Low-Temperature Emission Dynamics of Methylammonium Lead Bromide Hybrid Perovskite Thin Films at the Sub-Micrometer Scale.

We study the low-temperature (T = 4.7 K) emission dynamics of a thin film of methylammonium lead bromide (MAPbBr3), prepared via the anti-solvent method. Using intensity-dependent (over 5 decades) hyperspectral microscopy under quasi-resonant (532 nm) continuous wave excitation, we revealed spatial inhomogeneities in the thin film emission. This was drastically different at the band-edge (∼550 nm, sharp peaks) than in the emission tail (∼568 nm, continuum of emission). We are able to observe regions of the film at the micrometer scale where emission is dominated by excitons, in between regions of trap emission. Varying the density of absorbed photons by the MAPbBr3 thin films, two-color fluorescence lifetime imaging microscopy unraveled the emission dynamics: a fast, resolution-limited (∼200 ps) monoexponential tangled with a stretched exponential decay. We associate the first to the relaxation of excitons and the latter to trap emission dynamics. The obtained stretching exponents can be interpreted as the result of a two-dimensional electron diffusion process: Förster resonant transfer mechanism. Furthermore, the non-vanishing fast monoexponential component even in the tail of the MAPbBr3 emission indicates the subsistence of localized excitons. Finally, we estimate the density of traps in MAPbBr3 thin films prepared using the anti-solvent method at n∼1017 cm-3.

Doping MAPbBr3 hybrid perovskites with CdSe/CdZnS quantum dots: from emissive thin films to hybrid single-photon sources.

We report the first doping of crystalline methyl-ammonium lead bromide perovskite (MAPbBr3) films with CdSe/CdZnS core/shell quantum dots (QDs), using a soft-chemistry approach that preserves their high quantum yield and other remarkable luminescence properties. Our approach produces MAPbBr3 films of around 100 nm thickness, doped at volume ratios between 0.01 and 1% with colloidal CdSe/CdZnS QDs whose organic ligands were exchanged with halide ions to allow for close contact between the QDs and the perovskite matrix. Ensemble photoluminescence (PL) measurements demonstrate the retained emission of the QDs after incorporation into the MAPbBr3 matrix. Photoluminescence excitation (PLE) spectra exhibit signatures of wavelength-dependent coupling between the CdSe/CdZnS QDs and the MAPbBr3 matrix, i.e., a transfer of charges from matrix to QD, which increases the QD luminescence by up to 150%, or from QD to matrix. Spatially-resolved PL experiments reveal a strong correlation between the positions of QDs and an enhancement of the PL signal of the matrix. Lifetime imaging of the doped films furthermore shows that the emission lifetime of MAPbBr3 is slower in the vicinity of QDs, which, in combination with the increased PL signal of the matrix, suggests that QDs can act as local nucleation seeds that improve the crystallinity of MAPbBr3, thus boosting its emission quantum yield. Luminescence antibunching measurements provide clear evidence of single-photon emission from individual QDs in perovskite. Finally, the analysis of blinking statistics indicates an improvement of the photostability of individual QDs in perovskite as compared to bare CdSe/CdZnS QDs. At high CdSe/CdZnS QD doping levels, this work thus opens a route to hybrid solar concentrators for visible-light harvesting and hybrid-based LEDs, while a low degree of doping could yield hybrid single-photon sources than can be embedded in field-effect devices for single-charge control, which would allow the construction of nanophotonic devices via low-cost solution-processing techniques as an alternative to solid-state quantum dots.

Perspectives for CdSe/CdS spherical quantum wells as rapid-response nano-scintillators.

We explore the effect of the shell thickness on the time response of CdS/CdSe/CdS spherical quantum wells (SQWs) nanoscintillators under X-ray excitation. We first compare the spectral and timing properties under low and intense optical excitation, which allows us to identify the complex temporal and spectral response of the highly excited species. We find that a defect-induced delayed luminescence appears at large sizes. Under pulsed X-ray excitation, an analysis of the scintillation decay time reveals that multiexcitons are generated, similarly to the intense optical excitation and that the shell thickness does not change the fraction of fast component to a large extent. We performed a two-step simulation of the energy relaxation in the SQWs which reveals that large-size SQWs favor a very high number of excitations per particle, which, however, is counterbalanced by increased Auger quenching, rendering large SQWs less effective regarding the timing performance.

