Visualizing the atomic-scale origin of metallic behavior in Kondo insulators.

A Kondo lattice is often electrically insulating at low temperatures. However, several recent experiments have detected signatures of bulk metallicity within this Kondo insulating phase. In this study, we visualized the real-space charge landscape within a Kondo lattice with atomic resolution using a scanning tunneling microscope. We discovered nanometer-scale puddles of metallic conduction electrons centered around uranium-site substitutions in the heavy-fermion compound uranium ruthenium silicide (URu2Si2) and around samarium-site defects in the topological Kondo insulator samarium hexaboride (SmB6). These defects disturbed the Kondo screening cloud, leaving behind a fingerprint of the metallic parent state. Our results suggest that the three-dimensional quantum oscillations measured in SmB6 arise from Kondo-lattice defects, although we cannot exclude other explanations. Our imaging technique could enable the development of atomic-scale charge sensors using heavy-fermion probes.

Demonstration of Tunable Three-Body Interactions between Superconducting Qubits.

Nonpairwise multiqubit interactions present a useful resource for quantum information processors. Their implementation would facilitate more efficient quantum simulations of molecules and combinatorial optimization problems, and they could simplify error suppression and error correction schemes. Here, we present a superconducting circuit architecture in which a coupling module mediates two-local and three-local interactions between three flux qubits by design. The system Hamiltonian is estimated via multiqubit pulse sequences that implement Ramsey-type interferometry between all neighboring excitation manifolds in the system. The three-local interaction is coherently tunable over several MHz via the coupler flux biases and can be turned off, which is important for applications in quantum annealing, analog quantum simulation, and gate-model quantum computation.

Electric polarization switching in an atomically thin binary rock salt structure.

Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions 1-3 , although this effect can be circumvented by specially designed interfaces 4 . Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry 5-8 . Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

Guided Molecular Assembly on a Locally Reactive 2D Material.

Atomically precise engineering of the position of molecular adsorbates on surfaces of 2D materials is key to their development in applications ranging from catalysis to single-molecule spintronics. Here, stable room-temperature templating of individual molecules with localized electronic states on the surface of a locally reactive 2D material, silicene grown on ZrB2 , is demonstrated. Using a combination of scanning tunneling microscopy and density functional theory, it is shown that the binding of iron phthalocyanine (FePc) molecules is mediated via the strong chemisorption of the central Fe atom to the sp3 -like dangling bond of Si atoms in the linear silicene domain boundaries. Since the planar Pc ligand couples to the Fe atom mostly through the in-plane d orbitals, localized electronic states resembling those of the free molecule can be resolved. Furthermore, rotation of the molecule is restrained because of charge rearrangement induced by the bonding. These results highlight how nanoscale changes can induce reactivity in 2D materials, which can provide unique surface interactions for enabling novel forms of guided molecular assembly.

Publisher's Note: Gating Classical Information Flow via Equilibrium Quantum Phase Transitions [Phys. Rev. Lett. 118, 147203 (2017)].

This corrects the article DOI: 10.1103/PhysRevLett.118.147203.

Gating Classical Information Flow via Equilibrium Quantum Phase Transitions.

The development of communication channels at the ultimate size limit of atomic scale physical dimensions will make the use of quantum entities an imperative. In this regime, quantum fluctuations naturally become prominent and are generally considered to be detrimental. Here, we show that for spin-based information processing, these fluctuations can be uniquely exploited to gate the flow of classical binary information across a magnetic chain in thermal equilibrium. Moreover, this information flow can be controlled with a modest external magnetic field that drives the system through different many-body quantum phases in which the orientation of the final spin does or does not reflect the orientation of the initial input. Our results are general for a wide class of anisotropic spin chains that act as magnetic cellular automata and suggest that quantum phase transitions play a unique role in driving classical information flow at the atomic scale.

Controlling electronic access to the spin excitations of a single molecule in a tunnel junction.

Spintronic phenomena underpin new device paradigms for data storage and sensing. Scaling these down to the single molecule level requires controlling the properties of current-carrying molecular orbitals to enable access to spin states through phenomena such as inelastic electron tunnelling. Here we show that the spintronic properties of a tunnel junction containing a single molecule can be controlled using the local environment as a pseudo-gate. For tunnelling through iron phthalocyanine (FePc) on an insulating copper nitride (Cu2N) monolayer above Cu(001), we find that spin transitions may be strongly excited depending on the binding site of the central Fe atom. Different interactions between the Fe and the underlying Cu or N atoms shift the Fe d orbitals with respect to the Fermi energy and control the relative strength of the spin excitations; this effect is captured in a simple co-tunnelling model. This work demonstrates the importance of the atomic-scale environment for the development of single molecule spintronic devices.

