Protein's Protein Corona: Nanoscale Size Evolution of Human Immunoglobulin G Aggregates Induced by Serum Albumin.

Nanoparticles are readily coated by proteins in biological systems. The protein layers on the nanoparticles, which are called the protein corona, influence the biological impacts of the nanoparticles, including internalization into cells and cytotoxicity. This study expands the scope of the nanoparticle's protein corona for exogenous artificial nanoparticles to that for exogenous proteinaceous nanoparticles. Specifically, this study addresses the formation of protein coronas on nanoscale human antibody aggregates with a radius of approximately 20-40 nm, where the antibody aggregates were induced by a pH shift from low to neutral pH. The size of the human immunoglobulin G (hIgG) aggregates grew to approximately 25 times the original size in the presence of human serum albumin (HSA). This size evolution was ascribed to the association of the hIgG aggregates, which was triggered by the formation of the hIgG aggregate's protein corona, i.e., protein's protein corona, consisting of the adsorbed HSA molecules. Because hIgG aggregate association was significantly reduced by the addition of 30-150 mM NaCl, it was attributed to electrostatic attraction, which was supported by molecular dynamics (MD) simulations. Currently, the use of antibodies as biopharmaceuticals is concerning because of undesired immune responses caused by antibody aggregates that are typically generated by a pH shift during the antibody purification process. The present findings suggest that nanoscale antibody aggregates form protein coronas induced by HSA and the resulting nanoscale antibody-HSA complexes are stable in blood containing approximately 150 mM salt ions, at least in terms of the size evolution. Mechanistic insights into protein corona formation on nanoscale antibody aggregates are useful for understanding the unintentional biological impacts of antibody drugs.

Temperature-dependent second-harmonic generation from color centers in diamond.

Under infrared ultrashort pulse laser stimulation, we investigate temperature-dependent second-harmonic generation (SHG) from nitrogen-vacancy (NV)-introduced bulk diamond. The SHG intensity decreases in the temperature range of 20-300°C, due to phase mismatching caused by refractive index modification. We discover that optical phonon scattering outperforms acoustic phonon scattering in NV diamond by fitting the temperature dependence of the SHG intensity using a model based on the bandgap change via the deformation potential interaction. This study presents an efficient and viable way for creating diamond-based nonlinear optical temperature sensing.

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties.

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very different from those grown on semi-insulating GaAs substrates ('reference'). In this study, we investigate optical properties of an epitaxial grown LT-GaAs/Si sample, compared to a reference grown under the same substrate temperature, and with the same layer thickness. Anti-phase domains and some crystal misorientation are present in the LT-GaAs/Si. From coherent phonon spectroscopy, the intrinsic carrier densities are estimated to be 1015 cm-3for either sample. Strong plasmon damping is also observed. Carrier dynamics, measured by time-resolved THz spectroscopy at high excitation fluence, reveals markedly different responses between samples. Below saturation, both samples exhibit the desired fast response. Under optical fluences ⩾54µJ cm-2, the reference LT-GaAs layer shows saturation of electron trapping states leading to non-exponential behavior, but the LT-GaAs/Si maintains a double exponential decay. The difference is attributed to the formation of As-As and Ga-Ga bonds during the heteroepitaxial growth of LT-GaAs/Si, effectively leading to a much lower density of As-related electron traps.

Giant nonlinear optical effects induced by nitrogen-vacancy centers in diamond crystals.

We investigate the effect of nitrogen-vacancy (NV) centers in single crystal diamond on nonlinear optical effects using 40 fs femtosecond laser pulses. The near-infrared femtosecond pulses allow us to study purely nonlinear optical effects, such as optical Kerr effect (OKE) and two-photon absorption (TPA), related to unique optical transitions by electronic structures with NV centers. It is found that both nonlinear optical effects are enhanced by the introduction of NV centers in the N + dose levels of 2.0×10 11 and 1.0×10 12 N +/cm 2. In particular, our data demonstrate that the OKE signal is strongly enhanced for the heavily implanted type-IIa diamond. We suggest that the strong enhancement of the OKE is possibly originated from cascading OKE, where the high-density NV centers effectively break the inversion symmetry near the surface region of diamond.

Photon energy dependence of Kerr rotation in GeTe/Sb2Te3 chalcogenide superlattices.

