Violin Varnishes: Microstructure and Nanomechanical Analysis.

The aim of the current work is twofold: to demonstrate the application of in situ non-invasive imaging by portable atomic force microscopy (AFM) on the surfaces of a violin and to integrate compositional and mechanical analysis at the nano scale level on model samples of varnished wood. These samples were prepared according to traditional recipes by an Italian lute-maker family well practised in the art. Samples of oil and spirit-based varnishes on maple wood, naturally and accelerated light aged, were studied. AFM was used to measure the nanomechanical properties of the model samples and established that the spirit-based varnish was stiffer than the oil-based. Synchrotron radiation micro- Fourier Transform Infra-red analysis of the layer structure revealed that stiffer spirit-based varnish showed less penetration into the wood than the oil-based. Further PeakForce Quantitative Nanomechanical Mapping (QNM) demonstrated a difference in adhesion values between the oil- and spirit-based samples.

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.

Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such behavior, and one example of several classes of plasticity that are being examined with the aim of finding suitable algorithms for application in many computing tasks such as coincidence detection, classification and image recognition. In previous work we have demonstrated that the neuromorphic capabilities of silicon-rich silicon oxide (SiOx) resistance switching devices extend beyond plasticity to include thresholding, spiking, and integration. We previously demonstrated such behaviors in devices operated in the unipolar mode, opening up the question of whether we could add plasticity to the list of features exhibited by our devices. Here we demonstrate clear STDP in unipolar devices. Significantly, we show that the response of our devices is broadly similar to that of biological synapses. This work further reinforces the potential of simple two-terminal RRAM devices to mimic neuronal functionality in hardware spiking neural networks.

Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.

Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM.

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.

Electrically tailored resistance switching in silicon oxide.

Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films. Our devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. We demonstrate different operational modes that make it possible to dynamically adjust device properties, in particular two highly desirable properties: nonlinearity and self-rectification. This can potentially enable high levels of device integration in passive crossbar arrays without causing the problem of leakage currents in common line semi-selected devices. Aspects of conduction and switching mechanisms are discussed, and scanning tunnelling microscopy (STM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments.