Oxygen-vacancy-dependent high-performanceα-Ga2O3nanorods photoelectrochemical deep UV photodetectors.

Ga2O3is a good candidate for deep ultraviolet photodetectors due to its wide-bandgap, good chemical, and thermal stability. Ga2O3-based photoelectrochemical (PEC) photodetectors attract increasing attention due to the simple fabrication and self-powered capability, but the corresponding photoresponse is still inferior. In this paper, the oxygen vacancy (Vo) engineering towardsα-Ga2O3was proposed to obtain high-performance PEC photodetectors. Theα-Ga2O3nanorods were synthesized by a simple hydrothermal method with an annealing process. The final samples were named as Ga2O3-400, Ga2O3-500, and Ga2O3-600 for annealing at 400 ℃, 500 ℃, and 600 ℃, respectively. Different annealing temperatures lead to different Voconcentrations in theα-Ga2O3nanorods. The responsivity is 101.5 mA W-1for Ga2O3-400 nanorod film-based PEC photodetectors under 254 nm illumination, which is 1.4 and 4.0 times higher than those of Ga2O3-500 and Ga2O3-600 nanorod film-based PEC photodetectors, respectively. The photoresponse ofα-Ga2O3nanorod film-based PEC photodetectors strongly depends on the Voconcentration and high Voconcentration accelerates the interfacial carrier transfer of Ga2O3-400, enhancing the photoresponse of Ga2O3-400 nanorod film-based PEC photodetectors. Furthermore, theα-Ga2O3nanorod film-based PEC photodetectors have good multicycle, long-term stability, and repeatability. Our result shows thatα-Ga2O3nanorods have promising applications in deep UV photodetectors.

Efficient Doping Induced by Charge Transfer at the Hetero-Interface to Enhance Photocatalytic Performance.

The construction of heterojunction photocatalysts is an effective method to improve photocatalytic efficiency since the potential gradient and built-in electron field established at the junction could enhance the efficiency of charge separation and interfacial charge transfer. Nevertheless, heterojunction photocatalysts with strong built-in electron fields remain difficult to build since the two adjacent constitutes must be satisfied with an appropriate band alignment, redox potential, and carrier concentration gradient. Here, an efficient charge transfer-induced doping strategy is proposed to enhance the heterojunction built-in electron field for stable and efficient photocatalytic performance. Carrier transfer tests show that the rectification ratio of the n-TiO2-X/n-BiOI heterojunction is significantly enhanced after being coated with graphene oxide (GO). Consequently, both the hydrogen production and photodegradation performance of the GO composite heterojunction are considerably enhanced compared with pure TiO2-X, BiOI, and n-TiO2-X/n-BiOI. This work provides a facile method to prepare heterojunction photocatalysts with a high catalytic activity.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors.

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.

Enhancement in Electrical and Thermal Properties of LDPE with Al2O3 and h-BN as Nanofiller.

Low-density polyethylene (LDPE) has excellent dielectric properties and is extensively used in electrical equipment. Hexagonal boron nitride (h-BN) is similar to a graphite-layered structure, and alumina fiber (Al2O3) has high-temperature resistance and a strong performance. Herein, we prepared Al2O3-h-BN/LDPE nanocomposites by using LDPE as the matrix material and h-BN and Al2O3 as the fillers. The influence of different doping contents and the mass ratio of Al2O3 and h-BN (1:1) to LDPE on the electrical properties and thermal conductivity of the nanocomposites was examined. The results showed that the suppression effect on space charge was the most obvious and average. The charge density was the lowest and had the minimum decay rate when the doping content was 2%. The breakdown strength of the film reached the maximum value of 340.1 kV/mm, which was 12.3% higher than that of the pure LDPE (302.8 kV/mm). The thermal diffusivity of the composite sample was also higher than that of the single h-BN-doped sample when the content of h-BN and Al2O3 was 7%. The thermal conductivity was 59.3% higher than that of the pure LDPE sample and 20% higher than that of h-BN/LDPE.