We report on pump-probe based helicity dependent time-resolved Kerr measurements under infrared excitation of chalcogenide superlattices, consisting of alternately stacked GeTe and Sb2Te3 layers. The Kerr rotation signal consists of the specular inverse Faraday effect (SIFE) and the specular optical Kerr effect (SOKE), both of which are found to monotonically increase with decreasing photon energy over a sub-eV energy range. Although the dependence of the SIFE can be attributed to the response function of direct third-order nonlinear susceptibility, the magnitude of the SOKE reflects cascading second-order nonlinear susceptibility resulting from electronic transitions between bulk valence/conduction bands and interface-originating Dirac states of the superlattice.

Zener Tunneling Breakdown in Phase-Change Materials Revealed by Intense Terahertz Pulses.

We have systematically investigated the spatial and temporal dynamics of crystallization that occur in the phase-change material Ge_{2}Sb_{2}Te_{5} upon irradiation with an intense terahertz (THz) pulse. THz-pump-optical-probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This fact causes the large enhancement of electric field associated with the THz pulses only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to nanometer-scale crystal growth parallel to the field and the formation of filamentary conductive domains across the sample.

Topological Phase Buried in a Chalcogenide Superlattice Monitored by Helicity-Dependent Kerr Measurement.

Chalcogenide superlattices (SLs), formed by the alternate stacking of GeTe and Sb2Te3 layers, also referred to as interfacial phase-change memory (iPCM), are a leading candidate for spin-based memory device applications. Theoretically, the iPCM structure has been predicted to form a three-dimensional topological insulator or Dirac semimetal phase depending on the constituent layer thicknesses. Here, we experimentally investigate the topological insulating nature of chalcogenide SLs using a helicity-dependent time-resolved Kerr measurement. The helicity-dependent Kerr signal is observed to exhibit a four-cycle oscillation with π/2 periodicity, suggesting the existence of a Dirac-like cone in some chalcogenide SLs. Furthermore, we found that increasing the thickness of the GeTe layer dramatically changed the periodicity, indicating a phase transition from a Dirac semimetal into a trivial insulator. Our results demonstrate that thickness-tuned chalcogenide SLs can play an important role in the manipulation of topological states, which may open up new possibilities for spintronic devices based on chalcogenide SLs.

A cascading nonlinear magneto-optical effect in topological insulators.

Topological insulators (TIs) are characterized by possessing metallic (gapless) surface states and a finite band-gap state in the bulk. As the thickness of a TI layer decreases down to a few nanometers, hybridization between the top and bottom surfaces takes place due to quantum tunneling, consequently at a critical thickness a crossover from a 3D-TI to a 2D insulator occurs. Although such a crossover is generally accessible by scanning tunneling microscopy, or by angle-resolved photoemission spectroscopy, such measurements require clean surfaces. Here, we demonstrate that a cascading nonlinear magneto-optical effect induced via strong spin-orbit coupling can examine such crossovers. The helicity dependence of the time-resolved Kerr rotation exhibits a robust change in periodicity at a critical thickness, from which it is possible to predict the formation of a Dirac cone in a film several quintuple layers thick. This method enables prediction of a Dirac cone using a fundamental nonlinear optical effect that can be applied to a wide range of TIs and related 2D materials.

Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy.

We present the use of a "double optical pump" technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from "double optical pump" THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Anisotropic lattice response induced by a linearly-polarized femtosecond optical pulse excitation in interfacial phase change memory material.

Optical excitation of matter with linearly-polarized femtosecond pulses creates a transient non-equilibrium lattice displacement along a certain direction. Here, the pump and probe pulse polarization dependence of the photo-induced ultrafast lattice dynamics in (GeTe)2/(Sb2Te3)4 interfacial phase change memory material is investigated under obliquely incident conditions. Drastic pump polarization dependence of the coherent phonon amplitude is observed when the probe polarization angle is parallel to the c-axis of the sample, while the pump polarization dependence is negligible when the probe polarization angle is perpendicular to the c-axis. The enhancement of phonon oscillation amplitude due to pump polarization rotation for a specific probe polarization angle is only found in the early time stage (≤2 ps). These results indicate that the origin of the pump and probe polarization dependence is dominantly attributable to the anisotropically-formed photo-excited carriers which cause the directional lattice dynamics.

Coherent gigahertz phonons in Ge2Sb2Te5 phase-change materials.

Using ≈40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge2Sb2Te5 (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of ≈5 mJ cm(-2), the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al 1986 (Phys. Rev. B 34 4129). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons.

