Isotropic Spin Hall Effect in an Epitaxial Ferromagnet.

We report the observation of the isotropic spin Hall effect in a ferromagnet. We show that the spin Hall effect in an epitaxially grown Fe_{3}Si generates a sizable spin current with a spin direction that is noncollinear with the magnetization. Furthermore, we find that the spin Hall current is independent of the relative orientation between its spin direction and the magnetization; the spin Hall effect is isotropic. This observation demonstrates that the intrinsically generated transverse spin component is protected from dephasing, providing fundamental insights into the generation and transport of spin currents in ferromagnets.

Modulation of magnetization dynamics in an epitaxial Heusler ferromagnet due to pure spin current in a laterally configured structure.

Using a laterally configured structure, we demonstrate modulation of the magnetization dynamics of an epitaxial Heusler ferromagnet, Fe3Si, by nonlocally injecting pure spin currents. From the ferromagnetic resonance signals, the effective Gilbert damping constant ([Formula: see text]) of the epitaxial Fe3Si nanomagnet is estimated to be ∼0.003 at room temperature. By using the lateral and nonlocal spin injection, the [Formula: see text] value of the epitaxial Fe3Si nanomagnet can be modulated from 0.0034 to 0.0024. This study will open a way for control of the magnetization dynamics of high-performance ferromagnetic Heusler alloys due to pure spin currents even in laterally configured structures.

Magnetic and structural depth profiles of Heusler alloy Co2FeAl0.5Si0.5 epitaxial films on Si(1 1 1).

The depth-resolved chemical structure and magnetic moment of [Formula: see text], thin films grown on Si(1 1 1) have been determined using x-ray and polarized neutron reflectometry. Bulk-like magnetization is retained across the majority of the film, but reduced moments are observed within 45[Formula: see text] of the surface and in a 25[Formula: see text] substrate-interface region. The reduced moment is related to compositional changes due to oxidation and diffusion, which are further quantified by elemental profiling using electron microscopy with electron energy loss spectroscopy. The accuracy of structural and magnetic depth-profiles obtained from simultaneous modeling is discussed using different approaches with different degree of constraints on the parameters. Our approach illustrates the challenges in fitting reflectometry data from these multi-component quaternary Heusler alloy thin films.

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts.

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.

Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111).

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors.

Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.

By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co2(Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.