Sub-molecular modulation of a 4f driven Kondo resonance by surface-induced asymmetry.

Coupling between a magnetic impurity and an external bath can give rise to many-body quantum phenomena, including Kondo and Hund's impurity states in metals, and Yu-Shiba-Rusinov states in superconductors. While advances have been made in probing the magnetic properties of d-shell impurities on surfaces, the confinement of f orbitals makes them difficult to access directly. Here we show that a 4f driven Kondo resonance can be modulated spatially by asymmetric coupling between a metallic surface and a molecule containing a 4f-like moment. Strong hybridization of dysprosium double-decker phthalocyanine with Cu(001) induces Kondo screening of the central magnetic moment. Misalignment between the symmetry axes of the molecule and the surface induces asymmetry in the molecule's electronic structure, spatially mediating electronic access to the magnetic moment through the Kondo resonance. This work demonstrates the important role that molecular ligands have in mediating electronic and magnetic coupling and in accessing many-body quantum states.

Tunable magnetoresistance in an asymmetrically coupled single-molecule junction.

Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single-molecule level may enable novel spintronic devices. Here, we report magnetoresistance in a single-molecule junction arising from negative differential resistance that shifts in a magnetic field at a rate two orders of magnitude larger than Zeeman shifts. This sensitivity to the magnetic field produces two voltage-tunable forms of magnetoresistance, which can be selected via the applied bias. The negative differential resistance is caused by transient charging of an iron phthalocyanine (FePc) molecule on a single layer of copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltages corresponding to the alignment of sharp resonances in the filled and empty molecular states with the Cu(001) Fermi energy. An asymmetric voltage-divider effect enhances the apparent voltage shift of the negative differential resistance with magnetic field, which inherently is on the scale of the Zeeman energy. These results illustrate the impact that asymmetric coupling to metallic electrodes can have on transport through molecules, and highlight how this coupling can be used to develop molecular spintronic applications.

High-temperature antiferromagnetism in molecular semiconductor thin films and nanostructures.

The viability of dilute magnetic semiconductors in applications is linked to the strength of the magnetic couplings, and room temperature operation is still elusive in standard inorganic systems. Molecular semiconductors are emerging as an alternative due to their long spin-relaxation times and ease of processing, but, with the notable exception of vanadium-tetracyanoethylene, magnetic transition temperatures remain well below the boiling point of liquid nitrogen. Here we show that thin films and powders of the molecular semiconductor cobalt phthalocyanine exhibit strong antiferromagnetic coupling, with an exchange energy reaching 100 K. This interaction is up to two orders of magnitude larger than in related phthalocyanines and can be obtained on flexible plastic substrates, under conditions compatible with routine organic electronic device fabrication. Ab initio calculations show that coupling is achieved via superexchange between the singly occupied a1g () orbitals. By reaching the key milestone of magnetic coupling above 77 K, these results establish quantum spin chains as a potentially useable feature of molecular films.

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy.

We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2. When imaged in occupied states, the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography and have maximum intensities lying along particular crystallographic orientations. In empty-state images the features all exhibit long-range circular protrusions. The images are consistent with buried dopants that are in the electrically neutral (D0) charge state when imaged in filled states, but become positively charged (D+) through electrostatic ionization when imaged under empty-state conditions, similar to previous observations of acceptors in GaAs. Density functional theory calculations predict that As dopants in the third layer of the sample induce two states lying just below the conduction-band edge, which hybridize with the surface structure creating features with the surface symmetry consistent with our STM images. The As2 features have the surprising characteristic of appearing as a protrusion in filled-state images and an isotropic depression in empty-state images, suggesting they are negatively charged at all biases. We discuss the possible origins of this feature.

Control of single-spin magnetic anisotropy by exchange coupling.

The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be affected strongly by this interaction. Although this can lead to unwanted consequences, such as causing decoherence in qubits used for quantum computation, it can also be exploited as a probe of the environment. For example, magnetic resonance imaging is based on the dependence of the spin relaxation times of protons in water molecules in a host's tissue. Here we show that the excitation energy of a single spin, which is determined by magnetocrystalline anisotropy and controls its stability and suitability for use in magnetic data-storage devices, can be modified by varying the exchange coupling of the spin to a nearby conductive electrode. Using scanning tunnelling microscopy and spectroscopy, we observe variations up to a factor of two of the spin excitation energies of individual atoms as the strength of the spin's coupling to the surrounding electronic bath changes. These observations, combined with calculations, show that exchange coupling can strongly modify the magnetic anisotropy. This system is thus one of the few open quantum systems in which the energy levels, and not just the excited-state lifetimes, can be renormalized controllably. Furthermore, we demonstrate that the magnetocrystalline anisotropy, a property normally determined by the local structure around a spin, can be tuned electronically. These effects may play a significant role in the development of spintronic devices in which an individual magnetic atom or molecule is coupled to conducting leads.