Multicomponent chalcogenides, such as quasi-binary GeTe-Sb2Te3 alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge2Sb2Te5 (GST) in particular has proven to be one of the best-performing materials, whose reliability allows more than 10(6) write-erase cycles. Despite these industrial applications, the fundamental kinetics of rapid phase change in GST remain controversial, and active debate continues over the ultimate speed limit. Here we explore ultrafast structural transformation in a photoexcited GST superlattice, where GeTe and Sb2Te3 are spatially separated, using coherent phonon spectroscopy with pump-pump-probe sequences. By analysing the coherent phonon spectra in different time regions, complex structural dynamics upon excitation are observed in the GST superlattice (but not in GST alloys), which can be described as the mixing of Ge sites from two different coordination environments. Our results suggest the possible applicability of GST superlattices for ultrafast switching devices.

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices.

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.

Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe)2(Sb2Te3)1]n topological superlattices.

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials.

A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among chalcogenide phase-change materials, Ge2Sb2Te5 (GST) is most widely used because of its reliability. We use a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Depending on the parameters of the second pump-pulse, ultrafast nonthermal phase-change occurred within only few-cycles (≈1 picosecond) of the coherent motion corresponding to a GeTe4 local vibration. Using the ultrafast switch in chalcogenide alloy memory could lead to a major paradigm shift in memory devices beyond the current generation of silicon-based flash-memory.

Interaction of coherent phonons with defects and elementary excitations.

We present an overview of the feasibility of using coherent phonon spectroscopy to study interaction dynamics of excited lattice vibrations with their environments. By exploiting the features of coherent phonons with a pump-probe technique, one can study lattice motions in a sub-picosecond time range. The dephasing properties tell us not only about interaction dynamics with carriers (electrons and holes) or thermal phonons but also about point defects in crystals. Modulations of the coherent phonon amplitude by more than two modes are closely related to phonon-carrier or phonon-phonon interferences. Related to this phenomenon, formation of coherent phonons at higher harmonics gives direct evidence for phonon-phonon couplings. A combined study of coherent phonons and ultrafast carrier response can be useful for understanding phonon-carrier interaction dynamics. For metals like zinc, nonequilibrium electrons may dominate the dynamics of both relaxation and generation of coherent phonons. The frequency chirp of coherent phonons can be a direct measure of how and when phonon-phonon and phonon-carrier couplings occur. Carbon nanotubes show some complicated behavior due to the existence of many modes with different symmetries, resulting in superposition or interference. To illustrate one of the most interesting applications, the selective excitation of specific phonon modes through the use of a pulse train technique is shown.

Coherent optical control of the ultrafast dephasing of phonon-plasmon coupling in a polar semiconductor using a pulse train of below-band-gap excitation.

In the investigation of the nonequilibrium ultrafast dynamics of the coherent phonon-plasmon coupled modes in a polar semiconductor, we predict theoretically that their coherent oscillations can be efficiently controlled by using the pulse train of below-band-gap excitation. The dynamics of the coherent modes are driven by the virtual electron-hole pairs, which would avoid dephasing sources such as accumulation of photoexcited charges and spontaneous emission. This implies that carrier mobility can also be efficiently controlled and dramatically enhanced by synchronizing the pulse train with the coherent oscillation of the carrier-relevant coupled mode.

Ultrafast Fano resonance between optical phonons and electron-hole pairs at the onset of quasiparticle generation in a semiconductor.

Based on the many-body time-dependent approach applied to the ultrafast time region, we investigate the dynamics of creation of an optical phonon incorporating with the electron-hole continuum in a semiconductor. In the transient Fano resonance, due to an interference between those sharp (optical phonon) and continuum (electron-hole pair) quasiparticles, we find the robust destructive interference at birth of them, i.e., tau approximately 0 if the created phonon is coherent under the irradiation of ultrashort optical pulses. The origin is found to be the potential scattering of the electron-hole pair by the q=0 coherent phonon. This finding agrees well with the recent experiment.

Observation of an amplitude collapse and revival of chirped coherent phonons in bismuth.

We have studied the A(1g) coherent phonons in bismuth generated by high fluence ultrashort laser pulses. We observed that the nonlinear regime, where the phonons' oscillation parameters depend on fluence, consists of subregimes with distinct dynamics. Just after entering the nonlinear regime, the phonons become chirped. Increasing the fluence further leads to the emergence of a collapse and revival, which next turns into multiple collapses and revivals. This is explained by the dynamics of a wave packet in an anharmonic potential, where the packet periodically breaks up and reconstitutes in its original form, giving convincing evidence that the phonons are in a quantum state, with no classical analog.