Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion.

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

Structural and Optical Properties of Tungsten Disulfide Nanoscale Films Grown by Sulfurization from W and WO3.

Tungsten disulfide (WS2) was prepared from W metal and WO3 by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS2 was also prepared from W metal and sulfurized in a furnace at different temperatures (800, 850, 900, and 950 °C). X-ray diffraction revealed that WS2 has a 2-H crystal structure and the crystallinity improved with increasing sulfurization temperature, while the crystallinity of WS2 sulfurized from WO3 (WS2-WO3) is better than that sulfurized from W-metal (WS2-W). Raman spectra show that the full-width at half maximum (FWHM) of WS2-WO3 is narrower than that of WS2-W. We demonstrate that high-quality monocrystalline WS2 thin films can be prepared at wafer scale by sulfurization of WO3. The photoluminescence of the WS2 monolayer is strongly enhanced and centered at 1.98 eV. The transmittance of the WS2 monolayer exceeds 80%, and the measured band gap is 1.9 eV, as shown by ultraviolet-visible-infrared spectroscopy.