Tunneling Spectroscopy of Two-Dimensional Materials Based on Via Contacts.

We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely, metallic contacts embedded into through-holes in hexagonal boron nitride (hBN). We use the via-based tunneling method to study the single-particle density of states of two different two-dimensional (2D) materials, NbSe2 and graphene. In NbSe2 devices, we characterize the barrier strength and interface disorder for barrier thicknesses of 0, 1, and 2 layers of hBN and study the dependence on the tunnel-contact area down to (44 ± 14)2 nm2. For 0-layer hBN devices, we demonstrate a crossover from diffusive to point contacts in the small-contact-area limit. In graphene, we show that reducing the tunnel barrier thickness and area can suppress effects due to phonon-assisted tunneling and defects in the hBN barrier. This via-based architecture overcomes limitations of other planar tunneling designs and produces high-quality, ultraclean tunneling structures from a variety of 2D materials.

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe2.

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe2. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe2. At the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe2 bilayers via the twist angle as well as interlayer interactions.

Direct measurement of ferroelectric polarization in a tunable semimetal.

Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe2, a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables measurement of the spontaneous polarization as free carriers are added to the system. Here we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe2 to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe2 is thus shown to be a fully tunable ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory.

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe2 channel or an h-BN capping layer to achieve "1" or "0", respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ∼1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ∼2.5 × 1012 cm-2, and an On/Off ratio exceeding 104 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). When the write time approaches 1 ms, the On/Off ratio remains >102, showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

Electron Transport in Multidimensional Fuzzy Graphene Nanostructures.

Atomically thin two-dimensional (2D) materials offer a range of superlative electronic and electrochemical properties that facilitate applications in sensing, energy conversion, and storage. Graphene, a 2D allotrope of carbon, has exceptional surface area per unit mass and highly catalytic edges. To leverage these properties, efforts have been made to synthesize complex three-dimensional (3D) geometries of graphene, with an eye toward integration into functional electronic devices. However, the electronic transport properties of such complex 3D structures are not well understood at a microscopic level. Here, we report electron transport in a 3D arrangement of free-standing 2D graphene flakes along an isolated one-dimensional Si nanowire. We show that transport through the free-standing graphene network is dominated by variable-range hopping and leads to negative magnetoresistance, from cryogenic conditions up to room temperature. Our findings lay the foundation for studying transport mechanisms in 2D material-based multidimensional nanostructures.

Tuning Ising superconductivity with layer and spin-orbit coupling in two-dimensional transition-metal dichalcogenides.

Systems simultaneously exhibiting superconductivity and spin-orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, yielding an antisymmetric form of spin-orbit coupling that admits both spin-singlet and spin-triplet components of the superconducting wavefunction. Here, we present an experimental and theoretical study of two intrinsic TMD superconductors with large spin-orbit coupling in the atomic layer limit, metallic 2H-TaS2 and 2H-NbSe2. We investigate the superconducting properties as the material is reduced to monolayer thickness and show that high-field measurements point to the largest upper critical field thus reported for an intrinsic TMD superconductor. In few-layer samples, we find the enhancement of the upper critical field is sustained by the dominance of spin-orbit coupling over weak interlayer coupling, providing additional candidate systems for supporting unconventional superconducting states in two dimensions.

Nanowire-Mesh-Templated Growth of Out-of-Plane Three-Dimensional Fuzzy Graphene.

Graphene, a honeycomb sp2 hybridized carbon lattice, is a promising building block for hybrid-nanomaterials due to its electrical, mechanical, and optical properties. Graphene can be readily obtained through mechanical exfoliation, solution-based deposition of reduced graphene oxide (rGO), and chemical vapor deposition (CVD). The resulting graphene films' topology is two-dimensional (2D) surface. Recently, synthesis of three-dimensional (3D) graphitic networks supported or templated by nanoparticles, foams, and hydrogels was reported. However, the resulting graphene films lay flat on the surface, exposing 2D surface topology. Out-of-plane grown carbon nanostructures, such as vertically aligned graphene sheets (VAGS) and vertical carbon nanowalls (CNWs), are still tethered to 2D surface. 3D morphology of out-of-plane growth of graphene hybrid-nanomaterials which leverages graphene's outstanding surface-to-volume ratio has not been achieved to date. Here we demonstrate highly controlled synthesis of 3D out-of-plane single- to few-layer fuzzy graphene (3DFG) on a Si nanowire (SiNW) mesh template. By varying graphene growth conditions (CH4 partial pressure and process time), we control the size, density, and electrical properties of the NW templated 3DFG (NT-3DFG). 3DFG growth can be described by a diffusion-limited-aggregation (DLA) model. The porous NT-3DFG meshes exhibited high electrical conductivity of ca. 2350 S m-1. NT-3DFG demonstrated exceptional electrochemical functionality, with calculated specific electrochemical surface area as high as ca. 1017 m2 g-1 for a ca. 7 µm thick mesh. This flexible synthesis will inspire formation of complex hybrid-nanomaterials with tailored optical and electrical properties to be used in future applications such as sensing, and energy conversion and storage.

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer.

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.