RESUMO
Due to the low atomic number of B, hexagonal boron nitride (hBN) has a large neutron scattering cross section and, therefore, is an ideal material for the realization of solid-state neutron detector. Here we apply the THz time-domain spectroscopy to study the effect of neutron irradiation on electronic properties of pyrolytic (PBN) and hot-pressed boron nitride (HBN). The key electronic parameters of these samples, such as the static dielectric constant ε b, the effective carrier density N*, the carrier relaxation time τ, and the electronic localization factor α, are determined optically, and their dependences upon the neutron irradiation fluence (NIF) are examined. We find that for hBN,N* and ε b decrease while τ and |α| increase with increasing NIF. These results can be used to further understand the neutron irradiation effects on the basic physical properties of hBN material. We believe that the results obtained from this work can benefit to the design and application of hBN material for neutron detectors.
RESUMO
X-ray detectors based on conventional semiconductors with large atomic numbers are suffering from the poor stability under a high dose rate of ionizing irradiation. In this work, we demonstrate that a wide band gap ceramic-boron nitride with small atomic numbers could be used for sensitive X-ray detection. Boron nitride samples showed excellent resistance to ionizing radiation, which have been systematically studied with the neutron- and electron-aging experiments. Then, we fully analyzed the influence of these aging effects on the fundamental properties of boron nitride. Interestingly, we found that the boron nitride samples could maintain relatively good charge transport properties even after large dose of neutron irradiation. The fabricated X-ray detectors showed decent performance metrics, and the neutron-aged boron nitride even showed improved operational stability under continuous X-ray irradiation, suggesting the great potential for real applications.
