Room temperature wafer bonding through conversion of polysilazane into [Formula: see text].

Room temperature wafer bonding is a desirable approach for the packaging and assembly of diverse electronic devices. The formation of [Formula: see text] layer at the bonding interface is crucial for a reliable wafer bonding as represented by conventional bonding techniques such as hydrophilic bonding and glass frit bonding. This paper reports a novel concept of room temperature wafer bonding based on the conversion of polysilazane to [Formula: see text] at the bonding interface. As polysilazane is converted to [Formula: see text] by hydrolysis, in this work, adsorbed water is introduced to the bonding interface by plasma treatment, thereby facilitating the formation of [Formula: see text] at the wafer bonding interface. The experimental results indicate that the adsorbed water from the plasma treatment diffuses into the polysilazane layer and facilitates its hydrolysis and conversion. The proposed method demonstrates the successful wafer bonding at room temperature with high bond strength without interfacial voids. This technique will provide a new approach of bonding wafers at room temperature for electronics packaging.

Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging.

This study demonstrates room-temperature bonding using a getter layer for the vacuum packaging of microsystems. A thick Ti layer covered with an Au layer is utilized as a getter layer because it can absorb gas molecules in the package. Additionally, smooth Au surfaces can form direct bonds for hermetic sealing at room temperature. Direct bonding using a getter layer can simplify the vacuum packaging process; however, typical getter layers are rough in bonding formation. This study demonstrates two fabrication techniques for smooth getter layers. In the first approach, the Au/Ti layer is bonded to an Au layer on a smooth SiO2 template, and the Au/SiO2 interface is mechanically exfoliated. Although the root-mean-square roughness was reduced from 2.00 to 0.98 nm, the surface was still extremely rough for direct bonding. In the second approach, an Au/Ti/Au multilayer on a smooth SiO2 template is bonded with a packaging substrate, and the Au/SiO2 interface is exfoliated. The transferred Au/Ti/Au getter layer has a smooth surface with the root-mean-square roughness of 0.54 nm and could form wafer-scale direct bonding at room temperature. We believe that the second approach would allow a simple packaging process using direct bonding of the getter layer.

An Ultra-Compact MEMS Pirani Sensor for In-Situ Pressure Distribution Monitoring.

In this study, we designed a microelectromechanical system (MEMS) Pirani vacuum sensor with a compact size. Specifically, the sensor was successfully fabricated based on the Pirani principle and using a commercial eight-inch MEMS foundry process. The sensor fabrication process was carried out using only four photomasks and the proposed sensor had an ultra-compact fabricated size (<2.2 × 2.2 mm2). A vacuum measurement system was set up to comprehensively evaluate the fabricated sensors. The results demonstrated that the MEMS Pirani vacuum sensor has a high responsivity in the low-pressure domain from 100 Pa. The proposed sensor with a 953.0-Ω heater exhibited an average responsivity of 11.9 mV/Pa in the preferred range of 100 to 7 Pa and 96.0 mV/Pa in the range of 7 to 1 Pa. The sensor may be potentially suitable in many applications, such as vacuum indicators for processing equipment, health monitoring systems for social infrastructure, and medical and health applications.

Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging.

In this study, we developed a metal multilayer that can provide hermetic sealing after degassing the assemblies and absorbing the residual gases in the package. A package without a leak path was obtained by the direct bonding of the Au/Pt/Ti layers. After packaging, annealing at 450 °C caused thermal diffusion of the Ti underlayer atoms to the inner surface, which led to absorption of the residual gas molecules. These results indicated that a wafer coated with a Au/Pt/Ti layer can provide hermetic sealing and absorb residual gases, which can simplify vacuum packaging processes in the electronics industry.

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions.

An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding.

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15-500 nm) and surface roughness (0.3-1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

Residual Stress in Lithium Niobate Film Layer of LNOI/Si Hybrid Wafer Fabricated Using Low-Temperature Bonding Method.

This paper focuses on the residual stress in a lithium niobate (LN) film layer of a LN-on-insulator (LNOI)/Si hybrid wafer. This stress originates from a large mismatch between the thermal expansion coefficients of the layers. A modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO2 layers, which is sufficient to withstand the wafer thinning to a LN thickness of approximately 5 µm using conventional mechanical polishing. Using micro-Raman spectroscopy, the residual stress in the bonded LN film in this trilayered (LN/SiO2/Si) structure was investigated. The measured residual tensile stress in the LN film layer was approximately 155 MPa, which was similar to the value calculated by stress analysis. This study will be useful for the development of various hetero-integrated LN micro-devices, including silicon-based, LNOI-integrated photonic devices.

