Weld-free mounting of lamellae for electrical biasing operando TEM.

Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials and devices. The ability to perform electrical testing while simultaneously capturing the wide spectrum of signals detectable in a TEM, including structural, chemical, and even electronic contrast, represents a significant milestone in the realm of nanoelectronics. In situ studies hold particular promise for the development of Metal-Insulator-Metal (MIM) devices for use in next-generation computing. However, achieving successful device operation in the TEM typically necessitates meticulous sample preparation involving focused ion beam (FIB) systems. Conducting contamination introduced during the FIB thinning process and subsequent attachment of the sample onto a MEMS-based chip remains a formidable challenge. This article delineates an improved FIB-based sample preparation methodology that results in good electrical connectivity and operational functionality across various MIM devices. To exemplify the efficacy of the sample preparation technique, we demonstrate preparation of a clean cross section extracted from a Au/Pt/BaSrTiO3/SrMoO3 tunable capacitor (varactor). The FIB-prepared TEM lamella mounted on a MEMS-based chip showed current levels in the tens of picoamperes range at 0.1 V. Furthermore, the electric response and current density of the TEM lamella device closely align with macro-scale devices. These samples exhibit comparable current densities to their macro-sized counterparts thus validating the sample preparation process and confirming device connectivity. The simultaneous operation and TEM characterization of electronic devices enabled by this process enables direct correlation between device structure and function, which could prove pivotal in the development of new MIM systems.

InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications.

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.

Visualizing the Electron Wind Force in the Elastic Regime.

With continued scaling toward higher component densities, integrated circuits (ICs) contain ever greater lengths of nanowire that are vulnerable to failure via electromigration. Previously, plastic electromigration driven by the "electron wind" has been observed, but not the elastic response to the wind force itself. Here we describe mapping, via electron energy-loss spectroscopy, the density of a lithographically defined aluminum nanowire with sufficient precision to determine both its temperature and its internal pressure. An electrical current density of 108 A/cm2 produces Joule heating, tension upwind, and compression downwind. Surprisingly, the pressure returns to its ambient value well inside the wire, where the current density is still high. This spatial discrepancy points to physics that are not captured by a classical "wind force" model and to new opportunities for optimizing electromigration-resistant IC design.

Differential electron yield imaging with STXM.

Total electron yield (TEY) imaging is an established scanning transmission X-ray microscopy (STXM) technique that gives varying contrast based on a sample's geometry, elemental composition, and electrical conductivity. However, the TEY-STXM signal is determined solely by the electrons that the beam ejects from the sample. A related technique, X-ray beam-induced current (XBIC) imaging, is sensitive to electrons and holes independently, but requires electric fields in the sample. Here we report that multi-electrode devices can be wired to produce differential electron yield (DEY) contrast, which is also independently sensitive to electrons and holes, but does not require an electric field. Depending on whether the region illuminated by the focused STXM beam is better connected to one electrode or another, the DEY-STXM contrast changes sign. DEY-STXM images thus provide a vivid map of a device's connectivity landscape, which can be key to understanding device function and failure. To demonstrate an application in the area of failure analysis, we image a 100 nm, lithographically-defined aluminum nanowire that has failed after being stressed with a large current density.

Electron-Transparent Thermoelectric Coolers Demonstrated with Nanoparticle and Condensation Thermometry.

More efficient thermoelectric devices would revolutionize refrigeration and energy production, and low-dimensional thermoelectric materials are predicted to be more efficient than their bulk counterparts. But nanoscale thermoelectric devices generate thermal gradients on length scales that are too small to resolve with traditional thermometry methods. Here we fabricate, using single-crystal bismuth telluride (Bi2Te3) and antimony/bismuth telluride (Sb2-xBixTe3) flakes exfoliated from commercially available bulk materials, functional thermoelectric coolers (TECs) that are only 100 nm thick. These devices are the smallest TECs ever demonstrated by a factor of 104. After depositing indium nanoparticles to serve as nanothermometers, we measure the heating and cooling produced by the devices with plasmon energy expansion thermometry (PEET), a high-spatial-resolution, transmission electron microscopy (TEM)-based thermometry technique, demonstrating a ΔT = -21 ± 4 K from room temperature. We also establish proof-of-concept for condensation thermometry, a quantitative temperature-change mapping technique with a spatial precision of ≲300 nm.

Irreversibility at macromolecular scales in the flake graphite of the lithium-ion battery anode.

Charging a commercial lithium-ion battery intercalates lithium into the graphite-based anode, creating various lithium carbide structures. Despite their economic importance, these structures and the dynamics of their charging-discharging transitions are not well-understood. We have videoed single microcrystals of high-quality, natural graphite undergoing multiple lithiation-delithiation cycles. Because the equilibrium lithium-carbide compounds corresponding to full, half, and one-third charge are gold, red, and blue respectively, video observations give direct insight into both the macromolecular structures and the kinematics of charging and discharging. We find that the transport during the first lithiation is slow and orderly, and follows the core-shell or shrinking annuli model with phase boundaries moving at constant velocities (i.e. non-diffusively). Subsequent lithiations are markedly different, showing transport that is both faster and disorderly, which indicates that the initially pristine graphite is irreversibly and considerably altered during the first cycle. In all cases deintercalation is not the time-reverse of intercalation. These findings both illustrate how lithium enters nearly defect-free host material, and highlight the differences between the idealized case and an actual, cycling graphite anode.

