Studies on the substrate-dependent photocatalytic properties of Cu2O heterojunctions.

Cu2O is a promising material for photocatalysis because of its absorption ability in the ultraviolet (UV)-visible light range. Cu2O deposited on conductive Ti and fluorine-doped tin oxide (FTO) substrates behaves as a photocathode. Cu2O deposited on an n-type semiconductor such as TiO2 nanotube arrays (TNA)/Ti behaves as a photoanode and has demonstrated better photocatalytic activity than that of TNA/Ti. The substrate-dependent photocatalytic properties of Cu2O heterojunctions are not well studied. In this work, the photocatalytic properties of a Cu2O/TNA/Ti junction as a photoanode and of Cu2O/Ti and Cu2O/FTO junctions as photocathodes without bias were systematically studied to understand their performance. The Cu2O/TNA/Ti photoanode exhibited higher photocurrent spectral responses than those of Cu2O/Ti and Cu2O/FTO photocathodes. The photoanodic/photocathodic properties of those junctions were depicted in their energy band diagrams. Time-resolved photoluminescence indicated that Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO junctions did not enhance the separation of photogenerated charges. The improved photocatalytic properties of Cu2O/TNA/Ti compared with TNA/Ti were mainly attributed to the UV-visible light absorption of Cu2O.

Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface.

Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔHAg-Si, ΔHNi-Ag, and ΔHNi-Si, for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.