High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor with excellent electrical transport properties, high photoresponse, and good air stability. However, the research on 2D Bi2O2S is limited. In this work, ultrathin Bi2O2S nanosheets are synthesized by a facile and eco-friendly chemical synthesis method at room temperature. The thickness and lateral sizes are 2-4 nm and 20-40 nm, respectively. The 2D ultrathin Bi2O2S nanosheets have a broad absorption spectrum from ultraviolet (UV) to near-infrared (NIR). Photoelectrochemical (PEC) photodetectors based on 2D Bi2O2S nanosheets are fabricated by a simple drop-casting method. The 2D Bi2O2S-based PEC photodetectors show excellent photodetection performance with a broad photoresponse spectrum from 365 to 850 nm, a high responsivity of 13.0 mA/W, ultrafast response times of 10/45 ms, and good long-term stability at a bias voltage of 0.6 V, which are superior to most 2D material-based PEC photodetectors. Further, the 2D Bi2O2S PEC photodetector can function as a high-performance self-powered broadband photodetector. Moreover, the photoresponse performance can be effectively tuned by the concentration and the kind of electrolyte. Our results demonstrate that 2D Bi2O2S nanosheets hold great promise for application in high-performance optoelectronic devices.

Erratum: Wang, D., et al. Self-Assembly Synthesis of the MoS2/PtCo Alloy Counter Electrodes for High-Efficiency and Stable Low-Cost Dye-Sensitized Solar Cells. Nanomaterials 2020, 10, 1725.

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Enhanced Thermal Conductivity and Dielectric Properties of h-BN/LDPE Composites.

Low-density polyethylene (LDPE), as an excellent dielectric insulating material, is widely used in electrical equipment insulation, whereas its low thermal conductivity limits its further development and application. Hexagonal boron nitride (h-BN) filler was introduced into LDPE to tailor the properties of LDPE to make it more suitable for high-voltage direct current (HVDC) cable insulation application. We employed melt blending to prepare h-BN/LDPE thermally conductive composite insulation materials with different contents. We focused on investigating the micromorphology and structure, thermal properties, and electrical properties of h-BN/LDPE composites, and explained the space charge characteristics. The scanning electron microscope (SEM) results indicate that the h-BN filler has good dispersibility in the LDPE at a low loading (less than 3 phr (3 g of micron h-BN particles filled in 100g of LDPE)), as well as no heterogeneous phase formation. The results of thermal conductivity analysis show that the introduction of h-BN filler can significantly improve the thermal conductivity of composites. The thermal conductivity of the composite samples with 10 phr h-BN particles is as high as 0.51 W/(m·K), which is 57% higher than that of pure LDPE. The electrical performance illustrates that h-BN filler doping can significantly inhibit space charge injection and reduce space charge accumulation in LDPE. The interface effect between h-BN and the substrate reduces the carrier mobility, thereby suppressing the injection of charges of the same polarity and increasing the direct-current (DC) breakdown strength. h-BN/LDPE composite doped with 3 phr h-BN particles has excellent space charge suppression effect and high DC breakdown strength, which is 14.3% higher than that of pure LDPE.

Self-Assembly Synthesis of the MoS2/PtCo Alloy Counter Electrodes for High-Efficiency and Stable Low-Cost Dye-Sensitized Solar Cells.

In this work, MoS2 microspheres/PtCo-alloy nanoparticles (MoS2/PtCo-alloy NPs) were composited via a novel and facile process which MoS2 is functionalized by poly (N-vinyl-2-pyrrolidone) (PVP) and self-assembled with PtCo-alloy NPs. This new composite shows excellent electrocatalytic activity and great potential for dye-sensitized solar cells (DSSCs) as a counter electrode (CE) material. Benefiting from heterostructure and synergistic effects, the MoS2/PtCo-alloy NPs exhibit high electrocatalytic activity, low charge-transfer resistance and stability in the cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) test. Meanwhile, a high power-conversion efficiency (PCE) of 8.46% is achieved in DSSCs with MoS2/PtCo-alloy NP CEs, which are comparable to traditional Pt CEs (8.45%). This novel composite provides a new high-performance, stable and cheap choice for CEs in DSSCs.

Applicability of the low-dissipation model: Carnot-like heat engines under Newton's law of cooling.