Optical properties of fully inorganic core/gradient-shell CdSe/CdZnS nanocrystals at the ensemble and single-nanocrystal levels.

We report the synthesis and optical characterization of fully inorganic gradient-shell CdSe/CdZnS nanocrystals (NCs) with high luminescence quantum yield (QY, 50%), which were obtained by replacing native oleic-acid (OA) ligands with halide ions (Cl-and Br-). Absorption, photoluminescence excitation (PLE) and photoluminescence (PL) spectra in solution were unaffected by the ligand-exchange procedure. The halide-capped NCs were stable in solution for several weeks without modification of their PL spectra; once deposited as unprotected thin films and exposed to air, however, they did show signs of aging which we attribute to increasing heterogeneity of (effective) NC size. Time-resolved PL measurements point to the existence of four distinct emissive states, which we attribute to neutral, singly-charged and multi-excitonic entities. We found that the relative contribution of these four components to the overall PL decay is modified by the OA-to-halide ligand exchange, while the excited-state lifetimes themselves, surprisingly, remain largely unaffected. The high PL quantum yield of the halide-capped NCs allowed observation of single particle blinking and photon-antibunching; one surprising result was that aging processes that occurs during the first few days after deposition on glass seemed to offer a certain increased protection against photobleaching. These results suggest that halide-capped CdSe/CdZnS NCs are promising candidates for incorporation into opto-electronic devices, based on, for example, hybrid perovskite matrices, which require eliminating the steric hindrance and electronic barrier of bulky organic ligands to ensure efficient coupling.

Nondestructive Encapsulation of CdSe/CdS Quantum Dots in an Inorganic Matrix by Pulsed Laser Deposition.

We report the successful encapsulation of colloidal quantum dots in an inorganic matrix by pulsed laser deposition. Our technique is nondestructive and thus permits the incorporation of CdSe/CdS core/shell colloidal quantum dots in an amorphous yttrium oxide matrix (Y2O3) under full preservation of the advantageous optical properties of the nanocrystals. We find that controlling the kinetic energy of the matrix precursors by means of the oxygen pressure in the deposition chamber facilitates the survival of the encapsulated species, whose well-conserved optical properties such as emission intensity, luminescence spectrum, fluorescence lifetime, and efficiency as single-photon emitters we document in detail. Our method can be extended to different types of nanoemitters (e.g., nanorods, dots-in-rods, nanoplatelets) as well as to other matrices (oxides, semiconductors, metals), opening up new vistas for the realization of fully inorganic multilayered active devices based on colloidal nano-objects.

Decoupling a hole spin qubit from the nuclear spins.

A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The main source of dephasing of an electron spin qubit in a GaAs-based system is the nuclear spin bath. A hole spin may circumvent the nuclear spin noise. In principle, the nuclear spins can be switched off for a pure heavy-hole spin. In practice, it is unknown to what extent this ideal limit can be achieved. A major hindrance is that p-type devices are often far too noisy. We investigate here a single hole spin in an InGaAs quantum dot embedded in a new generation of low-noise p-type device. We measure the hole Zeeman energy in a transverse magnetic field with 10 neV resolution by dark-state spectroscopy as we create a large transverse nuclear spin polarization. The hole hyperfine interaction is highly anisotropic: the transverse coupling is <1% of the longitudinal coupling. For unpolarized, randomly fluctuating nuclei, the ideal heavy-hole limit is achieved down to nanoelectronvolt energies; equivalently dephasing times up to a microsecond. The combination of large and strong optical dipole makes the single hole spin in a GaAs-based device an attractive quantum platform.

