RESUMO
In this study, we demonstrate the fabrication of a novel 2D transition metal dichalcogenide, VTe2, into a saturable absorber (SA) by using the liquid phase exfoliation method. Furthermore, the first-principles calculations were conducted to elucidate the electronic band structures and absorption spectrum. The nonlinear optical absorption properties of VTe2 at 1.0, 2.0, and 3.0 µm were measured using open-aperture Z-scan and P-scan methods, which showed saturation intensities and modulation depths of 95.57 GW/cm2 and 9.24%, 3.11 GW/cm2 and 7.26%, and 15.8 MW/cm2 and 17.1%, respectively. Furthermore, in the realm of practical implementation, the achievement of stable passively Q-switched (PQS) lasers employing SA composed of few-layered VTe2 nanosheets has manifested itself with broadband operating wavelengths from 1.0 to â¼3.0 µm. Specifically, PQS laser operations from near-infrared to mid-infrared with pulse durations of 195 and 563 ns for 1.0 and 2.0 µm solid-state lasers, respectively, and 749 ns for an Er3+-doped fluoride fiber laser at 3.0 µm were obtained. Our experimental results demonstrate that VTe2 is a potential broadband SA device for achieving PQS lasers. To the best of our knowledge, this is the first demonstration of using VTe2 as an SA in PQS lasers in the near- and mid-infrared regions, which highlights the potential of VTe2 for future research and applications in optoelectronic devices.
RESUMO
Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe2 monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational Eg mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe2-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.
RESUMO
We report on the application of a 1 µm solid-state passively Q-switched (PQS) laser and 1, 1.5 µm mode-locked (ML) fiber lasers based on ternary chalcogenide Ta2NiS5 saturable absorber (SA), which were successfully fabricated by liquid-phase exfoliation method (LPE). The nonlinear absorption of the Ta2NiS5-SA was characterized by 0.32 GW/cm2 and 0.25 GW/cm2 saturation intensities with 7.3% and 5.1% modulations depths at 1 µm and 1.5 µm, respectively. A PQS solid-state laser operating at 1.0 µm has been realized with the Ta2NiS5-SA. The maximum average output power, shortest pulse width, pulse energy, and pulse peak power from the PQS laser are 0.257 W, 180 ns, 1.265 µJ, and 7 W. Moreover, highly stable femtosecond laser centered at 1.5 µm, and picosecond centered at 1 µm, ML fiber lasers were obtained using the Ta2NiS5-SA. A 70 dB signal-to-noise ML laser with a pulse duration of 781 fs was observed in the telecommunication window, which is better than the duration of the previously reported lasers based on Ta2NiS5. The corresponding maximum single pulse energy and peak power are 0.977 nJ and 1251 W, respectively. The Ta2NiS5-SA fabricated by the LPE method was applied in near-infrared (NIR) ML fiber lasers (evanescent field interactions) and PQS bulk lasers. The results indicate that Ta2NiS5-SA prepared by the LPE method can be applied in a 1 µm bulk PQS laser and improved by the new combination mode (evanescent field interactions) for better output performance of the fiber laser.
RESUMO
Similar to most semiconductors, low-dimensional GaN materials also have the problem of asymmetric doping, that is, it is quite difficult to form p-type conductivity compared to n-type conductivity. Here, we have discussed the geometry, structure, and electronic defect properties of a two-dimensional graphene-like gallium nitride (g-GaN) monolayer belonging to the group III-V compounds, doped with different elements (In, Mg, Zn) at the Ga site. Based on first principles calculations, we found that substituting Ga (low concentration impurities) with Mg would be a better choice for fabricating a p-type doping semiconductor under N-rich conditions, which is essential for understanding the properties of impurity defects and intrinsic defects in the g-GaN monolayer (using the "transfer to real state" model). Moreover, the g-GaN monolayer is dynamically stable and can remain stable even in high-temperature conditions. This research provides insight for increasing the hole concentration and preparing potential high-performance optoelectronic devices using low-dimensional GaN materials.
RESUMO
In this work, we successfully fabricated a transmissive saturable absorber (SA) with Ti2CTx MXene using the spin-coating method. By inserting the Ti2CTx saturable absorber into the diode-pumped solid-state (DPSS) Nd:YAG laser, a stable passively Q-switched operation was obtained near 1.06 µm. At a pump power of 4.5 W, we obtained the shortest pulse duration of 163 ns with a repetition rate of 260 kHz. The corresponding single pulse energy and peak pulse power were 3.638 µJ and 22.3 W, respectively. The slope efficiency and the optical conversion efficiency of the laser were 21% and 25.5%, respectively. To the best of our knowledge, this is the first time that Ti2CTx was used in the passively Q-switched solid-state lasers. This work demonstrates that Ti2CTx can be a promising saturable absorber for solid-state laser pulse generation.
