Reliability of Poisson-Nernst-Planck Anomalous Models for Impedance Spectroscopy.

We investigate possible connections between two different implementations of the Poisson-Nernst-Planck (PNP) anomalous models used to analyze the electrical response of electrolytic cells. One of them is built in the framework of the fractional calculus and considers integro-differential boundary conditions also formulated by using fractional derivatives; the other one is an extension of the standard PNP model presented by Barsoukov and Macdonald, which can also be related to equivalent circuits containing constant phase elements (CPEs). Both extensions may be related to an anomalous diffusion with subdiffusive characteristics through the electrical conductivity and are able to describe the experimental data presented here. Furthermore, we apply the Bayesian inversion method to extract the parameter of interest in the analytical formulas of impedance. To resolve the corresponding inverse problem, we use the delayed-rejection adaptive-Metropolis algorithm (DRAM) in the context of Markov-chain Monte Carlo (MCMC) algorithms to find the posterior distributions of the parameter and the corresponding confidence intervals.

Optimization of nanowire DNA sensor sensitivity using self-consistent simulation.

In order to facilitate the rational design and the characterization of nanowire field-effect sensors, we have developed a model based on self-consistent charge-transport equations combined with interface conditions for the description of the biofunctionalized surface layer at the semiconductor/electrolyte interface. Crucial processes at the interface, such as the screening of the partial charges of the DNA strands and the influence of the angle of the DNA strands with respect to the nanowire, are computed by a Metropolis Monte Carlo algorithm for charged molecules at interfaces. In order to investigate the sensing mechanism of the device, we have computed the current­voltage characteristics, the electrostatic potential and the concentrations of electrons and holes. Very good agreement with measurements has been found and optimal device parameters have been identified. Our approach provides the capability to study the device sensitivity, which is of fundamental importance for reliable sensing.