Enhanced Optical Response of SnS/SnS2 Layered Heterostructure.

The SnS/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS2 heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10-4 s. The power-dependent photoresponsivity investigates the mechanism of electron-hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS2 heterostructure has been increased to 7.31 × 10-3 A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS2 heterostructure. These results indicate an application potential of the layered SnS/SnS2 heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS2, and presents an approach for designing high-performance photodetection devices.

Modulation of the carrier balance of lead-halide perovskite nanocrystals by polyelectrolyte hole transport layers for near-infrared light-emitting diodes.

An alternative material, methylamine (MA)-doped poly[3-(4-carboxymethyl)thiophene-2,5-diyl] (P3CT) as hole transport layer (HTL) was investigated for efficient solution-processed near-infrared perovskite light-emitting diodes (NIR PeLEDs). The best NIR PeLEDs performance was achieved with an optimized composition ratio of the MA-doped P3CT (1:1) due to the balance of the electron and hole carrier in the active layer. The charge-balanced NIR PeLEDs exhibit the highest radiance of 858.37 W sr-1 m-2, a low turn-on voltage of 1.82 V, and an external quantum efficiency of 7.44%. Our findings show that using P3CT as an alternative HTL has the potential to significantly improve PeLED performance, allowing it to play a role in the development of practical applications in high-power NIR LEDs.

Temperature-Dependent Absorption of Ternary HfS2-xSex 2D Layered Semiconductors.

In this study, we present the investigation of optical properties on a series of HfS2-xSex crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20-300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS2-xSex were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.

Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry.

In this study, a series of SnS2-xSex (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical-vapor transport method. The crystal structural and material phase of SnS2-xSex layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS2-xSex compounds was measured in the temperature range of 20-300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS2-xSex were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.

Targeted next-generation sequencing identifies distinct clinicopathologic and molecular entities of intraductal papillary neoplasms of the bile duct.

Intraductal papillary neoplasm of the bile duct (IPNB) is a mass-forming neoplasm in the bile duct considered to be the biliary counterpart of pancreatic intraductal papillary mucinous neoplasm (IPMN). By its cell lineage, IPNB can be classified into gastric, intestinal, pancreatobiliary, and oncocytic types. Recently, a group of Japanese and Korean pathologists proposed that IPNB be classified into two types, with type 1, being the histological counterpart of IPMN and type 2, having a more complex histological architecture. We used targeted next-generation sequencing to study the molecular change of 37 IPNBs and identified frequent mutations of KRAS (49%), GNAS (32%), RNF43 (24%), APC (24%), TP53 (24%), and CTNNB1 (11%) in IPNBs. Intestinal-type IPNB was associated with KRAS, GNAS, and RNF43 mutations. Japan-Korea consensus type 1 was associated with KRAS and GNAS mutations. All four IPNBs with CTNNB1 mutations were of pancreatobiliary type and located in the extrahepatic bile duct. A hierarchical analysis identified three distinct groups within IPNB: group 1 was Japan-Korea consensus type 1 tumors with macroscopic mucin, old age, and frequent KRAS, GNAS, and RNF43 mutations. Group 2 was Japan-Korea consensus type 2 with intestinal differentiation and frequent KRAS mutation but rare GNAS mutation, MUC2 expression, and macroscopic mucin. Group 3 was characterized by CTNNB1 mutation, extrahepatic location, lack of expression of intestinal markers, Japan-Korea consensus type 2, and lack of mutations in KRAS, APC, RNF43, and GNAS. Our results indicated that IPNB is a heterogeneous disease and that the activation of Ras-mitogen-activated protein kinase (MAPK), Wnt/ß-catenin, and G-protein-coupled receptor (GPCR)-cAMP signaling is the main oncogenic mechanism of IPNB.

High Optical Response of Niobium-Doped WSe2-Layered Crystals.

The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals.

Preferential S/Se occupation in an anisotropic ReS2(1-x)Se2x monolayer alloy.

Band structure engineering of two-dimensional (2D) metal dichalcogenides (TMDs) is crucial for their light-matter interaction and optoelectronic applications. Alloying of different metal or chalcogen elements with different stoichiometries in TMDs provides a versatile and efficient approach for modulating the electronic structure and properties of 2D materials. In 2D alloys, quantification of spatial distribution and local coordination of atoms facilitates the establishment of the structure-property relationship at the atomic scale. Here, we have imaged and analyzed the atomic configuration of sulfur and selenium atoms in anisotropic ReS1.4Se0.6 by scanning transmission electron microscopy (STEM). In Z-contrast images, we have realized the identification and quantification of Re, Se and S at different coordination sites. Different from the random distribution of metal and chalcogen elements in MoS2(1-x)Se2x and Mo1-xWxS2, we find that Se atoms preferentially locate inside of Re4 diamonds in ReS2(1-x)Se2x. Further density function theory (DFT) calculations reveal electronic structure modulation for Se occupation at different sites.

Microinsertions in PRKACA cause activation of the protein kinase A pathway in cardiac myxoma.

Cardiac myxoma is the most common cardiac tumour. Most lesions occur sporadically, but occasional lesions develop in patients with Carney complex, a syndrome characterized by cardiac myxoma, spotty pigmentation, and endocrine overactivity. Two-thirds of patients with Carney complex harbour germline mutations in PRKAR1A, which encodes the type I regulatory subunit of protein kinase A (PKA). Most studies have not found a mutation in PRKAR1A in sporadic cardiac myxoma cases. Recent studies identified frequent mutations in PRKACA, which encodes the catalytic subunit of PKA, in cortisol-secreting adrenocortical adenoma cases. To determine whether the PRKACA mutation is involved in the tumourigenesis of cardiac myxoma, we performed Sanger sequencing of 41 specimens of sporadic cardiac myxoma to test for the presence of mutations in the coding regions and intron-exon boundaries of PRKACA. Mutations were identified in four cases (9.7%). In contrast to the point mutations identified in adrenocortical adenoma, all mutations were in-frame microinsertions of 18-33 bp clustered in exons 7 and 8. The mutated PRKACA proteins lost their ability to bind to PRKAR1A, and thereby lead to constitutive activation of the PKA pathway. Together with previous reports of PRKAR1A mutations in syndromic cardiac myxoma, our study demonstrates the importance of the PKA pathway in the tumourigenesis of cardiac myxoma. Copyright © 2017 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.

2D black phosphorus (BP) and rhenium dichalcogenides (ReX2 , X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX2 has low-symmetry distorted 1T structures with excellent stability. In ReX2 , the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS2 and ReSe2 . Photoluminescence emission energy of ReS2(1-x) Se2x monolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS2 -like peak at 212 cm-1 , shifts as the composition changes. Anisotropic electrical property is maintained in ReS2(1-x) Se2x with high electron mobility along b-axis for all compositions of ReS2(1-x) Se2x .

Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers.

2D transition metal dichalcogenide (TMD) alloys with tunable band gaps have recently gained wide interest due to their potential applications in future nanoelectronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) and Raman spectra of Mo1-x W x S2 monolayers with W composition x = 0, 0.29, 0.53, 0.66 and 1 in the temperature range 93-493 K. We observed a linear temperature dependence of PL emission energy and Raman frequency. The PL intensity is enhanced at high temperature (>393 K). The temperature coefficients are negative for both PL and Raman bands, which may result from anharmonicity, thermal expansion and composition disorder.

Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition.

Photoconductivities of monocrystalline vanadium pentoxide (V2O5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W-1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V2O5 NWs is two orders of magnitude higher than that of the V2O5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V2O5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO2, TiO2, and WO3.