electron microscopy (TEM), involving the use of ever more complex combinations of lens configurations, apertures and detector geometries. In parallel, the developments in the field of ion beam instruments have modernized sample preparation and enabled the preparation of various types of materials. However, the desired final specimen geometry is always almost the same: a thin foil of uniform thickness. Here we will show that judicious design of specimen geometry can make all the difference and that experiments can be carried out on the most basic electron microscope and in the usual imaging modes. We propose two sample preparation methods that allow the formation of controlled moiré patterns for general monocrystalline structures in cross-section and at specific sites. We developed moiré image treatment algorithms using an absolute correction of projection lens distortions of a TEM that allows strain measurements and mapping with a nanometer resolution and 10-4 precision. Imaging and diffraction techniques in other fields may in turn benefit from this technique in perspective.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

The impact of electromechanical coupling on optical properties of light-emitting diodes (LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical simulations. The structure, i.e. the shape and the average In content of the QDs, has been directly derived from experimental data on out-of-plane strain distribution obtained from the geometric-phase analysis of a high-resolution transmission electron microscopy image of an LED structure grown by metalorganic vapor-phase epitaxy. Using continuum [Formula: see text] calculations, we have studied first the lateral and full electromechanical coupling between the QDs in the active region and its impact on the emission spectrum of a single QD located in the center of the region. Our simulations demonstrate the spectrum to be weakly affected by the coupling despite the strong common strain field induced in the QD active region. Then we analyzed the effect of vertical coupling between vertically stacked QDs as a function of the interdot distance. We have found that QCSE gives rise to a blue-shift of the overall emission spectrum when the interdot distance becomes small enough. Finally, we compared the theoretical spectrum obtained from simulation of the entire active region with an experimental electroluminescence (EL) spectrum. While the theoretical peak emission wavelength of the selected central QD corresponded well to that of the EL spectrum, the width of the latter one was determined by the scatter in the structures of various QDs located in the active region. Good agreement between the simulations and experiment achieved as a whole validates our model based on realistic structure of the QD active region and demonstrates advantages of the applied approach.

A new linear transfer theory and characterization method for image detectors. Part II: experiment.

A novel generalized linear transfer theory describing the signal and noise transfer in image detectors has been developed in Part I (Niermann, this issue, [1]) of this paper. Similar to the existing notion of a point spread function (PSF) describing the transfer of the first statistical moment (the average), a noise spread function (NSF) was introduced to characterize the spatially resolved transfer of noise (central second moment, covariance). Following the theoretic results developed in Part I (Niermann, this issue, [1]), a new experimental method based on single spot illumination has been developed and applied to measure 2D point and 4D noise spread functions of CCD cameras used in TEM. A dedicated oversampling method has been used to suppress aliasing in the measured quantities. We analyze the 4D noise spread with respect to electronic and photonic noise contributions.

Effects of elastic anisotropy on strain distributions in decahedral gold nanoparticles.

Metallic nanoparticles exhibit exceptional optoelectronic properties with applications in plasmonics, biosensing and nanomedicine. Recently, new synthesis techniques have enabled precise control over the sizes and shapes of metal nanoparticles, occasionally leading to morphologies that cannot be properly characterized using standard techniques. An example is five-fold-twinned decahedral Au nanoparticles, which are intrinsically strained as a result of their unique geometry. Various competing models have been proposed to predict the strain states of such nanoparticles. Here, we present a detailed analysis of the internal structure of a decahedral Au nanoparticle using aberration-corrected high-resolution electron microscopy and strain mapping. Our measurements confirm the presence of a disclination, which is consistent with the commonly accepted strain model. However, we also observed shear gradients, which are absent from the models. By comparing our local strain determinations with finite-element calculations, we show the effect of elastic anisotropy on the strain state in these nanoparticles.

Nanoscale waviness of low-angle grain boundaries.

Low-angle grain boundaries (LAGBs) are ubiquitous in natural and man-made materials and profoundly affect many of their mechanical, chemical, and electrical properties. The properties of LAGBs are understood in terms of their constituent dislocations that accommodate the small misorientations between grains. Discrete dislocations result in a heterogeneous local structure along the boundary. In this article, we report the lattice rotation across a LAGB in olivine (Mg(1.8)Fe(0.2)SiO(4)) measured at the nanometer scale by using quantitative high-resolution transmission electron microscopy. The analysis reveals a grain boundary that is corrugated. Elastic calculations show that this waviness is independent of the host material and thus a general feature of LAGBs. Based on our observations and analysis, we provide equations for the boundary position, local curvature, and the lattice rotation field for any LAGB. These results provide the basis for a reexamination of grain-boundary properties in materials such as high-temperature superconductors, nanocrystalline materials, and naturally deformed minerals.

Off-axis electron holography of magnetic nanowires and chains, rings, and planar arrays of magnetic nanoparticles.

A selection of recent results illustrating the application of off-axis electron holography to the study of magnetic microstructure in closely-spaced nanoparticles and nanowires is reviewed. Examples are taken from the characterization of FeNi nanoparticle chains, Co nanoparticle rings, two-dimensional arrays of naturally occurring magnetite crystals in minerals, and single crystalline Co nanowires. Approaches that can be used to separate the magnetic signal of interest from the mean inner potential contribution to the measured holographic phase shift are described, and the spatial and phase resolution that can be achieved are discussed.

Measurement of the displacement field of dislocations to 0.03 A by electron microscopy.

Defects and their associated long-range strain fields are of considerable importance in many areas of materials science. For example, a major challenge facing the semiconductor industry is to understand the influence of defects on device operation, a task made difficult by the fact that their interactions with charge carriers can occur far from defect cores, where the influence of the defect is subtle and difficult to quantify. The accurate measurement of strain around defects would therefore allow more detailed understanding of how strain fields affect small structures-in particular their electronic, mechanical and chemical properties--and how such fields are modified when confined to nanometre-sized volumes. Here we report the measurement of displacements around an edge dislocation in silicon using a combination of high-resolution electron microscopy and image analysis inherited from optical interferometry. The agreement of our observations with anisotropic elastic theory calculations is better than 0.03 A. Indeed, the results can be considered as an experimental verification of anisotropic theory at the near-atomic scale. With the development of nanostructured materials and devices, we expect the use of electron microscopy as a metrological tool for strain analysis to become of increasing importance.

Near-perfect elastoplasticity in pure nanocrystalline copper.

Ductile metals and alloys undergo plastic yielding at room temperature, during which they exhibit work-hardening and the generation of surface instabilities that lead to necking and failure. We show that pure nanocrystalline copper behaves differently, displaying near-perfect elastoplastic behavior characterized by Newtonian flow and the absence of both work-hardening and neck formation. We observed this behavior in tensile tests on fully dense large-scale bulk nanocrystalline samples. The experimental results further our understanding of the unique mechanical properties of nanocrystalline materials and also provide a basis for commercial technologies for the plastic (and superplastic) formation of such materials.

Vortex flux channeling in magnetic nanoparticle chains.

A detailed understanding of the formation of magnetic vortices in closely spaced ferromagnetic nanoparticles is important for the design of ultra-high-density magnetic devices. Here, we use electron holography and micromagnetic simulations to characterize three-dimensional magnetic vortices in chains of FeNi nanoparticles. We show that the diameters of the vortex cores depend sensitively on their orientation with respect to the chain axis and that vortex formation can be controlled by the presence of smaller particles in the chains.