CdSe/ZnS quantum dots as sensors for the local refractive index.

We explore the potential of CdSe/ZnS colloidal quantum dots (QDs) as probes for their immediate dielectric environment, based on the influence of the local refractive index on the fluorescence dynamics of these nanoemitters. We first compare ensembles of quantum dots in homogeneous solutions with single quantum dots dispersed on various dielectric substrates, which allows us to test the viability of a conceptual framework based on a hard-sphere region-of-influence and the Bruggeman effective-medium approach. We find that all our measurements can be integrated into a coherent description, provided that the conceptualized point-dipole emitter is positioned at a distance from the substrate that corresponds to the geometry of the QD. Three theoretical models for the evolution of the fluorescence decay rate as a function of the local refractive index are compared, showing that the classical Lorentz approach (virtual cavity) is the most appropriate for describing the data. Finally, we use the observed sensitivity of the QDs to their environment to estimate the detection limit, expressed as the minimum number of traceable streptavidin molecules, of a potential QD-nanosensor based on fluorescence lifetime.

Transform-limited single photons from a single quantum dot.

Developing a quantum photonics network requires a source of very-high-fidelity single photons. An outstanding challenge is to produce a transform-limited single-photon emitter to guarantee that single photons emitted far apart in the time domain are truly indistinguishable. This is particularly difficult in the solid-state as the complex environment is the source of noise over a wide bandwidth. A quantum dot is a robust, fast, bright and narrow-linewidth emitter of single photons; layer-by-layer growth and subsequent nano-fabrication allow the electronic and photonic states to be engineered. This represents a set of features not shared by any other emitter but transform-limited linewidths have been elusive. Here, we report transform-limited linewidths measured on second timescales, primarily on the neutral exciton but also on the charged exciton close to saturation. The key feature is control of the nuclear spins, which dominate the exciton dephasing via the Overhauser field.

Autocorrelation analysis for the unbiased determination of power-law exponents in single-quantum-dot blinking.

We present an unbiased and robust analysis method for power-law blinking statistics in the photoluminescence of single nanoemitters, allowing us to extract both the bright- and dark-state power-law exponents from the emitters' intensity autocorrelation functions. As opposed to the widely used threshold method, our technique therefore does not require discriminating the emission levels of bright and dark states in the experimental intensity timetraces. We rely on the simultaneous recording of 450 emission timetraces of single CdSe/CdS core/shell quantum dots at a frame rate of 250 Hz with single photon sensitivity. Under these conditions, our approach can determine ON and OFF power-law exponents with a precision of 3% from a comparison to numerical simulations, even for shot-noise-dominated emission signals with an average intensity below 1 photon per frame and per quantum dot. These capabilities pave the way for the unbiased, threshold-free determination of blinking power-law exponents at the microsecond time scale.

High resolution coherent population trapping on a single hole spin in a semiconductor quantum dot.

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify the cause of this process as charge noise by, first, demonstrating that the hole spin g factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode.

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Midinfrared absorption measured at a lambda/400 resolution with an atomic force microscope.

Midinfrared absorption can be locally measured using a detection combining an atomic force microscope and a pulsed excitation. This is illustrated for the midinfrared bulk GaAs phonon absorption and for the midinfrared absorption of thin SiO(2) microdisks. We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption. The absorption spatial resolution achieved with microdisks is around 50 nanometer for an optical excitation around 22 micrometer wavelength.

Ultraweak-absorption microscopy of a single semiconductor quantum dot in the midinfrared range.

We show that we can measure the room temperature ultraweak absorption of a single buried semiconductor quantum dot. This is achieved by monitoring the deformation field induced by the absorption of midinfrared laser pulses and locally detected with an atomic force microscope tip. The absorption is spectrally and spatially resolved around lambda approximately 10 microm wavelength with 60 nm lateral resolution (lambda/150). The electronic S-D intersublevel absorption of a single quantum dot is identified around 120 meV and exhibits a homogeneous linewidth of approximately 10 meV at room temperature.