Relationship between the Annealing Temperature and the Presence of PbI2 Platelets at the Surfaces of Slot-Die-Coated Triple-Halide Perovskite Thin Films.

We investigated triple-halide perovskite (THP) absorber layers with 5 mol % MAPbCl3 added to the double-halide perovskite (Cs0.22FA0.78)Pb(I0.85Br0.15)3. As a deposition method, a highly scalable printing technique, slot-die coating, with a subsequent annealing step was used. We found a strong power conversion efficiency (PCE) dependence of the corresponding solar cells on the annealing temperature. The device performance deteriorated when increasing the annealing temperature from 125 to 170 °C, mainly via losses in the open-circuit voltage (Voc) and in the fill factor (FF). To understand the mechanisms behind this performance loss, extensive characterizations were performed on both, the THP thin films and the completed solar-cell stacks, as a function of annealing temperature. Correlative scanning electron microscopy analyses, i.e., electron backscatter diffraction, energy-dispersive X-ray spectroscopy, and cathodoluminescence, in addition to X-ray diffraction and photoluminescence, confirmed the presence of PbI2 platelets on the surface of the THP thin films. Moreover, the area fraction of the PbI2 platelets on the film surface increased with increasing annealing temperature. The deteriorated device performance when the annealing temperature is increased from 125 to 170 °C is explained by the increased series resistance and increased interface recombination caused by the PbI2 platelets, leading to decreased Voc and FF values of the solar-cell devices. Thus, the correlative analyses provided insight into microscopic origins of the efficiency losses.

Photogenerated charge transfer in Dion-Jacobson type layered perovskite based on naphthalene diimide.

Incorporating organic semiconducting spacer cations into layered lead halide perovskite structures provides a powerful approach to mitigate the typical strong dielectric and quantum confinement effects by inducing charge-transfer between the organic and inorganic layers. Herein we report the synthesis and characterization of thin films of novel DJ-phase organic-inorganic layered perovskite semiconductors using a naphthalene diimide (NDI) based divalent spacer cation, which is shown to accept photogenerated electrons from the inorganic layer. With alkyl chain lengths of 6 carbons, an NDI-based thin film exhibited electron mobility (based on space charge-limited current for quasi-layered 〈n〉 = 5 material) was found to be as high as 0.03 cm2 V-1 s-1 with no observable trap-filling region suggesting trap passivation by the NDI spacer cation.

Internal electric fields control triplet formation in halide perovskite-sensitized photon upconverters.

Halide perovskite-based photon upconverters utilize perovskite thin films to sensitize triplet exciton formation in a small-molecule layer, driving triplet-triplet annihilation upconversion. Despite having excellent carrier mobility, these systems suffer from inefficient triplet formation at the perovskite/annihilator interface. We studied triplet formation in formamidinium-methylammonium lead iodide/rubrene bilayers using photoluminescence and surface photovoltage methods. By studying systems constructed on glass as well as hole-selective substrates, comprising self-assembled layers of the carbazole derivative 2PACz ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid) on indium-doped tin oxide, we saw how changes in the carrier dynamics induced by the hole-selective substrate perturbed triplet formation at the perovskite/rubrene interface. We propose that an internal electric field, caused by hole transfer at the perovskite/rubrene interface, strongly affects triplet exciton formation, accelerating exciton-forming electron-hole encounters at the interface but also limiting the hole density in rubrene at high excitation densities. Controlling this field is a promising path to improving triplet formation in perovskite/annihilator upconverters.

Pyridine Controlled Tin Perovskite Crystallization.

Controlling the crystallization of perovskite in a thin film is essential in making solar cells. Processing tin-based perovskite films from solution is challenging because of the uncontrollable faster crystallization of tin than the most used lead perovskite. The best performing devices are prepared by depositing perovskite from dimethyl sulfoxide because it slows down the assembly of the tin-iodine network that forms perovskite. However, while dimethyl sulfoxide seems the best solution to control the crystallization, it oxidizes tin during processing. This work demonstrates that 4-(tert-butyl) pyridine can replace dimethyl sulfoxide to control the crystallization without oxidizing tin. We show that tin perovskite films deposited from pyridine have a 1 order of magnitude lower defect density, which promotes charge mobility and photovoltaic performance.