We investigate the validity of using the low-dissipation model (LD model) to describe the maximum power regime of the endoreversible model under Newton's law of cooling. We find it valid only when the temperature difference of heat reservoirs (T_{h}-T_{c}, T_{h}>T_{c}) is small. Thus the efficiency at maximum power derived from the LD model is valid to the first order of Carnot efficiency when describing endoreversible heat engines. We conclude that the LD model produces the Curzon-Ahlborn efficiency (η_{CA}=1-sqrt[T_{h}/T_{c}]) in the maximum power regime with no dependence on dissipation ratios.

Ultrawide range tuning of direct band gap in MgZnO monolayer via electric field effect.

Two-dimensional (2D) materials are building blocks for the next generation of electronic and optoelectronic devices. Tuning band gap in 2D materials over a broad range from ultraviolet to infrared is of scientific and technological importance for a wide range of applications, but its execution remains a challenge. Herein, tuning the band gap from 5.27 eV to 0.69 eV has been realized by utilizing an external electric field. Interestingly, under external electric field the MgZnO monolayer remains a direct band gap semiconductor, which has clear advantage for applications in optical devices. Moreover, the external electric field significantly leads to a red shift of the optical absorption peaks. The absorption coefficients and reflectivity decrease with increase in the external electric field in MgZnO monolayer. These findings should render these materials suitable for future applications in electronic and optoelectronic devices.

Al-Doped ZnO Monolayer as a Promising Transparent Electrode Material: A First-Principles Study.

Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.

Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes.

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles calculation in combination with the Boltzmann transport theory. When the doping concentration of Al, Ga, and In is less than 12.5 wt %, we find that the average transmittance reaches up to 99% in the visible and UV regions. Moreover, the electrical conductivity is enhanced for the Al, Ga, and In doped systems compared to that of the pristine ZnO monolayer. In particular, a good electrical conductivity with a significant improvement for the In doped ZnO monolayer is achieved compared to Al and Ga doping at the 6.25 wt % level. These results suggest that the ZnO monolayer based materials, and in particular the In doped ZnO monolayer, are promising transparent anodes for nanoscale electronic and optoelectronic applications.

Ultralong Rutile TiO2 Nanowire Arrays for Highly Efficient Dye-Sensitized Solar Cells.

Vertically aligned rutile TiO2 nanowire arrays (NWAs) with lengths of ∼44 µm have been successfully synthesized on transparent, conductive fluorine-doped tin oxide (FTO) glass by a facile one-step solvothermal method. The length and wire-to-wire distance of NWAs can be controlled by adjusting the ethanol content in the reaction solution. By employing optimized rutile TiO2 NWAs for dye-sensitized solar cells (DSCs), a remarkable power conversion efficiency (PCE) of 8.9% is achieved. Moreover, in combination with a light-scattering layer, the performance of a rutile TiO2 NWAs based DSC can be further enhanced, reaching an impressive PCE of 9.6%, which is the highest efficiency for rutile TiO2 NWA based DSCs so far.

First-Principles Investigation of Phase Stability, Electronic Structure and Optical Properties of MgZnO Monolayer.

MgZnO bulk has attracted much attention as candidates for application in optoelectronic devices in the blue and ultraviolet region. However, there has been no reported study regarding two-dimensional MgZnO monolayer in spite of its unique properties due to quantum confinement effect. Here, using density functional theory calculations, we investigated the phase stability, electronic structure and optical properties of MgxZn1-xO monolayer with Mg concentration x range from 0 to 1. Our calculations show that MgZnO monolayer remains the graphene-like structure with various Mg concentrations. The phase segregation occurring in bulk systems has not been observed in the monolayer due to size effect, which is advantageous for application. Moreover, MgZnO monolayer exhibits interesting tuning of electronic structure and optical properties with Mg concentration. The band gap increases with increasing Mg concentration. More interestingly, a direct to indirect band gap transition is observed for MgZnO monolayer when Mg concentration is higher than 75 at %. We also predict that Mg doping leads to a blue shift of the optical absorption peaks. Our results may provide guidance for designing the growth process and potential application of MgZnO monolayer.