Temperature- and Light-Induced Spin Crossover Observed by X-ray Spectroscopy on Isolated Fe(II) Complexes on Gold.

Using X-ray absorption techniques, we show that temperature- and light-induced spin crossover properties are conserved for a submonolayer of the [Fe(H2B(pz)2)2(2,2'-bipy)] complex evaporated onto a Au(111) surface. For a significant fraction of the molecules, we see changes in the absorption at the L2,3 edges that are consistent with those observed in bulk and thick film references. Assignment of these changes to spin crossover is further supported by multiplet calculations to simulate the X-ray absorption spectra. As others have observed in experiments on monolayer coverages, we find that many molecules in our submonolayer system remain pinned in one of the two spin states. Our results clearly demonstrate that temperature- and light-induced spin crossover is possible for isolated molecules on surfaces but that interactions with the surface may play a key role in determining when this can occur.

Site-dependent ambipolar charge states induced by group V atoms in a silicon surface.

We report that solitary bismuth and antimony atoms, incorporated at Si(111) surfaces, induce either positive or negative charge states depending on the site of the surface reconstruction in which they are located. This is in stark contrast to the hydrogenic donors formed by group V atoms in silicon bulk crystal and therefore has strong implications for the design and fabrication of future highly scaled electronic devices. Using scanning tunnelling microscopy (STM) and density functional theory (DFT) we determine the reconstructions formed by different group V atoms in the Si(111)2 × 1 surface. Based on these reconstructions a model is presented that explains the polarity as well as the location of the observed charges in the surface. Using locally resolved scanning tunnelling spectroscopy we are furthermore able to map out the spatial extent over which a donor atom influences the unoccupied surface and bulk electronic states near the Fermi-level. The results presented here therefore not only show that a dopant atom can induce both positive and negative charges but also reveal the nature of the local electronic structure in the region of the silicon surface where an individual donor atom is present.

Activation energy paths for graphene nucleation and growth on Cu.

The synthesis of wafer-scale single crystal graphene remains a challenge toward the utilization of its intrinsic properties in electronics. Until now, the large-area chemical vapor deposition of graphene has yielded a polycrystalline material, where grain boundaries are detrimental to its electrical properties. Here, we study the physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper, providing new insights necessary for the engineering synthesis of wafer-scale single crystals. Graphene arises from the crystallization of a supersaturated fraction of carbon-adatom species, and its nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. As the energetics of these phenomena varies with temperature, the nucleation activation energies can span over a wide range (1-3 eV) leading to a rational prediction of the individual nuclei size and density distribution. The growth-limiting step was found to be the attachment of carbon-adatom species to the graphene edges, which was independent of the Cu crystalline orientation.

Spin texture and magnetoroton excitations at nu=1/3.

Neutral spin texture (ST) excitations at nu=1/3 are directly observed for the first time by resonant inelastic light scattering. They are determined to involve two simultaneous spin flips. At low magnetic fields, the ST energy is below that of the magnetoroton minimum. With increasing in-plane magnetic field these mode energies cross at a critical ratio of the Zeeman and Coulomb energies of eta(c)=0.020+/-0.001. Surprisingly, the intensity of the ST mode grows with temperature in the range in which the magnetoroton modes collapse. The temperature dependence is interpreted in terms of a competition between coexisting phases supporting different excitations. We consider the role of the ST excitations in activated transport at nu=1/3.

The force needed to move an atom on a surface.

Manipulation of individual atoms and molecules by scanning probe microscopy offers the ability of controlled assembly at the single-atom scale. However, the driving forces behind atomic manipulation have not yet been measured. We used an atomic force microscope to measure the vertical and lateral forces exerted on individual adsorbed atoms or molecules by the probe tip. We found that the force that it takes to move an atom depends strongly on the adsorbate and the surface. Our results indicate that for moving metal atoms on metal surfaces, the lateral force component plays the dominant role. Furthermore, measuring spatial maps of the forces during manipulation yielded the full potential energy landscape of the tip-sample interaction.