RESUMO
Enhanced surveillance of influenza requires rapid, robust, and inexpensive analytical techniques capable of providing a detailed analysis of influenza virus strains. Functionalized poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) was demonstrated to achieve specific and ultrasensitive (at fM level) detection of high pathogenic strain virus (H5 and H7) DNA of avian influenza (AI) which is an important infectious disease and has an immediate need for surveillance. The poly-SiNW FET was prepared by a simple and low-cost method that is compatible with current commercial semiconductor process without expensive E-beam lithography tools for large-scale production. Specific electric changes were observed for AI virus DNA sensing when nanowire surface of poly-SiNW FET was modified with complementary captured DNA probe and target DNA (H5) at fM to pM range could be distinguished. With its excellent electric properties and potential for mass commercial production, poly-SiNW FET can be developed to become a portable biosensor for field use and point-of-care diagnoses.
Assuntos
Alphainfluenzavirus/isolamento & purificação , Técnicas Biossensoriais/instrumentação , DNA Viral/análise , Animais , Sequência de Bases , Técnicas Biossensoriais/métodos , Técnicas Biossensoriais/estatística & dados numéricos , Aves , Sondas de DNA/genética , DNA Viral/genética , Técnicas Eletroquímicas , Humanos , Influenza Aviária/diagnóstico , Alphainfluenzavirus/genética , Alphainfluenzavirus/patogenicidade , Nanofios , Vigilância da População/métodos , Sensibilidade e Especificidade , Silício , Transistores EletrônicosRESUMO
A simple and low-cost method to fabricate poly-silicon nanowire field effect transistor (poly-Si NW FET) for biosensing application was demonstrated. The poly-silicon nanowire (poly-Si NW) channel was fabricated by employing the poly-silicon (poly-Si) sidewall spacer technique, which approach was comparable with current commercial semiconductor process and forsaken expensive E-beam lithography tools. The electronic properties of the poly-Si NW FET in aqueous solution were found to be similar to those of single-crystal silicon nanowire field effect transistors reported in the literature. A model biotin and avidin/streptavidin sensing system was used to demonstrate the biosensing capacity of poly-Si NW FET. The changes of I(D)-V(G) curves were consistent with an n-type FET affected by a nearby negatively (streptavidin) and positively (avidin) charged molecules, respectively. Specific electric changes were observed for streptavidin and avidin sensing when nanowire surface of poly-Si NW FET was modified with biotin and streptavidin at sub pM to nM range could be distinguished. With its excellent electric properties and the potential for mass commercial production, poly-Si NW FET can be a very useful transducer for a variety of biosensing applications.
Assuntos
Técnicas Biossensoriais/instrumentação , Eletroquímica/instrumentação , Nanotecnologia/instrumentação , Nanotubos/química , Silício/química , Transistores Eletrônicos , Técnicas Biossensoriais/métodos , Desenho de Equipamento , Análise de Falha de Equipamento , Nanotecnologia/métodos , Nanotubos/ultraestrutura , Reprodutibilidade dos Testes , Sensibilidade e EspecificidadeRESUMO
An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.