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au⁻Au Bonding Using Ultrathin Au Films.

Au⁻Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au⁻Au bonding using ultrathin Au films (<50 nm) in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Destructive razor blade testing revealed that the bonding strength of samples obtained using Ar plasma treatment was higher than the strength of bulk Si (surface energy of bulk Si: 2.5 J/m²), while that of samples obtained using O2 plasma treatment was low (surface energy: 0.1⁻0.2 J/m²). X-ray photoelectron spectroscopy analysis revealed that a gold oxide (Au2O3) layer readily formed with O2 plasma treatment, and this layer impeded Au⁻Au bonding. Thermal desorption spectroscopy analysis revealed that Au2O3 thermally desorbed around 110 °C. Annealing of O2 plasma-treated samples up to 150 °C before bonding increased the bonding strength from 0.1 to 2.5 J/m² due to Au2O3 decomposition.

Grasping Force Control for a Robotic Hand by Slip Detection Using Developed Micro Laser Doppler Velocimeter.

The purpose of this paper is to show the feasibility of grasping force control by feeding back signals of the developed micro-laser Doppler velocimeter (µ-LDV) and by discriminating whether a grasped object is slipping or not. LDV is well known as a high response surface velocity sensor which can measure various surfaces-such as metal, paper, film, and so on-thus suggesting the potential application of LDV as a slip sensor for grasping various objects. However, the use of LDV as a slip sensor has not yet been reported because the size of LDVs is too large to be installed on a robotic fingertip. We have solved the size problem and enabled the performance of a feasibility test with a few-millimeter-scale LDV referred to as micro-LDV (µ-LDV) by modifying the design which was adopted from MEMS (microelectromechanical systems) fabrication process. In this paper, by applying our developed µ-LDV as a slip sensor, we have successfully demonstrated grasping force control with three target objects-aluminum block, wood block, and white acrylic block-considering that various objects made of these materials can be found in homes and factories, without grasping force feedback. We provide proofs that LDV is a new promising candidate slip sensor for grasping force control to execute target grasping.

Detection of Site-Specific Blood Flow Variation in Humans during Running by a Wearable Laser Doppler Flowmeter.

Wearable wireless physiological sensors are helpful for monitoring and maintaining human health. Blood flow contains abundant physiological information but it is hard to measure blood flow during exercise using conventional blood flowmeters because of their size, weight, and use of optic fibers. To resolve these disadvantages, we previously developed a micro integrated laser Doppler blood flowmeter using microelectromechanical systems technology. This micro blood flowmeter is wearable and capable of stable measurement signals even during movement. Therefore, we attempted to measure skin blood flow at the forehead, fingertip, and earlobe of seven young men while running as a pilot experiment to extend the utility of the micro blood flowmeter. We measured blood flow in each subject at velocities of 6, 8, and 10 km/h. We succeeded in obtaining stable measurements of blood flow, with few motion artifacts, using the micro blood flowmeter, and the pulse wave signal and motion artifacts were clearly separated by conducting frequency analysis. Furthermore, the results showed that the extent of the changes in blood flow depended on the intensity of exercise as well as previous work with an ergometer. Thus, we demonstrated the capability of this wearable blood flow sensor for measurement during exercise.

Comparable accuracy of micro-electromechanical blood flowmetry-based analysis vs. electrocardiography-based analysis in evaluating heart rate variability.

BACKGROUND: Because the conventional evaluation of autonomic nervous system (ANS) function inevitably uses long-lasting uncomfortable electrocardiogram (ECG) recording, a more simplified and comfortable analysis system has been sought for this purpose. The feasibility of using a portable micro-electromechanical system (MEMS) blood flowmeter to analyze heart rate variability (HRV) for evaluating ANS function was thus examined. METHODS AND RESULTS: Measurements of the R-R interval (TRR) derived from an ECG, simultaneously with the pulse wave interval (TPP) derived from a MEMS blood flowmeter, in 8 healthy subjects was performed and resultant HRV variables in time and frequency domains were compared. The TRR- and TPP-derived variables were strongly correlated (coefficients of regression for low frequency (LF), high frequency (HF), and LF/HF of 1.1, 0.66, and 0.35, respectively; corresponding coefficients of determination of 0.92, 0.63, and 0.91, respectively (P<0.01)). In addition, the values of LF, HF, and LF/HF, as analyzed using TPP, changed significantly from the supine to the standing position in another 6 subjects. CONCLUSIONS: Miniaturized-MEMS blood flowmetry can be used to perform HRV analysis for the evaluation of ANS function, which is as accurate as analysis based on ECG within comparable tolerances. As MEMS blood flowmetry can more easily and comfortably record physiological variables for longer durations than ECG recording, and can further capture skin blood flow information, this device has great potential to be used in a wider area of physiological analyses.

Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method.

This paper demonstrates the application of ultra-precision cutting to the fabrication of ridged LiNbO3 waveguides for use in low-loss photonic integrated circuits. Ridged waveguides with sidewall verticality of 88° and ultra-smooth sidewalls were obtained in LiNbO3 crystals using this technique. In addition, the possibility of fabricating bent ridged waveguides via this mechanical micromachining method was examined. The root mean square surface roughness of the machined sidewall was 4.5 nm over an area of 2.5 × 10 µm, which is sufficiently low so as to minimize scattering losses of guided light. The propagation loss of the ridged waveguide produced during this work was well below 1 dB/cm at a wavelength of 1550 nm. The present technique should have significant applicability to the micromachining of ferroelectric materials and the fabrication of highly confined optical waveguides such as ridged waveguides and photonic wires.

Development of a wireless sensor for the measurement of chicken blood flow using the laser Doppler blood flow meter technique.

Here, we report the development of an integrated laser Doppler blood flow micrometer for chickens. This sensor weighs only 18 g and is one of the smallest-sized blood flow meters, with no wired line, these are features necessary for attaching the sensor to the chicken. The structure of the sensor chip consists of two silicon cavities with a photo diode and a laser diode, which was achieved using the microelectromechanical systems technique, resulting in its small size and significantly low power consumption. In addition, we introduced an intermittent measuring arrangement in the measuring system to reduce power consumption and to enable the sensor to work longer. We were successfully able to measure chicken blood flow for five consecutive days, and discovered that chicken blood flow shows daily fluctuations.

Useful method to monitor the physiological effects of alcohol ingestion by combination of micro-integrated laser Doppler blood flow meter and arm-raising test.

Alcohol has a variety of effects on the human body, affecting both the sympathetic and parasympathetic nervous system. We examined the peripheral blood flow of alcohol drinkers using a micro-integrated laser Doppler blood flow meter (micro-electromechanical system blood flow sensor). An increased heart rate and blood flow was recorded at the earlobe after alcohol ingestion, and we observed strong correlation between blood flow, heart rate, and breath alcohol content in light drinkers; but not heavy drinkers. We also found that the amplitude of pulse waves measured at the fingertip during an arm-raising test significantly decreased on alcohol consumption, regardless of the individual's alcohol tolerance. Our micro-electromechanical system blood flow sensor successfully detected various physiological changes in peripheral blood circulation induced by alcohol consumption.

Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates.

The air-gap structure between integrated LiNbO(3) optical modulators and micromachined Si substrates is reported for high-speed optoelectronic systems. The calculated and experimental results show that the high permittivity of the Si substrate decreases the resonant modulation frequency to 10 GHz LiNbO(3) resonant-type optical modulator chips on the Si substrate. To prevent this substrate effect, an air-gap was formed between the LiNbO(3) modulator and the Si substrate. The ability to fabricate the air-gap structure was demonstrated using low-temperature flip-chip bonding (100 °C) and a Si micromachining process, and its performance was experimentally verified.

Integrated laser Doppler blood flowmeter designed to enable wafer-level packaging.

The authors propose a new sensor structure for an integrated laser Doppler blood flowmeter that consists of two silicon cavities with a PD and laser diode inside each cavity. A silicon lid formed with a converging microlens completes the package. This structure, which was achieved using micromachining techniques, features reduced optical power loss in the sensor, resulting in its small size and significantly low power consumption. Measurements using a model tissue blood flow system confirmed that the new sensor had high linearity and a wide dynamic range for measuring tissue blood flow.