Electron beam-induced current imaging with two-angstrom resolution.

An electron microscope's primary beam simultaneously ejects secondary electrons (SEs) from the sample and generates electron beam-induced currents (EBICs) in the sample. Both signals can be captured and digitized to produce images. The off-sample Everhart-Thornley detectors that are common in scanning electron microscopes (SEMs) can detect SEs with low noise and high bandwidth. However, the transimpedance amplifiers appropriate for detecting EBICs do not have such good performance, which makes accessing the benefits of EBIC imaging at high-resolution relatively more challenging. Here we report lattice-resolution imaging via detection of the EBIC produced by SE emission (SEEBIC). We use an aberration-corrected scanning transmission electron microscope (STEM), and image both microfabricated devices and standard calibration grids.

Organometallic Complexes Anchored to Conductive Carbon for Electrocatalytic Oxidation of Methane at Low Temperature.

Low-temperature direct methane fuel cells (DMEFCs) offer the opportunity to substantially improve the efficiency of energy production from natural gas. This study focuses on the development of well-defined platinum organometallic complexes covalently anchored to ordered mesoporous carbon (OMC) for electrochemical oxidation of methane in a proton exchange membrane fuel cell at 80 °C. A maximum normalized power of 403 µW/mg Pt was obtained, which was 5 times higher than the power obtained from a modern commercial catalyst and 2 orders of magnitude greater than that from a Pt black catalyst. The observed differences in catalytic activities for oxidation of methane are linked to the chemistry of the tethered catalysts, determined by X-ray photoelectron spectroscopy. The chemistry/activity relationships demonstrate a tangible path for the design of electrocatalytic systems for C-H bond activation that afford superior performance in DMEFC for potential commercial applications.

Imaging interfacial electrical transport in graphene-MoS2 heterostructures with electron-beam-induced-currents.

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS2 heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching.

Conductive bridge random access memory (CBRAM) is a leading candidate to supersede flash memory, but poor understanding of its switching process impedes widespread implementation. The underlying physics and basic, unresolved issues such as the connecting filament's growth direction can be revealed with direct imaging, but the nanoscale target region is completely encased and thus difficult to access with real-time, high-resolution probes. In Pt/Al2O3/Cu CBRAM devices with a realistic topology, we find that the filament grows backward toward the source metal electrode. This observation, consistent over many cycles in different devices, corroborates the standard electrochemical metallization model of CBRAM operation. Time-resolved scanning transmission electron microscopy (STEM) reveals distinct nucleation-limited and potential-limited no-growth periods occurring before and after a connection is made, respectively. The subfemtoampere ionic currents visualized move some thousands of atoms during a switch and lag the nanoampere electronic currents.

Thermal measurement. Nanoscale temperature mapping in operating microelectronic devices.

Modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit's glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope and electron energy loss spectroscopy, we quantified the local density via the energy of aluminum's bulk plasmon. Rescaling density to temperature yields maps with a statistical precision of 3 kelvin/hertz(-1/2), an accuracy of 10%, and nanometer-scale resolution. Many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.

Dark-field transmission electron microscopy and the Debye-Waller factor of graphene.

Graphene's structure bears on both the material's electronic properties and fundamental questions about long range order in two-dimensional crystals. We present an analytic calculation of selected area electron diffraction from multi-layer graphene and compare it with data from samples prepared by chemical vapor deposition and mechanical exfoliation. A single layer scatters only 0.5% of the incident electrons, so this kinematical calculation can be considered reliable for five or fewer layers. Dark-field transmission electron micrographs of multi-layer graphene illustrate how knowledge of the diffraction peak intensities can be applied for rapid mapping of thickness, stacking, and grain boundaries. The diffraction peak intensities also depend on the mean-square displacement of atoms from their ideal lattice locations, which is parameterized by a Debye-Waller factor. We measure the Debye-Waller factor of a suspended monolayer of exfoliated graphene and find a result consistent with an estimate based on the Debye model. For laboratory-scale graphene samples, finite size effects are sufficient to stabilize the graphene lattice against melting, indicating that ripples in the third dimension are not necessary.

In situ transmission electron microscopy of lead dendrites and lead ions in aqueous solution.

An ideal technique for observing nanoscale assembly would provide atomic-resolution images of both the products and the reactants in real time. Using a transmission electron microscope we image in situ the electrochemical deposition of lead from an aqueous solution of lead(II) nitrate. Both the lead deposits and the local Pb(2+) concentration can be visualized. Depending on the rate of potential change and the potential history, lead deposits on the cathode in a structurally compact layer or in dendrites. In both cases the deposits can be removed and the process repeated. Asperities that persist through many plating and stripping cycles consistently nucleate larger dendrites. Quantitative digital image analysis reveals excellent correlation between changes in the Pb(2+) concentration, the rate of lead deposition, and the current passed by the electrochemical cell. Real-time electron microscopy of dendritic growth dynamics and the associated local ionic concentrations can provide new insight into the functional electrochemistry of batteries and related energy storage technologies.