Slot-Die Coated Triple-Halide Perovskites for Efficient and Scalable Perovskite/Silicon Tandem Solar Cells.

Wide bandgap halide perovskite materials show promising potential to pair with silicon bottom cells. To date, most efficient wide bandgap perovskites layers are fabricated by spin-coating, which is difficult to scale up. Here, we report on slot-die coating for an efficient, 1.68 eV wide bandgap triple-halide (3halide) perovskite absorber, (Cs0.22FA0.78)Pb(I0.85Br0.15)3 + 5 mol % MAPbCl3. A suitable solvent system is designed specifically for the slot-die coating technique. We demonstrate that our fabrication route is suitable for tandem solar cells without phase segregation. The slot-die coated wet halide perovskite is dried by a "nitrogen (N2)-knife" with high reproducibility and avoiding antisolvents. We explore varying annealing conditions and identify parameters allowing crystallization of the perovskite film into large grains reducing charge collection losses and enabling higher current density. At 150 °C, an optimized trade-off between crystallization and the PbI2 aggregates on the film's top surface is found. Thus, we improve the cell stability and performance of both single-junction cells and tandems. Combining the 3halide top cells with a 120 µm thin saw damage etched commercial Czochralski industrial wafer, a 2-terminal monolithic tandem solar cell with a PCE of 25.2% on a 1 cm2 active area is demonstrated with fully scalable processes.

BaZrS3 Chalcogenide Perovskite Thin Films by H2S Sulfurization of Oxide Precursors.

The earth-abundant ternary compound BaZrS3, which crystallizes in the perovskite-type structure, has come into view as a promising candidate for photovoltaic applications. We present the synthesis and characterization of polycrystalline perovskite-type BaZrS3 thin films. BaZrO3 precursor layers were deposited by pulsed laser deposition and sulfurized at various temperatures in an argon-diluted H2S atmosphere. We observe increasing incorporation of sulfur for higher annealing temperatures, accompanied by a red shift of the absorption edge, with a bandgap of Eg = 1.99 eV and a large absorption strength >105 cm-1 obtained for sulfurization temperatures of 1000 °C. X-ray diffraction analysis and SEM indicate enhanced crystallization at the higher annealing temperatures, but no evidence for a crystalline solid solution between the BaZrO3 and BaZrS3 phases is found. The charge carrier sum mobility estimated from optical-pump-terahertz-probe spectroscopy indicates increasing mobilities with increasing sulfurization temperature, reaching maximum values of up to ∼2 cm2 V-1 s-1.

Monolithic perovskite/silicon tandem solar cell with >29% efficiency by enhanced hole extraction.

Tandem solar cells that pair silicon with a metal halide perovskite are a promising option for surpassing the single-cell efficiency limit. We report a monolithic perovskite/silicon tandem with a certified power conversion efficiency of 29.15%. The perovskite absorber, with a bandgap of 1.68 electron volts, remained phase-stable under illumination through a combination of fast hole extraction and minimized nonradiative recombination at the hole-selective interface. These features were made possible by a self-assembled, methyl-substituted carbazole monolayer as the hole-selective layer in the perovskite cell. The accelerated hole extraction was linked to a low ideality factor of 1.26 and single-junction fill factors of up to 84%, while enabling a tandem open-circuit voltage of as high as 1.92 volts. In air, without encapsulation, a tandem retained 95% of its initial efficiency after 300 hours of operation.

Water Adsorption Enhances Electrical Conductivity in Transparent P-Type CuI.

CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.

Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy.

We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.

Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy.

The mobilities of electrons and holes determine the applicability of any semiconductor, but their individual measurement remains a major challenge. Here, we show that time-resolved terahertz spectroscopy (TRTS) can distinguish the mobilities of minority and majority charge carriers independently of the doping-type and without electrical contacts. To this end, we combine the well-established determination of the sum of electron and hole mobilities from photo-induced THz absorption spectra with mobility-dependent ambipolar modeling of TRTS transients. The method is demonstrated on a polycrystalline Cu2ZnSnSe4 thin film and reveals a minority (electron) mobility of 128 cm2/V-s and a majority (hole) carrier mobility of 7 cm2/V-s in the vertical transport direction relevant for light emitting, photovoltaic and solar water splitting devices. Additionally, the TRTS analysis yields an effective bulk carrier lifetime of 4.4 ns, a surface recombination velocity of 6 * 104 cm/s and a doping concentration of ca. 1016 cm-3, thus offering the potential for contactless screen novel optoelectronic materials.

Facile Bulk Synthesis of π-Cubic SnS.

The cubic modification of binary tin sulfide (SnS) has gained significant interest as an earth-abundant, low-toxicity solar absorber material with a band gap close to the optimal value for the conversion of sunlight. We herein report a simple synthesis for the metastable material, which will allow more elaborate characterization methods to be used on this material, and present a full powder refinement of the material along with some preliminary results on the optical and thermal stability properties.

Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching.

The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.

Pain attenuation through mindfulness is associated with decreased cognitive control and increased sensory processing in the brain.

Pain can be modulated by several cognitive techniques, typically involving increased cognitive control and decreased sensory processing. Recently, it has been demonstrated that pain can also be attenuated by mindfulness. Here, we investigate the underlying brain mechanisms by which the state of mindfulness reduces pain. Mindfulness practitioners and controls received unpleasant electric stimuli in the functional magnetic resonance imaging scanner during a mindfulness and a control condition. Mindfulness practitioners, but not controls, were able to reduce pain unpleasantness by 22% and anticipatory anxiety by 29% during a mindful state. In the brain, this reduction was associated with decreased activation in the lateral prefrontal cortex and increased activation in the right posterior insula during stimulation and increased rostral anterior cingulate cortex activation during the anticipation of pain. These findings reveal a unique mechanism of pain modulation, comprising increased sensory processing and decreased cognitive control, and are in sharp contrast to established pain modulation mechanisms.

Investigation of mindfulness meditation practitioners with voxel-based morphometry.

Mindfulness meditators practice the non-judgmental observation of the ongoing stream of internal experiences as they arise. Using voxel-based morphometry, this study investigated MRI brain images of 20 mindfulness (Vipassana) meditators (mean practice 8.6 years; 2 h daily) and compared the regional gray matter concentration to that of non-meditators matched for sex, age, education and handedness. Meditators were predicted to show greater gray matter concentration in regions that are typically activated during meditation. Results confirmed greater gray matter concentration for meditators in the right anterior insula, which is involved in interoceptive awareness. This group difference presumably reflects the training of bodily awareness during mindfulness meditation. Furthermore, meditators had greater gray matter concentration in the left inferior temporal gyrus and right hippocampus. Both regions have previously been found to be involved in meditation. The mean value of gray matter concentration in the left inferior temporal gyrus was predictable by the amount of meditation training, corroborating the assumption of a causal impact of meditation training on gray matter concentration in this region. Results suggest that meditation practice is associated with structural differences in regions that are typically activated during meditation and in regions that are relevant for the task of meditation.

Differential engagement of anterior cingulate and adjacent medial frontal cortex in adept meditators and non-meditators.

This study investigated differences in brain activation during meditation between meditators and non-meditators. Fifteen Vipassana meditators (mean practice: 7.9 years, 2h daily) and fifteen non-meditators, matched for sex, age, education, and handedness, participated in a block-design fMRI study that included mindfulness of breathing and mental arithmetic conditions. For the meditation condition (contrasted to arithmetic), meditators showed stronger activations in the rostral anterior cingulate cortex and the dorsal medial prefrontal cortex bilaterally, compared to controls. Greater rostral anterior cingulate cortex activation in meditators may reflect stronger processing of distracting events. The increased activation in the medial prefrontal cortex may reflect that meditators are stronger engaged in emotional processing.